Preparation method for high-refractivity scattering layer and preparation method for organic light-emitting diode (OLED) with high luminous efficiency
A technology of high refractive index and scattering layer, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, electric solid-state devices, etc., can solve the problem of poor surface flatness of the scattering film layer, the lack of scattering effect of the film layer, and particles in the scattering film Unevenness and other problems, to achieve good flatness, improved light extraction efficiency, and uniform film-making solution
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Example Embodiment
[0045] Example 1
[0046] This embodiment provides a method for preparing a high refractive index scattering layer, which includes the following steps:
[0047] S1. Preparation of a grinding dispersion, the grinding dispersion comprising:
[0048] High refractive index scattering particles. In this embodiment, the high refractive index scattering particles are selected as TiO 2 , Its weight is selected as 15g, and its mass percentage is 18.6%;
[0049] Dispersant, the dispersant selected byk-163 produced by BYK Chemical Co., Ltd. as the dispersant, the weight of which is selected to be 1.2 g, and its mass accounts for 8% of the high refractive index scattering particles;
[0050] Organic solvent, select propylene glycol methyl ether acetate as the organic solvent, the weight is 60g, and the mass percentage is 78.74%;
[0051] Put the above-prepared solution into the grinding jar, fix the grinding jar and the grinding column, add 90ml zirconium beads (note: the amount of zirconium beads ...
Example Embodiment
[0062] Example 2
[0063] This example is improved on the basis of Example 1. An anti-settling agent is added to the grinding dispersion, and byk-410 produced by BYK Chemical Co., Ltd. is selected. The weight is selected as 0.8g, and the mass percentage is 1.03. %;
[0064] Moreover, in this embodiment, the following step is further included between step S2 and step S3: adding photoresist to the film forming solution prepared in step S2; in this embodiment Wherein, the photoresist is selected to be mixed with the film forming solution, and the mass percentage of the photoresist is 40%.
[0065] In this embodiment, the thickness of the scattering layer is 0.6 um. The light extraction efficiency of the OLED device prepared by the preparation method in this embodiment is improved by 100%.
Example Embodiment
[0066] Example 3
[0067] The preparation method of the high refractive index scattering layer provided in this embodiment includes the following steps:
[0068] S1. Preparation of a grinding dispersion, the grinding dispersion comprising:
[0069] High refractive index scattering particles, the mass percentage is: 10%;
[0070] Dispersant whose mass accounts for 36% of the high refractive index scattering particles, that is, its mass percentage is 3.6%;
[0071] Anti-settling agent, its mass percentage: 5%;
[0072] Photoresist, its mass percentage is: 51.5%;
[0073] Organic solvent, its mass percentage is: 30%;
[0074] S2, using filter paper with a filter pore size of 0.9um to filter the grinding dispersion prepared in step S1 to obtain a membrane-forming solution;
[0075] S3. The film-forming solution prepared in step S2 is spin-coated by photolithography to obtain a high refractive index scattering layer.
[0076] In this embodiment, the high refractive index scattering particles are...
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