MEMS uncooled infrared detector thermal parameter test circuit and test method

An uncooled infrared and parameter testing technology, which is applied to electric radiation detectors, radiation pyrometry, instruments, etc., can solve the problems of inconvenient operation, large error, and high cost of testing time, and achieve high efficiency, fast speed, and control Timing requires simple effects

Active Publication Date: 2019-10-18
WUXI INNOVATION CENT CO LTD
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the determination of structure and process size for thermal parameter design mainly relies on rough design methods such as simulation and estimation, which have large errors and long design cycles
However, domestic testing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MEMS uncooled infrared detector thermal parameter test circuit and test method
  • MEMS uncooled infrared detector thermal parameter test circuit and test method
  • MEMS uncooled infrared detector thermal parameter test circuit and test method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0043] As a first aspect of the present invention, a kind of MEMS uncooled infrared detector thermal parameter testing circuit based on self-heating effect is provided, such as figure 1 and figure 2 Shown is a thermal parameter test circuit of an uncooled infrared detector array.

[0044] Described MEMS uncooled infrared detector thermal parameter testing circuit comprises: black body radiation source, chopper, power supply module, MEMS uncooled outer focal plane array, array gating switch, amplifying operation circuit and data processing module;

[0045] The light radiated by the black body is irradiated on the MEMS uncooled external focal plane array through a chopper, and the chopper is used to control the light radiated by the black body to reach the MEMS uncooled external focal plane array.

[0046]Described MEMS uncooled infrared detector comprises the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the field of electrical self-testing of thermal parameters of infrared detectors, in particular to an MEMS uncooled infrared detector thermal parameter test circuit and test method. The MEMS uncooled infrared detector thermal parameter test circuit comprises: an MEMS uncooled infrared detector array which comprises a plurality of rows and columns of infrared sensitive units; an array gating switch used for gating the sensitive units in the MEMS uncooled infrared detector array in turn and outputting electrical signals generated by the selected sensitive units to an amplification operational circuit; the amplification operational circuit is used for carrying out amplification operation on the change of the electrical signal and outputting an amplification operationresult to a data processing module; a power supply module used for supplying power to the infrared sensitive unit selected by the array gating switch; and the data processing module used for calculating to obtain a heat capacity C, a thermal response time [tau], a thermal conductivity G, a blackbody response rate RIR and an infrared absorption efficiency [eta] of the device according to the actualtest data of the amplification operational circuit.

Description

technical field [0001] The invention relates to the field of electrical self-testing of thermal parameters of micro-nano devices, in particular to a test circuit and method for thermal parameters of MEMS uncooled infrared detectors based on self-heating effects. Background technique [0002] Micro-electromechanical systems (MEMS), also known as micro-electro-mechanical systems or micro-mechanical systems, are developed on the basis of microelectronics technology (semiconductor manufacturing technology). Common products include accelerometers, microphones, gyroscopes, humidity sensors, gas sensors, infrared detectors, and more. At present, thermal MEMS sensors based on the principle of thermal characteristics are widely used in national defense, medical, security, aerospace, environmental monitoring, automotive electronics and other fields, and have the characteristics of miniaturization, intelligence, multi-function, high integration and mass production. [0003] Infrared r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01J5/20G01J5/24
CPCG01J5/20G01J5/24G01J2005/204G01J5/80
Inventor 刘超傅剑宇刘瑞文侯影陈大鹏
Owner WUXI INNOVATION CENT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap