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421results about How to "Avoid removal" patented technology

3D printing method for embedded electronic product and 3D printer

The invention discloses a 3D printing method for an embedded electronic product and a 3D printer. After each layer of structure material is printed, a layer of release material is arranged around a support reserved position in a jet printing manner, support printing is conducted, and when the set of structure layers are printed, supports of reserved holes and grooves are removed, an electronic component is embedded, printing of the set of electric conduction layer structure, jet printing of electric conduction circuits and jet printing of dielectric materials between the electric conduction circuits are sequentially conducted, the process is repeatedly conducted till the last set of electric conduction layer structure is printed, and the electronic product is packaged through printing structure materials. The release material is introduced between the structure material and a support material, the support material is easy to remove, on one hand, removal of the supports through an ultrasonic alkaline solution is avoided (a traditional support removing technology is not allowed to be adopted in the embedded electronic product), and on the other hand, influences on a printed electric conduction circuit from support removal are avoided. The problem about support removal in the embedded electronic product manufacturing process is effectively solved.
Owner:QINGDAO TECHNOLOGICAL UNIVERSITY

Secondary self-propagating welding method for cathode soft belt and large bus for aluminum electrolysis cell

The invention relates to a secondary self-propagating welding method for a cathode soft belt and a large bus for an aluminum electrolysis cell. The method includes first taking down a waste cathode soft belt, welding an aluminum plate at one end of a new soft belt beam, welding a steel aluminum explosion block at the other end, coating aluminum welding flux on the groove face, arranging a crucible above a welding seam, arranging a self-fluxing plug in the crucible, preheating a bus material and the crucible, arranging welding powder into the welding seam and the crucible, evenly scattering pyrophoric powder on the surface of welding powder at the two positions, igniting the pyrophoric powder in the welding seam, erecting the crucible above the welding seam quickly after the welding powder finishes reaction and igniting the pyrophoric powder in the crucible at the moment to enable the welding powder in the crucible to react. When a metal solution enters the welding seam, welding of the aluminum plate at the end of the soft belt and the bus can be finished, and the steel aluminum explosion block at the other end of the soft belt is connected with a steel rod on a groove casing through arc welding. A workpiece with different sections has good conductivity and strength when the workpiece is welded through the method.
Owner:QINGTONGXIA ALUMINUM GRP +1

Forming method of semiconductor device

The invention provides a forming method of a semiconductor device. The forming method comprises the steps of providing a semiconductor substrate which is provided with a device surface and a back opposite to the device surface, etching the semiconductor substrate in a direction from the back of the semiconductor substrate to the device surface of the semiconductor substrate, forming a through hole in the semiconductor substrate to expose the surface of a dielectric layer, forming an insulating layer for covering the back of the semiconductor substrate, the sidewall of the through hole and the insulating layer of the dielectric layer, and etching off the insulating layer and the dielectric layer located at the bottom of the through hole by use of an anisotropic etching process to expose the surface of a metal liner layer, wherein the dielectric layer and the metal liner layer are formed in the semiconductor substrate; the insulating layer thinnest on the surface of the dielectric layer. The forming method has the advantages that the process of etching off the dielectric layer is prevented from damaging the sidewall of the through hole, the roughness of the sidewall of the through hole is improved, and therefore, the reliability of the semiconductor device can be improved, and the electric leakage problem can be avoided.
Owner:SEMICON MFG INT (SHANGHAI) CORP
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