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Solar cell based on silicon nanowires

A technology of solar cells and silicon nanowires, which is applied in the field of solar cells, can solve problems such as the difficulty in reducing the light reflection coefficient of the substrate, the difficulty in obtaining high-quality suede light trapping, and the increase in the density of substrate surface defects, so as to improve energy conversion Efficiency, good light trapping effect, effect of improving passivation performance

Inactive Publication Date: 2016-07-20
黄广明
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the uneven size and wide distribution of the suede surface of this structure, the defect density on the substrate surface is greatly increased, and it is difficult to obtain high-quality light trapping on the front surface of the suede surface, and it is not easy to reduce the reflection coefficient of the substrate to light. Intrinsic amorphous silicon layer of the structure is poorly passivated

Method used

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  • Solar cell based on silicon nanowires

Examples

Experimental program
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Effect test

Embodiment 1

[0016] The solar cell of this example includes a positive electrode 1, an indium tin oxide transparent conductive film 2, an N-type amorphous silicon layer 3, an i-type layer 4, a P-type silicon substrate 5, and a back electrode 6, wherein the back electrode 6 is located on the P-type silicon substrate. On the back of the substrate 5, the upper surface of the P-type silicon substrate 5 adopts a nanowire array structure, and the i-type layer 4, the N-type amorphous silicon layer 3 and the indium tin oxide transparent conductive film 2 are sequentially stacked on the surface of the nanowire array structure, The positive electrode 1 is arranged on the top of the nanowire array structure. The positive electrode 1 is made of a Ti / Pd / Ag multilayer metal material with a thickness of 20nm / 20nm / 40nm; the thickness of the N-type amorphous silicon layer 3 and the i-type layer 4 are both 10nm; the silicon nanowire array , the diameter of each silicon nanowire is 40nm, and the length is 5 ...

Embodiment 2

[0018] The structure of the solar cell of this example is the same as that of Embodiment 1, that is, the solar cell using a silicon nanowire array structure, and its parameters change as follows:

[0019] Both the N-type amorphous silicon layer 3 and the i-type layer 4 have a thickness of 30 nm; in the silicon nanowire array, each silicon nanowire has a diameter of 60 nm and a length of 8 μm; the P-type silicon substrate 5 has a thickness of is 300 μm.

Embodiment 3

[0021] The structure of the solar cell of this example is the same as that of Embodiment 1, that is, the solar cell using a silicon nanowire array structure, and its parameters change as follows:

[0022] Both the N-type amorphous silicon layer 3 and the i-type layer 4 have a thickness of 50 nm; in the silicon nanowire array, each silicon nanowire has a diameter of 80 nm and a length of 10 μm; the P-type silicon substrate 5 has a thickness of is 400 μm.

[0023] The manufacturing method of the solar cell of the embodiment 1-3 is: first form the nanowire array structure by dry etching or wet etching on the upper surface of the P-type silicon substrate 5; Depositing and forming microcrystalline silicon intrinsic layer, amorphous silicon germanium intrinsic layer, amorphous silicon intrinsic layer and microcrystalline silicon carbide intrinsic layer by PECVD method to form i-type layer 4, and then depositing by PECVD method to form N-type Amorphous silicon layer 3, forming an in...

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Abstract

The invention discloses a solar cell based on silicon nanowires. The solar cell comprises a back electrode (6) and a P-type silicon substrate (5), and is characterized in that: the upper surface of the P-type silicon substrate (5) adopts a silicon nanowire array structure, an i-type layer (4), an N-type amorphous silicon layer (3) and an indium tin oxide transparent conductive film (2) are laminated on the surface of the silicon nanowire array structure in sequence, the top end of the silicon nanowire array structure is provided with a positive electrode (1), the i-type layer (4) comprises a microcrystalline silicon intrinsic layer, an amorphous silicon germanium intrinsic layer, an amorphous silicon intrinsic layer and a microcrystalline silicon carbide intrinsic layer which are laminated on the surface of the silicon nanowire array structure in sequence. Since the surface of the P-type silicon substrate adopts the nanowire structure, the solar cell based on the silicon nanowires has good light trapping effect, increases carrier collection efficiency, changes structure and materials of the i-type layer, improves its passivation property, and improves energy conversion efficiency of the solar cell.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell based on silicon nanowires. Background technique [0002] Since the industrial revolution, with the development and progress of industrialization, the demand for energy has also increased sharply, among which fossil fuels are the most important energy materials. However, the total reserves of fossil fuel energy on the earth are limited, and they are non-renewable energy sources, so the world is facing a severe energy situation. At the same time, the use of fossil fuels releases a large amount of toxic gas and carbon dioxide gas, causing serious environmental pollution and greenhouse effect, and causing unprecedented disasters to the living environment of human beings. People have been strongly aware of the seriousness of the negative impact of the use of fossil fuels. Therefore, the proposal of "changing the energy structure and protecting the earth" has been u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/028H01L31/0352H01L31/075
CPCH01L31/02366H01L31/028H01L31/035227H01L31/075Y02E10/547Y02E10/548
Inventor 黄广明
Owner 黄广明
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