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75 results about "Thermal response time" patented technology

The thermal response of a temperature sensor is the speed at which it responds to a sudden change in temperature. Thermal response time (ῖ) is the time taken for the sensor to react to this change in temperature.

Quick thermal response composite phase change heat reservoir and preparation method thereof

ActiveCN106918259AImprove thermal conductivityThermal conductivity improvement and increaseHeat storage plantsHeat exhanger finsHeat conductingAlloy
The invention provides a quick thermal response composite phase change heat reservoir and a preparation method thereof, and can solve the problems of long thermal response time and low heat dissipating efficiency of a phase change heat reservoir prepared by single phase change paraffin. The quick thermal response composite phase change heat reservoir is realized through the following methods: forward and reverse continuous U-shaped heat dissipating groove cavities serially connected in a linear array sequence are formed in an inner cavity of a heat storage container; the forward U-shaped heat dissipating cavity serves as a paraffin cavity filled with phase change paraffin (4); the reverse U-shaped heat dissipating cavity serves as an alloy cavity filled with a phase change alloy (5); the high-heat-conductivity phase change alloy and the high-enthalpy-value phase change paraffin are sealed as a whole through sealing of upper and lower sealing cover plates (2); and a phase change paraffin and phase change alloy filling port of the heat reservoir is further welded through laser to realize preparation of the quick thermal response composite phase change heat reservoir. The high-efficiency heat transfer of the phase change heat reservoir is realized by the combined effect of the high-heat-conductivity phase change alloy with the heat conducting coefficient of being not less than 15 W/(m. K) and the high-heat-conductivity aluminum alloy of the phase change heat reservoir.
Owner:10TH RES INST OF CETC

Epoxy resin with shape memory property and preparation method thereof

InactiveCN103554838AEasy to adjustThe molding process is matureMechanical propertyBisphenol A
The invention relates to the technical field of high polymer materials, and particularly relates to an epoxy resin with the shape memory property and a preparation method thereof. The epoxy resin with the shape memory property comprises the following raw materials in parts by weight: 100 parts of epoxy resin, 20.6-35.5 parts of sebacic monobasic amine, 14.4-20.3 parts of curing agent and 0.1-2.2 parts of curing catalyst, wherein the epoxy resin is bisphenols A epoxy resin and aliphatic epoxy resin blended resin. The influence temperature can be conveniently adjusted by changing the content and the alkyl group length of the sebacic monobasic amine or the content of the epoxy resin in the formula; the epoxy resin with the shape memory property is short in heat response time and fast in shape recovery rate and has a good shape memory effect after the shape memory repeatedly circulates; the forming process of the epoxy resin with the shape memory property is mature and low in cost; the epoxy resin with the shape memory property has relatively good mechanical property and thermal property, good chemical resistance and the characteristics of super toughness, impact resistance, wear resistance, low friction coefficient and the like and is difficult to deform, melt and burn at a high temperature environment.
Owner:DONGGUAN JIEYUE SHENGSHI SPORTS GOODS

Nuclear grade platinum resistance thermometer and its method for reducing thermal response time

The invention relates to a nuclear-grade platinum resistance thermometer and the method for reducing thermal response time with the invention, comprising a terminal box, a wiring board arranged in the terminal box, and a protective sleeve with a built-in platinum resistance element, wherein, the temperature sensing surface of the platinum resistance element is clung tightly to the inner surface of the protective sleeve, and no MgO powder is filled between the platinum resistance element and the protective sleeve; the outer surface of the protective sleeve is clung tightly to the inner surface of an external protective tube; the platinum resistance element is welded with an armored leading wire; MgO powder is filled in the armored leading wire; a metal coat is plated on the outer surface of the protective sleeve. The invention has the advantages that due to the temperature sensing surface of the platinum resistance element clung tightly to the protective sleeve and the protective sleeve clung tightly to the external protective tube, the heat conductivity of the thermometer is improved; the thermal response time is reduced; the earthquake resistant requirement for nuclear power station is satisfied; due to wear-resistant, heat-resistant, and oxidation-resistant special metal coating on the surface of the protecting sleeve, the protecting sleeve does not stick to the protective tube due to oxidation corrosion.
Owner:NO 3 AUTOMATION INSTR & METERS FACTORY SHANGHAI AUTOMATION INSTR & METERS CO LTD

Thermal type wind sensor based on anisotropic heat-conducting substrate and preparation method therefor

The invention discloses a thermal type wind sensor based on an anisotropic heat-conducting substrate; a chip of the sensor comprises the anisotropic heat-conducting substrate; four heating elements are symmetrically distributed at the center of the upper surface of the anisotropic heat-conducting substrate; four thermal sensing temperature-measuring elements are symmetrically distributed at the periphery of the four heating elements; the back surface of the anisotropic heat-conducting substrate is contacted with external environment so as to detect wind speed and wind direction; a glass heat-insulation inner ring is inlaid among the heating elements in the anisotropic heat-conducting substrate and silicon substrates under the thermal sensing temperature-measuring elements; a glass heat-insulation outer ring is inlaid among the silicon substrates under the thermal sensing temperature-measuring elements and silicon substrates at the edge of the chip; the two glass heat-insulation rings can ensure that the thickness of the anisotropic heat-conducting substrate is thinned to be about 100 microns by a thinning technology on one hand, the total power consumption of the sensor can be reduced on the other hand so that the sensor keeps higher signal sensitivity and shorter thermal response time under the lower power consumption.
Owner:SOUTHEAST UNIV

Heat supply system thermal delay time identification method based on Pearson correlation coefficient and moving average method

The invention relates to the technical field of heat supply, and discloses a heat supply system thermal delay time identification method based on a Pearson correlation coefficient and a moving averagemethod. The method is based on historical big data; external climate data and building temperature are combined; the method is based on a Pearson correlation coefficient and a moving average method.The thermal response time of the heating station or the secondary network is automatically obtained through a data identification method; according to the method, only common historical operation dataof the heat supply system needs to be obtained; the thermal response time of the heat supply system is identified through a big data method; the method does not depend on high-quality data collection, is not liable to be affected by single fault data or abnormal data, formulates different energy storage or scheduling strategies according to different delay time of the heat supply network based onan identification result, facilitates the improvement of the refinement degree of the operation and regulation of the heat supply system, and reduces the operation energy consumption level of the heat supply network.
Owner:ZHEJIANG UNIV

Uncooled infrared focal plane detector array thermal response time test system and method

The invention provides an uncooled infrared focal plane detector array thermal response time test system and method. The system comprises a black body, a chopper, a detected detector assembly, and a test system. The test method includes: radiations emitted by the black body are chopped by the chopper and are irradiated to a tested uncooled infrared focal plane detector array, the tested uncooled infrared focal plane detector array generates different responses for the radiations of different frequencies, response values of the tested uncooled infrared focal plane detector array with different chopping frequencies are acquired, response amplitudes of corresponding frequency points in a frequency domain are obtained through fast Fourier transform (FFT), and the thermal response time is calculated through fitting according to a formula shown in the description. According to the method, FFT is employed, the influence of noise on the test of the thermal response time is effectively eliminated, the measuring precision is high, and test results are reliable and stable; and the test can be conducted by employing standard devices including the black body and the chopper etc., the test time is short, the feasibility is high, and the efficiency is high.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Modified epoxide resin with thermal driving shape memory function and preparation method thereof

The invention relates to a modified epoxide resin with a shape memory function and a preparation method of the modified epoxide resin, belonging to the technical field of a functional high molecular material. The response temperature of the modified epoxide resin material provided by the invention can be adjusted within the range of 32-60 DEG C, the material can be bent at a large angle of 720 degrees at the temperature more than the thermal response temperature, and the shape fixed rate and recovery rate of the modified epoxide resin reach 100%. The preparation method of the modified epoxide resin comprises the following steps of: firstly, preparing end sulfydryl dihydric alcohol ester; secondly, preparing modified epoxide resin; and thirdly, preparing the modified epoxide resin with the shape memory function. Compared with the existing shape memory material, the modified epoxide resin has the advantages of being simple in preparation technology, capable of meeting a green environment protection requirement, low in thermal response temperature, capable of being adjusted, capable of realizing saturated solidifying, low in solidifying temperature, short in solidifying time, short in thermal response time, large in sample flexible angle, and high in shape recovery rate.
Owner:ZHONGBEI UNIV

High-sensitivity thermal-response platinum resistor temperature sensor

The invention discloses a high-sensitivity thermal-response platinum resistor temperature sensor. A thermal conductive metal cap is fixedly embedded at the top end of a metal protecting pipe of the high-sensitivity thermal-response platinum resistor temperature sensor, a platinum resistor inductive core is arranged inside a counter bored hole of the thermal conductive metal cap, a signal transmission cable is in electric connection with the platinum resistor inductive core, transmitting signals are guided out of the metal protecting pipe, thermal-insulating layers are arranged on the internal part of the metal protecting pipe of the thermal conducting inductive cap and outside the counter bored hole of the thermal conducting cap, and the thermal conducting connecting body of the counter bored hole of the thermal conducting cap is linked up with thermal conducting metal points which are embedded in the backside of the insulating substrate of the inductive core of the platinum resistor in a thermal-conducting mode. The high-sensitivity thermal-response platinum resistor temperature sensor improves induction sensitivity of the sensor, shortens thermal response time, and enables the platinum inductive core to be capable of sensing temperature change of environment sensitively and outputting transmission signals of detection.
Owner:丹东鸭绿江敏感元件有限公司

Method for increasing laser thermal response speed and multi-terminal pump solid state laser

The invention relates to a method for increasing the laser thermal response speed and a multi-terminal pump solid state laser. When Q adjusting lasers are needed for laser processing, a Q adjusting switch module is used for conducting laser Q adjusting, at the moment a laser resonant cavity outputs the Q adjusting lasers, and an external modulation optical switch is in a light-transmitting state. When laser processing coordinate positions change and light closing is needed, the Q adjusting switch module does not work or the Q adjusting power is reduced for partial light locking, the external modulation optical switch turns off or attenuates the continuous laser power output by the laser resonant cavity, and then materials to be processed are prevented from being damaged by lasers. When the Q adjusting lasers need to be output again, the external modulation optical switch is in a light-transmitting state, the Q adjusting switch module conducts Q adjusting on the lasers of the laser resonant cavity, and due to the fact that the change of thermal loads of laser crystals is small, the good laser thermal response is acquired. According to the technical scheme, laser processing efficiency is guaranteed while laser thermal response time is shortened, and the method for increasing the laser thermal response speed and the multi-terminal pump solid state laser are very suitable for being widely used in the field of laser processing.
Owner:张立国

Nitrogen dioxide gas sensor based on flower-shaped SnSe2/SnO2 heterojunction, and preparation technology and application of nitrogen dioxide gas sensor

The invention belongs to the technical field of electronic components, and discloses a nitrogen dioxide gas sensor based on a flower-shaped SnSe2/SnO2 heterojunction, and a preparation technology andapplication of the nitrogen dioxide gas sensor. The nitrogen dioxide gas sensor comprises a gas sensitive material and an interdigital electrode plate, and the surface of the interdigital electrode plate is coated with the gas sensitive material, wherein the coating thickness is 1-100 [mu]m; and the gas sensitive material is a flower-shaped SnSe2/SnO2 nano-material. The flower-shaped nano heterojunction is obtained through a hydrothermal method and a thermal oxidation method, raw materials are convenient to obtain, low in cost and simple in preparation process, equipment investment is small, and the process flow is simple. The nitrogen dioxide sensor made of the flower-shaped SnSe2/SnO2 nano-material selects a silicon substrate, the material and silicon-based microelectronics are integrated, and the micro hot plate type nitrogen dioxide gas sensor having the advantages of low heating power consumption, small heat loss, short heat response time, compatibility with a CMOS process, easy integration with other microelectronic devices and the like is prepared.
Owner:DALIAN UNIV OF TECH

Temperature-sensitive pellet type thermal fuse

The present invention provides a temperature-sensitive pellet type thermal fuse, a manufacturing method of the temperature-sensitive pellet type thermal fuse and a mounting method of the temperature-sensitive pellet type thermal fuse which, when the fuse is mounted on a temperature control target object having a planar portion, can ensure a high heat response speed, can decrease the difference in a heat response time for every product, can ensure high operational reliability, reduces the number of parts, and can reduce a manufacturing cost. A temperature-sensitive pellet type thermal fuse includes: an elongated case which has a hollow portion in the inside thereof; a first lead line which is arranged on one longitudinal end portion side of the elongated case along the longitudinal direction; a second lead line which is arranged on the other longitudinal end portion side of the elongated case along the longitudinal direction; and a movable contact which is arranged in the hollow portion and is brought into contact with the second lead line which is always biased in the move-away direction by way of a molten pellet arranged in contact with the first lead line, the movable contact being movable away from the second lead line due to a biasing force when a temperature of a temperature control target object arrives at a predetermined temperature or more and the molten pellet is melted thus cutting off a power source circuit, wherein the elongated case includes a planar portion which is brought into face contact with a planar portion of the temperature control target object.
Owner:THE HOSHO CORP

Junction temperature simulation circuit for semiconductor power devices

The invention discloses a junction temperature simulation circuit for semiconductor power devices. The junction temperature simulation circuit is characterized in that junction temperature rise of the power devices are dynamically simulated by the junction temperature simulation circuit by the aid of integrating voltages on RC (resistance-capacitance) integrators; an RC time constant of the circuit is equal to thermal response time of thermal models; output of voltages of the circuit and junction temperatures of power devices in the thermal models are in simple linear relations with one another; the circuit has an ambient temperature compensation function; electrics-to-thermal simulation can be completed by the circuit in various working modes such as constant-direct-current working modes, single-pulse working modes, repetitive-pulse working modes and optional-waveform working modes; power level cutting and alarm signals can be provided by the circuit under junction temperature over-limit conditions; normal work of power levels can be automatically recovered by the circuit when the normal junction temperatures are recovered. The junction temperature simulation circuit has the advantages that the thermal models of the power devices are simulated by electric models of the integrators by the aid of a principle that charging formulas of RC integrating circuits in the electrics are approximately identical to temperature rise formulas in the thermal physics, and accordingly real-time junction temperature information of the power devices can be obtained.
Owner:BEIJING HUAFENG TEST & CONTROL TECH CO LTD +1

MEMS sensor thermal parameter testing circuit and testing method

The invention relates to an electricity self-testing field of the thermal parameter of the micro-nano device, and specifically relates to a MEMS sensor thermal parameter testing circuit and a testingmethod. The MEMS sensor thermal parameter testing circuit comprises a MEMS sensor array including multiple lines and multiple rows of sensitive units, wherein each sensitive unit can self-heat after being electrified and produce an electricity signal corresponding to the temperature thereof; an array gating switch for orderly gating the sensitive units in the MEMS sensor array in turn, and outputting the electricity signal produced by the selected sensitive unit to an operational circuit; the operational circuit for performing amplifying operation on the change of the electricity signal, and outputting the amplifying operation result to a data processing module; a power supply module for supplying power for the sensitive unit selected by the array gating switch; and the data processing unit for computing according to the actual testing data of the operational circuit so as to obtain device thermal capacity C, thermal response time t and thermal conductance G. The testing circuit disclosed by the invention has the features of being simple in circuit, simple and convenient to operate, fast in measurement speed and high in precision.
Owner:WUXI INNOVATION CENT CO LTD

Infrared detector and preparation method thereof

The invention relates to an infrared detector and a preparation method thereof. The infrared detector comprises a substrate, a thermosensitive layer, a dielectric layer, an electrode layer and a passivation layer, wherein the thermosensitive layer, the dielectric layer, the electrode layer and the passivation layer are located on the substrate, the dielectric layer is located between the thermosensitive layer and the electrode layer, the thermosensitive layer is located on one side, close to the substrate, of the dielectric layer, and the passivation layer is located on one side, away from the substrate, of the electrode layer. The infrared detector comprises a plurality of infrared detector pixels arranged in a matrix, each infrared detector pixel comprises an absorption plate structure, at least two micro-bridge columns and at least two beam structures, and the absorption plate structures are connected to the corresponding micro-bridge columns through the corresponding beam structures; the thermosensitive layer covers the area where the absorption plate structure and the beam structure are located, and the passivation layer covers the area where the absorption plate structure and the beam structure are located; and the material for forming the thermosensitive layer comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium. According to the technical scheme, the thermal response time of the infrared detector is shortened, and the infrared response rate of the infrared detector is improved.
Owner:BEIJING NORTH GAOYE TECH CO LTD

Wear-resistant quick temperature measuring platinum resistance thermometer

The invention discloses a wear-resistance quick temperature measuring platinum resistance thermometer, which comprises a wear-resistant protecting tube and a platinum resistance thermometer arranged in the protecting tube, and is characterized in that: in the protecting tube, a quick heat conducting body connected with the platinum resistance thermometer is arranged at the temperature sensing end; the platinum resistance thermometer is tightly matched with the inner wall of the protecting tube; and a heat conducting material is filled in small gaps between the platinum resistance thermometer and the inner wall of the protecting tube. The wear-resistance quick temperature measuring platinum resistance thermometer has the advantages that: by selecting the material of the protecting tube and the platinum resistance thermometer, the wear resistance and corrosion resistance are improved by more than three times compared with those of the conventional wear-resistant protecting tube; and the platinum resistance thermometer is tightly matched with the protecting tube, the heat conducting material is filled in the gaps, and the quick heat conducting body is arranged at the temperature sensing end (heat end) of the protecting tube, so that the heat conductivity is improved by 8 times. The wear-resistance quick temperature measuring platinum resistance thermometer has a compact structure, has the thermal response time of less than 5 seconds, meets the performance requirements for corrosion resistance and wear resistance in the tyre rubber vulcanizing process, improves the effect of quickly and accurately measuring temperature of a temperature sensor, is convenient and practical to use, and has obvious effect.
Owner:上海岗崎控制仪表有限公司

MEMS uncooled infrared detector thermal parameter test circuit and test method

The invention relates to the field of electrical self-testing of thermal parameters of infrared detectors, in particular to an MEMS uncooled infrared detector thermal parameter test circuit and test method. The MEMS uncooled infrared detector thermal parameter test circuit comprises: an MEMS uncooled infrared detector array which comprises a plurality of rows and columns of infrared sensitive units; an array gating switch used for gating the sensitive units in the MEMS uncooled infrared detector array in turn and outputting electrical signals generated by the selected sensitive units to an amplification operational circuit; the amplification operational circuit is used for carrying out amplification operation on the change of the electrical signal and outputting an amplification operationresult to a data processing module; a power supply module used for supplying power to the infrared sensitive unit selected by the array gating switch; and the data processing module used for calculating to obtain a heat capacity C, a thermal response time [tau], a thermal conductivity G, a blackbody response rate RIR and an infrared absorption efficiency [eta] of the device according to the actualtest data of the amplification operational circuit.
Owner:WUXI INNOVATION CENT CO LTD

Device and method for measuring thermal response time of temperature sensor

ActiveCN110057472AAccurate Thermal Response TimePrecise determination of thermal response timesThermometer testing/calibrationMeasurement deviceEngineering
The invention discloses a device and a method for measuring thermal response time of a temperature sensor. The device comprises a constant-temperature constant-speed water tank, a support frame, a mechanical arm and a recorder, wherein a support frame is sleeved above the constant-temperature constant-speed water tank; the mechanical arm is arranged on the support frame; the temperature sensor isinstalled at the bottom of the mechanical arm, and the temperature sensor passes through the lead-out wire and is connected with the recorder; the constant-temperature constant-speed water tank comprises a cylinder body, a heating coil and a heat preservation layer, wherein the heating coil is tightly attached to the outer wall of the cylinder body and is wrapped by the heat-insulating layer; a first lead and a second lead are arranged on a trigger channel of the recorder, the first lead is arranged in the constant-temperature constant-speed water tank, and the second lead is connected with ameasuring end of the measured temperature sensor; and the device and the method for measuring thermal response time of the temperature sensor can obtain accurate thermal response time of the temperature sensor in lower time resolution of the recorder and shorter temperature step time.
Owner:SHANGHAI INST OF MEASUREMENT & TESTING TECH
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