A kind of infrared detector and preparation method thereof

Abstract

The present disclosure relates to an infrared detector and a preparation method thereof. The infrared detector includes a substrate, a dielectric layer, an electrode layer and a thermosensitive layer on the substrate. The electrode layer is located between the dielectric layer and the thermosensitive layer, and the dielectric layer is located on the substrate. The electrode layer is adjacent to one side of the substrate, and the electrode layer is arranged in contact with the thermosensitive layer; the infrared detector includes a plurality of infrared detector pixels arranged in a matrix, and the infrared detector pixels include an absorption plate structure, at least two micro-bridge columns and At least two beam structures, the absorption plate structure is connected to the corresponding micro-bridge column through the corresponding beam structure; the heat-sensitive layer covers the area where the absorption plate structure and the beam structure are located; wherein, the materials constituting the heat-sensitive layer include amorphous silicon, amorphous One or more of carbon, amorphous germanium or amorphous silicon germanium; the material constituting the electrode layer at least includes titanium. Through the technical solution of the present disclosure, the thermal response time of the infrared detector is reduced, and the infrared response rate of the infrared detector is improved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, and in particular, to an infrared detector and a preparation method thereof. Background technique [0002] Non-contact infrared detectors include, for example, non-contact temperature sensors. The detection principle is that the infrared detector converts the infrared radiation signal emitted by the target object to be measured into a thermal signal, and the thermal signal is converted into an electrical signal through the detector sensitive element, and then the thermal signal is converted into an electrical signal. The electrical signal is processed and output by the circuit chip, and the infrared detector thus realizes the infrared detection function. [0003] The infrared detector includes the absorption plate structure and the beam structure. The performance of the absorption plate structure and the beam structure directly affects the thermal response performance and dete...

AI Technical Summary

Problems solved by technology

[0003] The infrared detector includes an absorbing plate structure and a beam structure. The performance of the absorbing plate structure and the beam structure directly affects the thermal response performance and detection performance of the infrared detector. Generally, a separate passivation layer needs to be made for the absorbing plate structure of the infrared detector. In order to protect the electrode layer in the absorbing plate structure from being oxidized or corroded, but the setting of the passivation film layer will cause the thickness of the absorbing plate structure of the infrared detector to increase, which will lead to the increase of the thermal response time of the infrared detector and affect the performance of the infrared detector. Infrared Detection Performance

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