Production method of metal-silicon nitride-metal capacitor

Abstract

The invention provides a production method of a metal-silicon nitride-metal capacitor, which comprises the steps of: 1) depositing a low-k-value dielectric layer; 2) forming a metal-oxide-metal (MOM) area through photoetching and etching; 3) depositing high-k-value silicon nitride through a plasma enhanced chemical vapor deposition (PECVD) method; 4) removing excessive silicon nitride through chemical and mechanical grinding to form a low-k-value dielectric and silicon nitride mixed layer; 5) completing photoetching and etching to form a metal groove on the low-k-value dielectric and silicon nitride; 6) completing the deposition and the chemical and mechanical grinding of the metal layer and then forming the metal fillers of a conducting wire and an MOM capacitor; and 7) completing copper interconnection and the production of the MOM capacitor. By improving the k value of the dielectric of the inter-layer capacitor, the capacitance of the inter-layer capacitor is effectively improved. By improving the performance of the high-k-value silicon nitride, the electric properties such as the puncture voltage, the leakage current and the like of the MOM capacitor and the electric uniformity of devices are effectively improved. The production method is very practical.

Description

technical field [0001] The invention relates to a method for manufacturing a capacitor in semiconductor integrated circuit manufacturing, in particular to a method for manufacturing a metal-silicon nitride-metal capacitor. Background technique [0002] With the trend of applying standard complementary metal-oxide-semiconductor (CMOS) technology to analog and radio-frequency complementary metal-oxide-semiconductor (RFCMOS) integrated circuits, more and more passive components have emerged. Capacitors are important components in integrated circuits and are widely used in memory, microwave, radio frequency, smart card, high voltage and filter chips. A widely used capacitor configuration in chips is metal-insulator-metal (MIM) parallel to the silicon substrate. Among them, the metal is copper, aluminum, etc., whose manufacturing process is easily compatible with the metal interconnection process, and the insulator is a dielectric material with a high dielectric constant (k) suc...

AI Technical Summary

Problems solved by technology

However, although the structure is simple, the formation of multilayer MIM capacitors often requires many additional process steps, which increases the burden on many manufacturing costs.

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