High-power GaN-based vertical structure LED with light extraction microstructure and preparation method thereof

Abstract

The invention discloses a high-power GaN-based vertical structure LED with a light extraction microstructure and a preparation method thereof. According to the invention, the LED prepared through the preparation method is provided with a light-emitting surface microstructure transferred through a laser-stripping sapphire pattern substrate and complemented with patterns positioned on the surface of the laser-stripping sapphire pattern substrate; a means which has great high repetitiveness and controls the light-emitting surface microstructure is provided because the morphology of the light-emitting surface microstructure of the laser-stripping sapphire pattern substrate can be controlled through a process means; besides, nanometer-level coarsing is additionally carried out on the local area of a light-emitting surface, therefore the morphology of the light-emitting surface is further optimized; a mirror surface metallic reflection layer is changed into a nanometer-level rough grain metallic diffuse reflection layer during the LED preparation of the traditional process, so that the diffuse reflection and scattering effect is enhanced, the collocation of the reflection layer and the light-emitting surface microstructure is optimized, and the extraction efficiency of light inside the LED is furthest increased. The preparation method disclosed by the invention is simple in process and high in repeatability and can be used for large-scale industrial production.

Description

technical field [0001] The invention relates to an LED and a preparation method thereof, in particular to a high-power GaN-based vertical structure LED with a light extraction microstructure and a preparation method thereof. Background technique [0002] As a potential solution for the next generation of high-power GaN-based LEDs (High-power LEDs), vertical structure LEDs are gaining great attention and development in the industry. Compared with the traditional formal structure, the vertical structure peels off the sapphire substrate, and the reflective layer can be directly arranged on the epitaxial P-type layer. The light from the active area inside the device randomly directed to the non-light-emitting surface is directly reflected by the reflective layer. The usual reflective layer is The metal reflective layer or the Bragg distributed reflective layer made of dielectric materials, etc., avoids the reduction of the light extraction efficiency caused by the random radiati...

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a high-power GaN-based vertical structure LED with a light extraction microstructure and its preparation method to solve the problems of low light extraction efficiency and light emission of LEDs in the prior art. Problems such as low repeatability of the extracted structure

Images