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Preparation of amorphous silicon germanium of thin film solar cell

A solar cell and amorphous silicon germanium technology, applied in the field of optical materials, can solve problems such as large adhesion coefficient, poor material performance, and increased disorder of the film, and achieve the effect of excellent performance accuracy and high quality

Inactive Publication Date: 2015-06-03
QINGDAO SPARKLE ELECTRONICS SCI & TECH
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Problems solved by technology

However, the addition of germanium will lead to the deterioration of the performance of a-SiGe:H material, and introduce a large amount of germanium dangling bond resistance into the material.
In addition, the adhesion coefficient of germanium-related groups is large, and when the hydrogen atoms on the growth surface are not covered enough, the disorder of the film will increase.

Method used

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Embodiment Construction

[0007] a.SiGe: H film in high vacuum multi-chamber RF. Prepared in a PECVD system with an RF power of 13.56 MHz. The deposition pressure is 133 Pa, the RF power is 10 W, the total gas flow is 125 seem, and the flow ratio of silane and germane is fixed at 20:1. The hydrogen dilution ratio, defined as the ratio of hydrogen flow to the sum of silane and germane flows, varies from 6:1 to 18:1. The substrate temperature was varied from 200°C to 335°C. The substrates used in the samples are all Corning 7059 glass.

[0008] a. SiGe:H film thickness was measured by a reflectometer film thickness measurement system (Angstrom Sun Technologies Ine.). Conductivity measurement adopts coplanar aluminum electrode method, uses Keithley 6517B electrometer to measure current, dark current is measured in metal dark box, and photocurrent is measured under AM1.5, 100roW / era2 light. The transmittance and reflectance of the film were measured by an ultraviolet-visible spectrophotometer (7-SCSPEC...

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Abstract

The invention provides preparation of amorphous silicon germanium of a thin film solar cell. The technical scheme is that the influence of a hydrogen dilution ratio and substrate temperature on thin film photoelectric performance is researched. A high-quality amorphous silicon germanium thin film with an optical band gap of 1.5 eV and photosensitivity of 6*10<4> is prepared through optimization of the hydrogen dilution ratio and the substrate temperature. An amorphous silicon germanium (a. SiGe:H) single-junction solar cell with efficiency of 6.65 percent is prepared on the basis. The preparation has the advantage that the influence of the hydrogen dilution ratio and the substrate temperature on the photoelectric performance of the a. SiGe:H material in an RF-PECVD (Radio Frequency Plasma Enhanced Chemical Vapor Deposition) process is researched to prepare the high-quality a. SiGe:H thin film and prepare the a. SiGe:H cell on the basis.

Description

technical field [0001] The invention belongs to the technical field of optical materials, and in particular relates to the preparation of amorphous silicon germanium for thin-film solar cells. Background technique [0002] The a-SiGe:H material has the characteristics of continuously adjustable band gap, which is very suitable for use in multi-junction thin film solar cells. Using a-SiGe:H as the middle cell and the bottom cell can improve the absorption of the laminated cell in the long-wavelength region of sunlight, thereby improving cell efficiency. However, the addition of germanium will lead to the deterioration of the performance of a-SiGe:H material, and introduce a large amount of germanium dangling bond resistance into the material. In addition, the adhesion coefficient of germanium-related groups is large, and when the hydrogen atoms on the growth surface are not covered enough, the disorder of the film will increase. Contents of the invention [0003] The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20H01L21/205
CPCH01L21/02532H01L21/0262H01L31/204Y02E10/50Y02P70/50
Inventor 谭秀航
Owner QINGDAO SPARKLE ELECTRONICS SCI & TECH
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