Organic electroluminescence device and manufacturing method thereof

An electroluminescent device and electroluminescent technology, which are applied in the manufacturing of organic semiconductor devices, electric solid-state devices, and semiconductor/solid-state devices, etc., can solve the problems of large preparation process and difficulty, narrowing of the viewing angle, and deviation of the emission color, etc. Achieve the effect of increasing scattering and absorption cross-section, maintaining color, and improving luminous efficiency

Active Publication Date: 2014-01-01
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, for methods such as forming periodic or quasi-periodic microstructure patterns on the cathode and attaching photonic crystals or microlens arrays to glass substrates, nanophotographic technology is oft

Method used

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  • Organic electroluminescence device and manufacturing method thereof
  • Organic electroluminescence device and manufacturing method thereof
  • Organic electroluminescence device and manufacturing method thereof

Examples

Experimental program
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Example Embodiment

[0064] Corresponding to the organic electroluminescent device provided by the embodiment of the present invention, the embodiment of the present invention also provides a method for preparing an organic electroluminescent device, which includes a method for preparing a pixel defining layer, such as image 3 As shown, the method for preparing the pixel defining layer includes:

[0065] 101. Form a matrix material layer doped with nano metal particles on a substrate provided with an anode.

[0066] Among them, the matrix material can be SiO 2 Particles, polyimide, SiO 2 Gel etc. The introduction of the nano metal particles can be referred to the foregoing embodiment, which will not be repeated here.

[0067] 102. Process the matrix material layer through a patterning process to obtain a pixel defining layer of a desired shape.

[0068] In this step, the patterning process mainly refers to the process of processing the matrix material through the steps of exposure, development and / or etc...

Example Embodiment

[0100] Example 1 contains Ag-SiO 2 Organic electroluminescent device with pixel defining layer

[0101] Such as figure 1 Shown. Deposit a layer of SiO by electron beam evaporation or vapor deposition on the substrate 1 containing the anode 2 (such as ITO) 2 膜31。 Film 31.

[0102] Then in SiO 2 The surface of the thin film 31 is coated with a 2nm thick silver layer by sputtering. During sputtering, the pressure in the cavity is 10Pa, the atmosphere is argon, and the airflow is maintained at 30sccm (standard-state cubic centimeter per mimute). Per minute), the sputtering current is 0.2A, the voltage is 0.5KV, and the substrate temperature is 200°C. Then put it in a vacuum less than 1x10 -3 After annealing at 300° C. for half an hour in a Pa vacuum environment, it is cooled to room temperature to form a discontinuous nano-silver particle layer 32.

[0103] Then deposit a layer of SiO on the discontinuous nano-silver particle layer 32 by electron beam evaporation or vapor deposition. 2...

Example Embodiment

[0107] Example 2 contains Au-SiO 2 Organic electroluminescent device with pixel defining layer

[0108] Such as figure 2 As shown, this embodiment adopts multi-target magnetron sputtering technology to prepare Au-SiO with metal nanoparticles dispersed oxide 2 Composite film. In the dual-target magnetron sputtering chamber, one target is placed with high-purity SiO 2 , A place of high purity Au. The sputtering gas is high purity argon (99.995%). The vacuum of the chamber before sputtering is -5 Pa, sputtering pressure is 1.6×10 -1 Pa. The flow rates of argon and oxygen during sputtering were 8.3×10 -8 m 3 / s and 5.8×10 -8 m 3 / s, SiO 2 The RF power of Au and Au are 200W and 50W respectively. By adjusting the opening of the shielding plate in front of the sputtering target, the ratio of the material deposited on the substrate is selected, and finally Au-SiO with different doping ratios is obtained 2 Composite film.

[0109] The Au-SiO 2 The composite film is processed to obtain t...

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Abstract

The embodiment of the invention relates to the technical field of electroluminescence, and provides an organic electroluminescence device which aims to improve luminous efficiency of the organic electroluminescence device. The organic electroluminescence device comprises a pixel definition layer and a luminescence structure, and nano metal particles are mixed in the pixel definition layer. The manufacturing method can be applied to manufacture processes of the organic electroluminescence device.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an organic electroluminescent device and a preparation method thereof. Background technique [0002] The basic structure of an organic electroluminescent device is that one or more organic light-emitting layers are sandwiched between two layers of electrodes. Two layers of electrodes are respectively used as the anode and cathode of the device. The electrodes can be made of metal or metal oxide materials. Under the action of an applied voltage, the carrier electrons and holes are injected into the organic light-emitting layer from the direction of the cathode and the direction of the anode, respectively, and meet and recombine to generate excitons. The energy of the excitons decays in the form of light, thereby radiating light, realizing Electroluminescence effect. In organic electroluminescent devices, there are mainly two aspects of energy loss. First, when injected carrie...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/54H01L51/56
CPCH10K50/85H10K71/00H10K59/122H10K50/11H10K2102/331
Inventor 代青刘则
Owner BOE TECH GRP CO LTD
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