A kind of infrared detector and preparation method thereof

Abstract

The present disclosure relates to an infrared detector and a preparation method thereof. The infrared detector includes a substrate, a thermosensitive layer on the substrate, a dielectric layer, an electrode layer and a passivation layer, and the dielectric layer is located between the thermosensitive layer and the electrode layer. , the heat-sensitive layer is located on the side of the dielectric layer close to the substrate, and the passivation layer is located on the side of the electrode layer away from the substrate; the infrared detector includes a plurality of infrared detector pixels arranged in a matrix, and the infrared detector pixel includes an absorbing plate Structure, at least two micro-bridge columns and at least two beam structures, the absorbing plate structure is connected to the corresponding micro-bridge column through the corresponding beam structure; the heat-sensitive layer covers the area where the absorbing plate structure and the beam structure are located; wherein, the heat-sensitive layer is formed The material includes one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium; the passivation layer covers the area where the absorber plate structure is located; wherein, the material constituting the electrode layer includes at least titanium-tungsten alloy. Through the technical scheme disclosed in the present disclosure, the infrared responsivity of the infrared detector is improved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an infrared detector and a preparation method thereof. Background technique [0002] Non-contact infrared detectors include, for example, non-contact temperature measurement sensors. The detection principle is that the infrared detector converts the infrared radiation signal emitted by the target object to be measured into a heat signal, and converts the heat signal into an electrical signal through the detector sensitive element, and then The electrical signal is processed and output by the circuit chip, and the infrared detector thus realizes the infrared detection function. [0003] The infrared detector includes an absorbing plate structure and a beam structure. The performance of the absorbing plate structure and the beam structure directly affects the thermal response performance and detection performance of the infrared detector. Generally, the absorbin...

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Problems solved by technology

[0003] The infrared detector includes an absorbing plate structure and a beam structure. The performance of the absorbing plate structure and the beam structure directly affects the thermal response performance and detection performance of the infrared detector. Generally, the absorbing plate structure corresponding to the infrared detector needs to make a separate supporting film layer. To support the absorbing plate structure after the infrared detector releases the sacrificial layer, but the setting of the supporting film layer will lead to an increase in the thickness of the infrared detector absorbing plate structure, which will lead to an increase in the thermal response time of the infrared detector and affect the infrared detection of the infrared detector. performance

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