The invention discloses a thin film transistor for an electrowetting display device and a manufacturing method thereof. The thin film transistor comprises a basal plate, a bottom conducting film layer, a first insulating film layer, a semiconductor amorphous silicon film layer, a second conducting film layer, a second insulating layer, a fourth conducting film layer and an organic leveling film layer; the bottom conducting film layer is arranged on the basal plate; the first insulating film layer is covered above the bottom conducting film layer; the semiconductor amorphous silicon film layer is covered on the first insulating film layer; the second conducting film layer is partially covered on the semiconductor amorphous silicon film layer, and the second layer of the insulating film layer is covered above the first insulating film layer, the semiconductor amorphous silicon film layer and the second conducting film layer; the organic leveling film layer is covered on the second insulating layer; and the fourth conducting film layer is covered on the organic leveling film layer. Compared with the prior art, the invention has the advantages that the reaction speed is improved as the organic leveling film layer is added; a drain electrode and a public electrode are both connected with the same plane by the conducting film layers, therefore, the reaction speed is accelerated; and the opening rate of the product is improved.