The invention relates to an infrared detector and a preparation method thereof. The infrared detector comprises a substrate, a thermosensitive layer, a dielectric layer, an electrode layer and a passivation layer, wherein the thermosensitive layer, the dielectric layer, the electrode layer and the passivation layer are located on the substrate, the dielectric layer is located between the thermosensitive layer and the electrode layer, the thermosensitive layer is located on one side, close to the substrate, of the dielectric layer, and the passivation layer is located on one side, away from the substrate, of the electrode layer. The infrared detector comprises a plurality of infrared detector pixels arranged in a matrix, each infrared detector pixel comprises an absorption plate structure, at least two micro-bridge columns and at least two beam structures, and the absorption plate structures are connected to the corresponding micro-bridge columns through the corresponding beam structures; the thermosensitive layer covers the area where the absorption plate structure and the beam structure are located, and the passivation layer covers the area where the absorption plate structure and the beam structure are located; and the material for forming the thermosensitive layer comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium. According to the technical scheme, the thermal response time of the infrared detector is shortened, and the infrared response rate of the infrared detector is improved.