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400results about How to "Improve the scattering effect" patented technology

Packaging process of flexible semiconductor film electronic device

The invention discloses a packaging process of a flexible semiconductor film electronic device. The packaging process comprises a water and oxygen blocking layer preparation working procedure, wherein a water and oxygen blocking layer is formed by one or more water and oxygen blocking units in a stacking mode, each water and oxygen blocking unit comprises an organic blocking layer and an inorganic blocking layer, an uneven morphology structure is arranged on the surface of each organic blocking layer, and each inorganic blocking layer is arranged on the upper surface of the corresponding organic blocking layer. The uneven morphology structure on the surface of an organic film is a regular pattern or an irregular pattern. The uneven morphology structure on the surface of each organic blocking layer is formed in a photoetching mode or physical embossing mode or through particle addition. The uneven morphology structure of the surface of each organic blocking layer is of a rectangular structure or zigzag structure or arc structure. The flexible semiconductor film electronic device is simple in manufacturing process and high in water and oxygen blocking performance, and the device can be kept to be thin while the good water and oxygen isolation performance of the device can be achieved.
Owner:GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH

Polymer dispersed liquid crystal electro-optical device and method for manufacturing the same

PCT No. PCT/JP96/03303 Sec. 371 Date Jul. 9, 1997 Sec. 102(e) Date Jul. 9, 1997 PCT Filed Nov. 11, 1996 PCT Pub. No. WO97/17630 PCT Pub. Date May 15, 1997A polymer dispersed liquid crystal electro-optical device comprising a liquid crystal polymer complex layer having a liquid crystal and a polymer, wherein said liquid crystal and said polymer are aligned in the same direction when no electric field is applied, and an electrode structure formed on each side of said liquid crystal polymer complex layer for applying an electric field to said liquid crystal polymer complex layer to align said liquid crystal along the electric field so as to render said liquid crystal polymer complex layer in a light-scattering state. The liquid crystal polymer complex layer is formed by dissolving a liquid crystal and a polymer precursor to form a solution; adding a compound in which at least one hydrogen atom in a benzene ring is substituted by a hydroxy group or a compound having a benzene ring with a hydroxy group as a basic skeleton to said solution; polymerizing said polymer precursor to from a polymer; and phase separating said liquid crystal and said polymer to form a liquid crystal polymer complex layer. The compound improves the initial refractive index, and the refractive index and contrast after energize-aging.
Owner:SEIKO EPSON CORP

High-power GaN-based vertical structure LED with light extraction microstructure and preparation method thereof

The invention discloses a high-power GaN-based vertical structure LED with a light extraction microstructure and a preparation method thereof. According to the invention, the LED prepared through the preparation method is provided with a light-emitting surface microstructure transferred through a laser-stripping sapphire pattern substrate and complemented with patterns positioned on the surface of the laser-stripping sapphire pattern substrate; a means which has great high repetitiveness and controls the light-emitting surface microstructure is provided because the morphology of the light-emitting surface microstructure of the laser-stripping sapphire pattern substrate can be controlled through a process means; besides, nanometer-level coarsing is additionally carried out on the local area of a light-emitting surface, therefore the morphology of the light-emitting surface is further optimized; a mirror surface metallic reflection layer is changed into a nanometer-level rough grain metallic diffuse reflection layer during the LED preparation of the traditional process, so that the diffuse reflection and scattering effect is enhanced, the collocation of the reflection layer and the light-emitting surface microstructure is optimized, and the extraction efficiency of light inside the LED is furthest increased. The preparation method disclosed by the invention is simple in process and high in repeatability and can be used for large-scale industrial production.
Owner:EPILIGHT TECH

Titanium dioxide light anode, and preparation method and use thereof

The invention discloses a titanium dioxide light anode, comprising a transparent conductive substrate and a coating film coated on the transparent conductive substrate. The coating film contains titanium dioxide nano particles, wherein a titanium dioxide microsphere layer is also coated on the surface of the coating film. The invention further discloses a method for preparing the titanium dioxide light anode and use thereof. Compared with the prior art, the invention has the advantages that by introducing the titanium dioxide light anode with a double-layer structure, the number of light propagation paths in a titanium dioxide film is increased; the rate that light is absorbed by the titanium dioxide film is increased; the photoelectric conversion efficiency of a cell is advantageous for being improved; the preparation of the titanium dioxide microsphere is simple, environment-friendly and cheap and the profile of the titanium dioxide microsphere is novel; the titanium dioxide microsphere is applicable for being used as a scattering layer and coated on a light anode of a dye-sensitized nanocrystalline solar cell; the titanium dioxide light anode with the double-layer structure is formed; the scattering characteristics of the light anode are improved; and the photoelectric conversion efficiency of the cell is improved.
Owner:NINGBO UNIV

Back reflection electrode with periodic structure and manufacturing method thereof

Provided is a back reflection electrode with a periodic structure. The back reflection electrode with the periodic structure comprises a substrate layer, first layer metal film which plays a role of a template, and second layer metal film which plays a role in decoration, wherein the two layers of metal film are metal Ag film or metal Al film or metal Mo film, and the back reflection electrode with the periodic structure is formed and has the function of broadband-spectrum scattering. A manufacturing method of the back reflection electrode with the periodic structure comprises the steps that PS microspheres are assembled through the water bath method, plasma etching is carried out on the PS microspheres through O2, the template effect of the etched polystyrene microspheres is used for obtaining the back reflection electrode with the periodic structure and the function of broadband-spectrum scattering, and the back reflection electrode with the periodic structure serves as a back reflection electrode of a thin film solar cell. The back reflection electrode with the periodic structure and the manufacturing method of the back reflection electrode with the periodic structure have the advantages that due to the fact that the template effect of the polystyrene microspheres and the mode that magnetron sputtering or evaporation is carried out on the metal film are used, manufacturing of the high-scattering back reflection electrode with the periodic structure is achieved, and when the back reflection electrode with the periodic structure is applied to the thin film solar cell, the short-circuit current density and conversion efficiency of the thin film solar cell are improved.
Owner:NANKAI UNIV

Method for distinguishing variety of fritillaria and detecting total alkaloid content of fritillaria by virtue of near infrared spectrum

The invention provides a method for distinguishing variety of fritillaria and detecting total alkaloid content of the fritillaria by virtue of near infrared spectrum. The method provided by the invention comprises the following steps: (1) collecting a fritillaria sample; (2) measuring the near infrared diffuse reflection spectrogram of the fritillaria sample, preprocessing the 4000-5000cm<-1> wave band in the spectrogram, and performing cluster analysis on the pre-processed near infrared spectrogram to build a qualitative model; or preprocessing the 4000-7000cm<-1> wave band in the spectrogram, so as to obtain an absorbance, associating the absorbance with the alkaloid content of the sample measured by virtue of bromothymol blue colorimetry, and building a quantitative correction model for detecting alkaloid by one or more methods of a partial least squares method, a principal component regression method and a multiple linear regression method; (3) collecting the near infrared spectrogram of the sample to be measured, after the corresponding preprocessing is performed, distinguishing the variety of the fritillaria and detecting total alkaloid content of the fritillaria by utilizing the built qualitative model or quantitative correction model. The method provided by the invention has the characteristics of fast speed, no damage, environment friendliness and low cost.
Owner:DALIAN UNIV OF TECH

Textured transparent conductive thin film with periodic structure and preparation method thereof

Provided is textured transparent conductive thin film with a periodic structure. The textured transparent conductive thin film with the periodic structure comprises a glass substrate layer, first layer ZnO thin film which plays a role in a template, and second layer ZnO thin film which plays a role in modification, wherein a laminated structure is formed by the glass substrate layer, the first layer ZnO thin film and the second layer ZnO thin film in sequence, the thickness of the first layer ZnO thin film is 300-1500nm, the thickness of the second layer ZnO thin film is 400-1000nm, and the textured transparent conductive thin film which has the scattering effect and is of the periodic structure is formed. A preparation method of the textured transparent conductive thin film with the periodic structure comprises the steps of using the water bath method to assemble PS microspheres, using O2 to carry out plasma etching on the PS microspheres, and obtaining the light-trapping ZnO transparent conductive thin film with the periodic structure through the template effect of the PS microspheres. The textured transparent conductive thin film with the periodic structure and the preparation method of the textured transparent conductive thin film with the periodic structure have the advantages that the prepared ZnO transparent conductive thin film has the good light-trapping effect, can serve as a front electrode to be applied to a thin film solar cell, and have a good scattering effect within the range of the wavelength which can be used by cells with the size of 400-1100nm, the optical distance of incident light in silicon-based thin-film cells can be increased, and the use ratio of light can be improved.
Owner:NANKAI UNIV

Manufacturing method for LED patterned substrate with double-layer micro-nano array structure

The invention discloses a manufacturing method for an LED patterned substrate with a double-layer micro-nano array structure, and relates to a semiconductor device. The manufacturing method comprises the following steps: performing spin-coating to obtain a first photoresist layer; manufacturing a first photoresist layer with a micro-nano spot array; performing primary dry etching; removing the first photoresist layer with the micro-nano spot array by using a wet method; performing spin-coating to obtain a second photoresist layer; manufacturing a second photoresist layer with a micro-nano spot array; performing secondary dry etching; and removing the second photoresist layer with the micro-nano spot array by using the wet method, thus manufacturing the LED patterned substrate with the double-layer micro-nano array structure. According to the method disclosed by the invention, due to the design of the first layer of micro-nano structure, the crystal lattice quality of GaN is improved; due to the design of the second layer of micro-nano structure, the light extraction efficiency of an LED is improved; the defect that the improvement on the crystal lattice quality of GaN and the maximum improvement on the light extraction efficiency of the LED can not be compatible in the prior art is overcome.
Owner:HEBEI UNIV OF TECH

LED energy-saving lamp tube with glass lamp tube

The invention relates to an LED energy-saving lamp tube with a glass lamp tube. The LED energy-saving lamp tube comprises the lamp tube, a lamp holder, an LED lamp strip, a lamp strip inserted strip and LED circuit boards, wherein the lamp tube is a circular glass lamp tube, the wall face above the pipe wall of the inner side of the glass lamp tube is in contact connection with the upper portion face of an aluminum profile inserted strip, a lamp strip inserted groove is formed in the lower bottom face of the aluminum profile inserted strip, the LED lamp strip is in inserted connection in the lamp strip inserted groove, the two ends, stretching out of the glass lamp tube, of the aluminum profile inserted strip are respectively in inserted connection with one LED circuit board, the upper wall face of the pipe wall of the inner side of one heat dissipation aluminum tube is in contact connection with the upper portion face of the aluminum profile inserted strip, and the outward side ends of the left sides and the right sides of the two heat dissipation aluminum tubes are in inserted connection with the lamp holder. According to the LED energy-saving lamp tube, the glass lamp tube is adopted, aging and deformation are not easily caused, the light-pervious effect is good and stable, the appearance is attractive, the installation is convenient, the scattering effect is good, and enough space inside the heat dissipation aluminum tubes is provided for containing LED circuit board components.
Owner:梁红燕

Anti-Strokes Raman fiber laser achieving multi-wavelength output

The invention discloses an anti-Strokes Raman fiber laser achieving multi-wavelength output and aims at providing a laser of which an output wavelength is adjustable and the output wavelength is smaller than a pump wavelength. The fiber laser is composed of a pulse light source, a continuous light source, a wavelength division multiplexer, a high raster, an optical fiber, a low raster and a filter. The central wavelength of the output light of the pulse light source is located at n stage Raman Strokes wavelength of the obtained light wavelength, the output light wavelength of the continuous light source is located at a first stage Raman Strokes wavelength of the output light wavelength of the pulse light source, a zero-dispersion wavelength of the optical fiber is located near the output light wavelength of the pulse light source, the central wavelength of the high raster and the central wavelength of the low raster are equal to the obtained laser wavelength, the input arm working wavelength of the wavelength division multiplexer is respectively equal to the central wavelength of the pulse light source and the central wavelength of the continuous light source, and the central wavelength of the filter is equal to the obtained light wavelength. The anti-Strokes Raman fiber laser is simple in structure, adjustable in the light wavelength and can output a laser shorter than the pump wavelength.
Owner:NAT UNIV OF DEFENSE TECH

Preparation method for high-refractivity scattering layer and preparation method for organic light-emitting diode (OLED) with high luminous efficiency

The invention discloses a preparation method for a high-refractivity scattering layer and a preparation method for an organic light-emitting diode (OLED) with high luminous efficiency. The preparation method for the high-refractivity scattering layer comprises the following steps of: S1, preparing grinding dispersion, wherein the grinding dispersion comprises 10 to 60 mass percent of high-refractivity scattering particle, a dispersing agent of which the mass is 1 to 60 percent based on the mass of the high-refractivity scattering particles, 0 to 5 mass percent of anti-settling agent, 0 to 60 mass percent of photoresist and 20 to 89.9 mass percent of organic solvent; S2, filter-pressing the grinding dispersion prepared by the step S1 by using filter paper with filtering hole apertures of 0.8 to 1.2 mu m to obtain a film preparation solution; and S3, photoetching and spinning the film preparation solution prepared by the step S2 to obtain the high-refractivity scattering layer. When the high-refractivity scattering layer is arranged between a substrate and an electrode of the OLED with the high luminous efficiency, the luminous efficiency of the OLED can be greatly improved.
Owner:GUAN YEOLIGHT TECH CO LTD

Manufacturing process of three-layer co-extrusion nano-modified BOPP matt film

The invention discloses a manufacturing process of a three-layer co-extrusion nano-modified BOPP matt film. The manufacturing process comprises the following steps: after mixing and drying raw materials of a coring layer, an upper surface layer and a lower surface layer, entering respective single screw extruders to carry out melt plastification, and then entering a die head through a filter and a metering pump; flowing out after converging a three-layer polymer melt at the position of the die head, quickly attaching to the surface of a quenching roller under the effect of an air knife attaching device, forming a solid sheet through quick cooling of the quenching roller and a water channel, then carrying out longitudinal and transverse stretching in sequence, and then instantly carrying out air cooling treatment; then subsequently carrying out online thickness measurement, boundary material cutting, static elimination, automatic rolling, aging treatment and slitting. The manufacturing process adopts a three-layer co-extrusion compounding technology, the BOPP matt film with high extinction property, good abrasion resistance and high rate of finished products is prepared by using an improved raw material formula.
Owner:HAINING CHANGKUN PACKAGING
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