A kind of infrared detector and preparation method thereof

Abstract

The present disclosure relates to an infrared detector and a preparation method thereof. The infrared detector includes a substrate, an electrode layer and a thermosensitive layer located on the substrate. The electrode layer is located on the side of the thermosensitive layer adjacent to the substrate. Layer contact arrangement; the infrared detector includes a plurality of infrared detector pixels arranged in a matrix, the infrared detector pixels include an absorption plate structure, at least two micro-bridge columns and at least two beam structures, and the absorption plate structure passes through the corresponding beam structure connected to the corresponding micro-bridge column; the heat-sensitive layer covers the area where the absorption plate structure and the beam structure are located; wherein, the material constituting the heat-sensitive layer includes one of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium or several; the material constituting the electrode layer at least includes titanium-tungsten alloy. Through the technical solution of the present disclosure, the thermal response time of the infrared detector is reduced, and the infrared response rate of the infrared detector is improved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, and in particular, to an infrared detector and a preparation method thereof. Background technique [0002] Non-contact infrared detectors include, for example, non-contact temperature sensors. The detection principle is that the infrared detector converts the infrared radiation signal emitted by the target object to be measured into a thermal signal, and the thermal signal is converted into an electrical signal through the detector sensitive element, and then the thermal signal is converted into an electrical signal. The electrical signal is processed and output by the circuit chip, and the infrared detector thus realizes the infrared detection function. [0003] The infrared detector includes absorption plate structure and beam structure. The performance of the absorption plate structure and beam structure directly affects the thermal response performance and detection perfor...

AI Technical Summary

Problems solved by technology

[0003] The infrared detector includes an absorbing plate structure and a beam structure. The performance of the absorbing plate structure and the beam structure directly affects the thermal response performance and detection performance of the infrared detector. Generally, the absorbing plate structure corresponding to the infrared detector needs to make a separate supporting film layer. To support the absorbing plate structure after the infrared detector releases the sacrificial layer, but the setting of the supporting film layer will lead to an increase in the thickness of the infrared detector absorbing plate structure, which will lead to an increase in the thermal response time of the infrared detector and affect the infrared detection of the infrared detector. performance

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