Manufacture method of metal-silicon oxide-metal capacitor

Abstract

The invention discloses a manufacture method of a metal-silicon oxide-metal capacitor. The manufacture method comprises the following steps of: providing a substrate; depositing a first low-dielectric-constant dielectric layer on the substrate, wherein the first low-dielectric-constant dielectric layer comprises a metal-oxide-metal manufacture area and a nonmetal-oxide-metal manufacture area; depositing a silicon oxide layer on the first low-dielectric-constant dielectric layer via the way of circularly depositing and processing oxygen-containing gas, wherein the silicon oxide layer comprises the first silicon oxide layer of the metal-oxide-metal manufacture area and the second silicon oxide layer of the nonmetal-oxide-metal manufacture area; etching the second silicon oxide layer; depositing a second low-dielectric-constant dielectric layer on the nonmetal-oxide-metal manufacture area; etching the first silicon oxide layer to form a first metallic channel, and etching the second low-dielectric-constant dielectric layer to form a second metallic channel; and performing a metal filling process to the first metallic channel and the second metallic channel. The invention improves the electrical characteristics and the electrical uniformity of the capacitor.

Description

technical field [0001] The invention relates to the field of microelectronics, in particular to a method for manufacturing a metal-silicon oxide-metal capacitor. Background technique [0002] Capacitors are important components in integrated circuits and are widely used in memory, microwave, radio frequency, smart card, high voltage and filter chips. A widely used capacitor configuration in chips is metal-insulator-metal (MIM) parallel to the silicon substrate. Among them, the metal is copper, aluminum, etc., whose manufacturing process is easily compatible with the metal interconnection process, and the insulator is a dielectric material with a high dielectric constant (k) such as silicon nitride and silicon oxide. Improving the properties of high-k dielectric materials is one of the main methods to improve capacitor performance. [0003] Plasma Enhanced Chemical Vapor Deposition (PECVD, Plasma Enhanced Chemical Vapor Deposition) is widely used for thin film deposition in...

AI Technical Summary

Problems solved by technology

For example, using the PEVCD method, the silicon oxide film is formed by the reaction of silane and nitrous oxide. However, a large number of silicon-hydrogen bonds (Si-H) remain in the silicon oxide film produced by the PECVD method, so that there are more charges in it. This leads to poor uniformity of the silicon nitride film in terms of electrical thickness, and correspondingly poor electrical characteristics such as breakdown voltage and leakage current of the MIM capacitor made of the silicon oxide film.

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