53results about How to "Improve electrical uniformity" patented technology

The invention discloses a preparation method and application of a monocrystalline silicon sheet. A monocrystalline silicon rod can be cut to be a strip-shaped right-angle silicon monocrystalline sheetand a monocrystalline silicon quasi square sheet or the strip-shaped right-angle silicon monocrystalline sheet and monocrystalline silicon square sheet, and the using ratio of the monocrystalline silicon rod can be increased.

The invention discloses an active layer, a film transistor, an array substrate, a display device and preparation methods, and belongs to the field of the panel display. The material of the active layer is zirconium oxide indium, and the chemical formula of the zirconium oxide indium is ZrxIn100-xOy, wherein 0.1<=x<=20, and y>0. By adopting the active layer provided by the invention, various structure types such as the film transistor of a bottom gate intersection structure can be prepared by full direct current sputtering, high carrier mobility and high electricity homogeneity of the obtained film transistor are ensured, and thickness controllability of a gate insulation layer can be ensured.

A display panel comprises a substrate having a displaying region (such as active organic light emitting region) and a circuit driving region; and a polysilicon layer formed on the substrate and having a first polysilicon portion and a second polysilicon portion respectively corresponding to the displaying region and circuit driving region, wherein the grain size of the second polysilicon portion crystallized by continuous wave (CW) laser annealing method is larger than that of the first polysilicon portion crystallized by excimer laser annealing (ELA) method.

The invention discloses a manufacture method of a metal-multilayer insulator-metal capacitor. The manufacture method comprises the following steps of: providing a substrate; depositing a low-dielectric-constant dielectric layer on the substrate; forming a hole in the low-dielectric-constant dielectric layer; depositing silicon nitride in the hole via the way of circularly depositing and processing oxygen-containing gas to form a mixing layer of the silicon nitride and the low-dielectric-constant dielectric layer; etching a silicon nitride layer to form a first metallic channel in the silicon nitride layer, and thinning the silicon nitride layer; depositing silicon oxide in the hole via the way of circularly depositing and processing the oxygen-containing gas, and etching the silicon oxide layer to remove the silicon oxide along horizontal direction; etching the low-dielectric-constant dielectric layer to form a second metallic channel; and performing metal filling to the first metallic channel and the second metallic channel. The invention effectively improves the capacitance of the capacitor in the layer, improves the electrical characteristics of the capacitor, such as breakdown voltage, leakage current and the like, and improves the electrical uniformity among all elements.

The invention provides a deformable reflecting membrane for a reconfigurable reflector and an antenna having the same. The deformable reflecting membrane (5) comprises a conductive elastomer layer (10) and at least two reinforcing layer (11) which are intermeshed in a thickness direction. Each reinforcing layer is divided in a manner of being separated from each other in terms of space. Independent fragments are disposed on the plane of the membrane in a periodical manner. The invention is especially suitable for space area.

The invention discloses a water-blocking expansion type semi-conductive nylon tape for an ultrahigh-voltage cable and a preparation method thereof. The preparation method comprises the following steps that S1, mixed weaving is carried out on metal wires and cellosilk to obtain base cloth; S2, an alcohol diluent, a dispersant, water-absorbent resin, conductive carbon black and an emulsion are uniformly mixed to prepare a water-blocking conductive liquid; and S3, the base cloth obtained in the step S1 is uniformly coated with the water-blocking conductive liquid obtained in the step S2, and then drying is carried out to obtain the water-blocking expansion type semi-conductive nylon tape. The base cloth is formed by blending the metal wires and the cellosilk, the metal wires effectively reduce the surface resistance and the volume resistance of the base cloth, and the semi-conductive performance is improved; and the water-blocking and conductive liquid is prepared by synchronously and uniformly mixing a water-absorbing material and a conductive material with the alcohol diluent, the alcohol diluent and the water-absorbing resin do not absorb, expand and react, so that the serious defects caused when water is used as the diluent in the traditional process are overcome, the prepared water-blocking and conductive liquid can endow the base cloth with semi-conductive performance and water-blocking performance at one time, working procedures are effectively reduced, production power consumption is reduced, and energy conservation and environmental protection are achieved.

The invention provides a method for producing a multilayer metal-silicon nitride-metal capacitor, which includes the following steps: 1) using a plasma enhanced chemical vapor deposition (PECVD) method to deposit a silicon nitride thin film with a high k value on a silicon chip substrate; 2) removing silicon nitride in a non-metal-oxide-metal area through photoetching and etching; 3) depositing a dielectric layer with a low k value; 4) removing redundant silicon nitride through chemical mechanical polishing, and forming a mixing layer of low-k-value dielectric and silicon nitride; 5) completing photoetching and etching to form a metallic channel in the low-k-value dielectric and the silicon nitride; 6) forming metal fillers of a lead and a metal-oxide-metal (MOM) capacitor after deposition and chemical mechanical polishing of a metal layer are completed; and 7) repeating Step 1) to Step 6) to form multilayer MOM capacitor. The method for producing the multilayer metal-silicon nitride-metal capacitor can effectively improve the capacitance of the interlayer capacitor, can also effectively improve various electric characteristics of the MOM capacitor such as breakdown voltage, leakage current and the like, can effectively improve electric uniformity among various apparatuses, and is very practical.

The invention provides a manufacturing method for a nitride light emitting diode. The method comprises: using a PVD method to deposit an AIN film layer on a patterned substrate with larger depth, using a CVD method to deposit a nitride epitaxial layer on the AIN film layer, the thickness of the nitride epitaxial layer being relatively thin, through reducing the little stress of the epitaxial layer, improving warping of an epitaxial wafer, so as to improve electrical property uniformity of a single epitaxial wafer; using the patterned substrate with larger depth to improve light extraction efficiency; and mixing high density impurity in an active layer, under the condition of not influencing leakage, the impurity effectively reducing voltage feature, so as to improve integrated yield of the light emitting diode.

The invention discloses a method for preparing a silicon carbide single crystal based on a controllable growth center, belonging to the field of crystal growth. The present invention adjusts the transmission direction of the growth component flow and the flow density of the transport component by placing a deflected growth component flow guiding device in the powder and the growth chamber, preferentially forming a long and narrow growth center facet and keeping it at the edge of the growth surface Position, so that a balanced step flow growth mode can be maintained within the required single crystal diameter, and the crystal form of the seed crystal can be completely maintained, and finally a high-quality silicon carbide crystal with a single crystal form can be obtained. The high-quality silicon carbide single crystal prepared by the method of the present invention can be widely used in power electronics fields such as new energy electric vehicles, locomotive traction, industrial automation, uninterruptible power supplies, high-power charging piles, and energy Internet.

The invention relates to a photovoltaic solar cell and discloses a flexible substrate silicon-based multi-junction laminated thin-film solar battery. The flexible substrate silicon-based multi-junction laminated thin-film solar battery comprises a back reflection electrode, microcrystalline silicon (muc-Si:H) or amorphous silicon germanium (a-SiGe:H) bottom battery, an amorphous silicon (a-Si:H) top battery, a transparent conducting film and a metal grid line which are sequentially deposited on a metal foil or polyester film substrate, wherein the bottom battery is electrically connected with the top battery by adopting a composite tunneling junction. The invention also discloses a manufacturing method for the battery. The manufacturing method comprises the following steps of: carrying out sputtering deposition on the back reflection electrode; depositing microcrystalline silicon or amorphous silicon germanium bottom battery; depositing the amorphous silicon top battery; carrying out sputtering deposition on transparent conducting films such as ITO (Indium Tin Oxide), SnO2.F, ZnO:Al, ZnO:Ga and the like; carrying out electro chemical passivation; preparing the metal grid line and the like. The flexible substrate silicon-based multi-junction laminated thin-film solar battery disclosed by the invention has the beneficial effects that the conversion efficiency of the battery and the large-area uniformity are increased, high efficiency and high power specific weight ratio are obtained and the like; and meanwhile, a preparation process is simple and the scale production can be realized.

The invention discloses a method for preparing a single crystal silicon wafer, which can cut a single crystal silicon rod into a strip-shaped right-angle single crystal silicon wafer and a single-crystal silicon quasi-square sheet, or cut a single crystal silicon rod into a strip-shaped right-angle single Crystal silicon wafers and monocrystalline silicon square wafers can improve the utilization rate of monocrystalline silicon rods.

The invention provides a method for manufacturing a multilayer metal-silicon oxide-metal (MOM) capacitor. The method has the following beneficial effects: the multilayer MOM capacitor is formed by forming a mixed layer of a low-k dielectric and high-k silicon oxide, then utilizing the traditional photoetching and etching processes to form metal grooves in the low-k dielectric and silicon oxide respectively and filling metals into the metal grooves and repeating the previous steps; the MOM capacitor structure is realized in the high-k silicon oxide region and interconnection of the low-k dielectric is realized in other regions; and high-k silicon oxide is formed by circularly carrying out plasma enhanced chemical vapor deposition (PECVD) and oxygen-containing gas treatment so that the silicon-hydrogen bonds in silicon oxide can be effectively removed. Compared with the traditional single k dielectric structure, the method has the following advantages: not only can the capacitance of the capacitor in the layer be effectively improved, but also the electrical characteristics of the MOM capacitor such as breakdown voltage, leakage current and the like and the electrical uniformity among the components are improved.

The invention discloses a metal-multilayer insulator-metal capacitor as well as a preparation method and an integrated circuit thereof. The preparation method of the metal-multilayer insulator-metal capacitor disclosed by the invention comprises a dielectric layer providing step used for providing a dielectric layer, a capacitor slot forming step used for forming a capacitor slot of a capacitor in the dielectric layer, a capacitor slot filling step used for filling the capacitor slot with silicon nitride, a capacitor pattern forming step used for patterning the filled silicon nitride so as to form a plurality of silicon nitride pillars, a silicon nitride depositing step used for depositing the silicon nitride on the side walls of the silicon nitride pillars, and a metal filling step used for filling the concave parts in the patterned silicon nitride with metal. According to the invention, the capacitance between the layers and capacitance of the capacitor in the layers can be effectively enhanced, and the electrical characteristics, such as breakdown voltage, leakage current and the like of the metal-multilayer insulator-metal capacitor and the electrical uniformity among devices can be improved.

The invention provides a method for manufacturing a multilayer metal-oxide-metal (MOM) capacitor. The method comprises the following steps of: forming a mixed layer of a low-k-value medium and high-k-value silicon oxide; forming a metallic groove in the low-k-value medium by using photolithographic etching of the conventional process, and filling a metal into the metal groove; repeating the above steps; and thus, obtaining the multilayer metal-oxide-metal capacitor. An MOM capacitor structure is realized in a high-k-value silicon oxide area, and the interconnection of the low-k-value media is realized in another area; the high-k-value silicon oxide is formed in a mode of plasma enhanced chemical vapor deposition (PECVD) and oxygen-containing gas processing circulation; and silicon-hydrogen bonds in the silicon oxide can be effectively removed. Compared with the conventional single-k-value medium structure, the method can improve the capacitance of an in-layer capacitor effectively, and improve the electrical characteristics such as breakdown voltage, leakage current and the like of the MOM capacitor, and the electrical uniformity between devices.

The invention discloses a forming method of a silicon nitride film, comprising the steps: providing a substrate; depositing the silicon nitride film on the substrate, and processing the silicon nitride film by oxygen-containing gas. The invention also correspondingly discloses a forming method of an MIM capacitor by utilizing the forming method of the silicon nitride film. The silicon nitride filmformed by the method has less quantity of electric charge, so the evenness of the electrogenicity thickness and the physical thickness of the silicon nitride film are enhanced. The MIM capacitor formed by the method has the advantages that not only the electrical characteristics of puncturing voltages and leakage current, and the like are improved but also electricity evenness among components isenhanced.

The invention provides a method for producing a multilayer metal-silicon nitride-metal capacitor, which includes the following steps: 1) using a plasma enhanced chemical vapor deposition (PECVD) method to deposit a silicon nitride thin film with a high k value on a silicon chip substrate; 2) removing silicon nitride in a non-metal-oxide-metal area through photoetching and etching; 3) depositing a dielectric layer with a low k value; 4) removing redundant silicon nitride through chemical mechanical polishing, and forming a mixing layer of low-k-value dielectric and silicon nitride; 5) completing photoetching and etching to form a metallic channel in the low-k-value dielectric and the silicon nitride; 6) forming metal fillers of a lead and a metal-oxide-metal (MOM) capacitor after deposition and chemical mechanical polishing of a metal layer are completed; and 7) repeating Step 1) to Step 6) to form multilayer MOM capacitor. The method for producing the multilayer metal-silicon nitride-metal capacitor can effectively improve the capacitance of the interlayer capacitor, can also effectively improve various electric characteristics of the MOM capacitor such as breakdown voltage, leakage current and the like, can effectively improve electric uniformity among various apparatuses, and is very practical.

The invention discloses a ceramic material with high electric energy storage efficiency and a preparation method thereof, belongs to the technical field of electronic ceramic materials, overcomes the problems of low electric energy storage efficiency and serious energy waste of energy storage ceramics in the prior art, and the prepared product electric energy High storage efficiency, chemical uniformity and good electrical stability. The electronic ceramic material chemical composition of the present invention is (1-x) ((1-y) BaTiO 3 -y(Bi 0.5 Na 0.5 )TiO 3 )‑xSr(Sc 0.5 Nb 0.5 )O 3 , where x is 0.05‑0.15 and y is 0.35. The product of the invention has high repeatability, uniform internal grain size, high chemical uniformity and electrical uniformity, and exhibits high energy storage efficiency. The energy storage ceramic material prepared by the present invention has a maximum energy storage efficiency of 91% and an energy storage density of 1.63 J / cm³ when the applied electric field strength is 175 kV / cm3. The energy storage ceramic material prepared by the invention can be applied to high-power and high-stability electronic pulse components, and has great practical value and economic value.

Described herein is a gated bipolar semiconductor device comprising a collector region (104) of a first conductivity type, a drift region (106, 108) of a second conductivity type over the collector region, a body region (110) of the first conductivity type over the drift region, a body region (112) of the second conductivity type over the drift region, at least one first contact region of a second conductivity type over the body region and having a higher doping concentration than the body region, at least one second contact region (116) of the first conductivity type laterally adjacent to the at least one first contact region, the at least one second contact region has a higher doping concentration than the body region, at least one active trench (124) extending from the surface into the drift region wherein the at least one first contact region adjoins the at least one active trench such that, in use, a channel region is formed along the at least one active trench and within the body region, and at least two auxiliary trenches (118) extending from the surface into the drift region. The at least two auxiliary trenches each include an insulating layer (122) along the vertical sidewalls and the bottom surface. A thickness of the insulating layer along two vertical sidewalls of the at least two auxiliary trenches is less than 1500 A. The body region of the first conductivity type and the body region of the second conductivity type are both at least located between two adjacent auxiliary trenches. Possibly, the device further includes a transmitter trench (336) located between the two active trenches (124) and recessed from the top surface.