Packaging process of flexible semiconductor film electronic device

A technology of electronic devices and packaging technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, electrical components, etc., and can solve problems that affect device performance, increase production costs, and poor water-oxygen barrier performance

Active Publication Date: 2014-08-20
GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the poor water-oxygen barrier properties of organic films, in practice, multiple inorganic/organic films with repeated structures are often required to meet the water-oxygen barrier requirements.
This not only leads to the complex structure of the thin film encapsu

Method used

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  • Packaging process of flexible semiconductor film electronic device
  • Packaging process of flexible semiconductor film electronic device
  • Packaging process of flexible semiconductor film electronic device

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0036] Example 1.

[0037] A packaging process for a flexible semiconductor thin film electronic device includes the process of preparing a water and oxygen barrier layer. The water and oxygen barrier layer is formed by stacking one or more groups of water and oxygen barrier units, preferably two layers.

[0038] Each group of water and oxygen barrier units includes an organic barrier layer and an inorganic barrier layer. The surface of the organic barrier layer has an uneven topographic structure, and the inorganic barrier layer is arranged on the upper surface of the organic barrier layer.

[0039] Because the surface of the organic barrier layer has uneven morphology, the water and oxygen barrier unit composed of the inorganic barrier layer and the organic barrier layer can increase the scattering effect of water vapor and oxygen molecules during the diffusion inside the organic film, and reduce the water and oxygen molecules. Diffusion channels, thereby reducing the permeability...

Example Embodiment

[0044] Example 2.

[0045] A packaging process for flexible semiconductor thin film electronic devices. The other features are the same as those in embodiment 1, except that the organic barrier layer is prepared by using photoresist doped with inorganic particles as raw materials, and the surface of the organic barrier layer has some inorganic A bulging bulge with particles.

[0046] Wherein, the particle size of the inorganic particles doped in the photoresist is 0.01-10 um, and the amount of the inorganic particles mixed is 0.01 g / mL-5 g / mL. Preferably, the particle size of the inorganic particles doped in the photoresist is 2-5 um, and the mixing amount of the inorganic particles is 0.2 g / mL.

[0047] In the present invention, by doping inorganic particles to form protrusions on the surface of the organic barrier layer, the surface of the organic barrier layer is formed with uneven topography structure, and the inorganic barrier layer is prepared on the surface of the organic ba...

Example Embodiment

[0048] Example 3.

[0049] A packaging process for a flexible semiconductor thin film electronic device. The other features are the same as those in Embodiment 1 or 2, except that: a base layer preparation process is also provided, that is, the base layer is prepared on the surface of the flexible semiconductor thin film electronic device to be packaged, and then A water and oxygen barrier layer is prepared on the base layer.

[0050] The material of the base layer can be Al 2 O 3 Or Si 3 N 4 Or SiO 2 Such as inorganic materials, the thickness is usually 20~200nm. The base layer and the device to be packaged have good bonding performance, and the water and oxygen barrier layer can be stably prepared on the base layer.

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Abstract

The invention discloses a packaging process of a flexible semiconductor film electronic device. The packaging process comprises a water and oxygen blocking layer preparation working procedure, wherein a water and oxygen blocking layer is formed by one or more water and oxygen blocking units in a stacking mode, each water and oxygen blocking unit comprises an organic blocking layer and an inorganic blocking layer, an uneven morphology structure is arranged on the surface of each organic blocking layer, and each inorganic blocking layer is arranged on the upper surface of the corresponding organic blocking layer. The uneven morphology structure on the surface of an organic film is a regular pattern or an irregular pattern. The uneven morphology structure on the surface of each organic blocking layer is formed in a photoetching mode or physical embossing mode or through particle addition. The uneven morphology structure of the surface of each organic blocking layer is of a rectangular structure or zigzag structure or arc structure. The flexible semiconductor film electronic device is simple in manufacturing process and high in water and oxygen blocking performance, and the device can be kept to be thin while the good water and oxygen isolation performance of the device can be achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a packaging process for flexible semiconductor thin film electronic devices. Background technique [0002] In order to achieve a good water-oxygen insulation effect, flexible semiconductor thin film electronic devices need to be packaged after they are fabricated. In the prior art, the packaging technology for flexible semiconductor thin film electronic devices usually uses multiple materials to be stacked layer by layer, and utilizes the advantages of different materials to achieve the effect of water and oxygen isolation. [0003] At present, the most widely used material system is the inorganic / organic hybrid multi-layer film composed of inorganic thin film and organic thin film. In the inorganic / organic hybrid multilayer film structure, the inorganic film has a good water-oxygen barrier effect and plays a major role in the isolation of the multilayer film. ...

Claims

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Application Information

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IPC IPC(8): H01L21/56
CPCH01L21/56H01L23/31
Inventor 徐苗李洪濛邹建华陶洪王磊彭俊彪
Owner GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
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