Method for preparing amorphous silicon germanium thin-film batteries with box type PECVD (plasma enhanced chemical vapor deposition) equipment

Abstract

The invention solves the problem that during the process of preparing amorphous silicon germanium thin-film battery components, the germanium content on a glass substrate of a prepared amorphous silicon germanium thin film is not due to different decomposition speeds and decomposition amounts of gas on the upper end and the lower end of the substrate, which affects the performance of the battery components, and provides an equipment for preparing amorphous silicon germanium thin-film batteries and a preparation method of the equipment. The equipment solves the problem of non-uniform germanium content on the upper and the lower parts of the glass substrate in a manner of gas compensation through design modification of the structure of partial electrodes generating a plasma field, and achieves low-cost and easily implemented preparation of large-area amorphous silicon germanium thin films and amorphous silicon-germanium thin-film batteries with uniform component content by using a box type PECVD (plasma enhanced chemical vapor deposition) equipment.

Description

technical field [0001] The invention belongs to the field of vacuum coating equipment and methods, and mainly relates to an amorphous silicon-germanium thin-film battery with large area and uniform composition prepared on box-type PECVD equipment. Background technique [0002] In recent years, the development of thin-film photovoltaic devices and large-area modules has received worldwide attention. Especially hydrogenated amorphous silicon (a-Si) and nanocrystalline silicon (nc-Si) show great potential to play a pivotal role in applications such as building-integrated photovoltaics. An important feature of thin-film solar photovoltaic cells formed at relatively low temperatures below 260 °C is the use of well-established industrial coating equipment and procedures to simultaneously achieve reduced production by depositing silicon semiconductor and electrical contact layers on large-area inexpensive substrates. cost and the purpose of improving device performance. The laser...

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Problems solved by technology

[0006] In order to solve the problem of uneven germanium component content on the glass substrate in the prepared amorphous silicon germanium thin film due to the different decomposition speed and decomposition amount of gas at the upper and lower ends of the substrate during the preparation of amorphous silicon germanium thin film battery components, which affects the battery components. Performance problem, the object of the present invention is to provide a kind of by improving the design of the structure of part of the electrodes that generate the plasma field, to solve the problem of uneven composition of germanium at the upper and lower positions of the glass substrate by means of gas compensation The equipment and preparation method of amorphous silicon germanium thin film battery realize the low-cost and easy-to-implement preparation of large-area and uniform amorphous silicon germanium thin film and amorphous silicon germanium thin film battery on box type PECVD equipment

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