2results about How to "Increase K value" patented technology

A reduction-resistant microwave temperature-stabilized ceramic capacitor, its ceramic dielectric material, and its preparation method are disclosed. The ceramic dielectric material is composed of 100 moles of Ba. x Sr 1‑x Mo 1‑y W y Using O4 as a base material, the following components are added in molar amounts: 4-8 parts of CaRe4(MoO4)6, 2-5 parts of BiYMoO6, 0.5-1.0 parts of MgAl₂O₄, 0.2-0.8 parts of ZrSiO₄, and 1-3 parts of Na₂B₂O₇, wherein 0 < x < 0.15, 0 < y < 0.10, and Re = La, Nd, Ce; This invention uses Ba x Sr 1‑x Mo 1‑y W y Using O4 as the base material, CaRe4(MoO4)6 and BiYMoO6 synthesized by solid-state method were added to improve its dielectric constant and adjust the temperature coefficient of capacitance. Spinel MgAl2O4 and zircon ZrSiO4 were used to improve the dielectric material's resistance to reduction under N2 / H2 atmosphere, and borax Na2B2O7 was added to lower its densification temperature. The resulting ceramic dielectric has a dielectric constant of [missing information]. e r With a temperature >80 and a densification temperature between 1150 and 1250°C, it is suitable for use as a reduction-resistant microwave temperature-stabilized ceramic capacitor with nickel as the internal electrode.

The invention belongs to the technical field of semiconductors, and particularly relates to a hafnium compound, a precursor composition containing the hafnium compound, a thin film and a preparation method of the hafnium compound. The hafnium compound contains phosphorus and silicon and can be used as a precursor of a hafnium oxide film. The doping of phosphorus and silicon can effectively inhibit the growth of hafnium oxide grains at high temperature. And the hafnium is segregated at the grain boundary of hafnium oxide, so that the uniformity of the film is higher. Meanwhile, oxygen vacancy and lattice strain are introduced by doping phosphorus, so that the formation of a monoclinic phase with a low K value is inhibited, and the film can be kept at a relatively high K value; according to the present invention, the Si-O bond is connected with the Hf-O bond to form a mixed and randomly connected Si-O-Hf amorphous network, such that the energy barrier required by crystallization is improved so as to improve the thermal stability of the Si-O-Hf amorphous network;