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Forming methods of silicon nitride film and MIM capacitor

A silicon nitride film and capacitor technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid devices, etc., can solve the problems of limited improvement of capacitor electrical characteristics and complicated methods, and achieve improved electrical thickness uniformity and electrical uniformity The effects of improved performance and improved leakage current

Active Publication Date: 2011-07-06
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method is more complicated and may cause other problems. In fact, the improvement effect on the electrical characteristics of the capacitor is limited.

Method used

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  • Forming methods of silicon nitride film and MIM capacitor
  • Forming methods of silicon nitride film and MIM capacitor
  • Forming methods of silicon nitride film and MIM capacitor

Examples

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no. 1 example

[0074] The first embodiment of the present invention introduces a new method for forming a silicon nitride film, figure 2 It is a flow chart of the method for forming a silicon nitride film in the first embodiment of the present invention, combined below figure 2 The first embodiment of the present invention will be described in detail.

[0075] Step 201: providing a substrate.

[0076] The substrate provided in this embodiment may be a simple silicon substrate, or a silicon substrate on which metal oxide semiconductor transistors have been formed, or a substrate on which an underlying metal wiring structure has been formed.

[0077] Step 202: Deposit a silicon nitride film on the substrate.

[0078] In this embodiment, in order to reduce the thermal budget in the manufacturing process, the deposition process in this step adopts the plasma enhanced chemical vapor deposition method (PECVD, Plasma Enhanced Chemical Vapor Deposition), using silane (SiH 4 ) and ammonia (NH 3...

no. 2 example

[0089] The second embodiment of the present invention introduces a new method for forming a MIM capacitor, image 3 It is a flowchart of a method for forming a MIM capacitor according to the second embodiment of the present invention, Figure 4 to Figure 8 In order to illustrate the cross-sectional view of the device of the MIM capacitance forming method of the second embodiment of the present invention, below in conjunction with Figure 3 to Figure 8 The second embodiment of the present invention will be described in detail.

[0090] Step 301: Provide a substrate.

[0091] The substrate provided in this embodiment may be a silicon substrate on which a metal oxide semiconductor transistor has been formed, or a substrate on which an underlying metal wiring structure has been formed.

[0092] In other embodiments of the present invention, semiconductor substrates of other materials may also be used, such as germanium substrates, gallium arsenide substrates, and the like.

[0...

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Abstract

The invention discloses a forming method of a silicon nitride film, comprising the steps: providing a substrate; depositing the silicon nitride film on the substrate, and processing the silicon nitride film by oxygen-containing gas. The invention also correspondingly discloses a forming method of an MIM capacitor by utilizing the forming method of the silicon nitride film. The silicon nitride filmformed by the method has less quantity of electric charge, so the evenness of the electrogenicity thickness and the physical thickness of the silicon nitride film are enhanced. The MIM capacitor formed by the method has the advantages that not only the electrical characteristics of puncturing voltages and leakage current, and the like are improved but also electricity evenness among components isenhanced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a silicon nitride film and an MIM capacitor. Background technique [0002] The integrated circuit manufacturing process is a planar manufacturing process that combines photolithography, etching, deposition, ion implantation and other processes to form a large number of various types of complex devices on the same substrate and connect them to each other to have a complete electronic functions. Among them, capacitors are electronic components commonly used in integrated circuit technology, and can be widely used in circuits such as couplers, filters, and oscillators. [0003] Among existing integrated circuit capacitors, metal-insulator-metal (MIM, Metal-insulator-metal) capacitors have gradually become mainstream in radio frequency integrated circuits. The reason is that it is usually made in the metal interconnection layer, which is com...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/318H01L21/3105H01L21/02
Inventor 邹晓东蔡明徐强
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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