Forming method of semiconductor device

Abstract

The invention provides a forming method of a semiconductor device. The forming method comprises the steps of providing a semiconductor substrate which is provided with a device surface and a back opposite to the device surface, etching the semiconductor substrate in a direction from the back of the semiconductor substrate to the device surface of the semiconductor substrate, forming a through hole in the semiconductor substrate to expose the surface of a dielectric layer, forming an insulating layer for covering the back of the semiconductor substrate, the sidewall of the through hole and the insulating layer of the dielectric layer, and etching off the insulating layer and the dielectric layer located at the bottom of the through hole by use of an anisotropic etching process to expose the surface of a metal liner layer, wherein the dielectric layer and the metal liner layer are formed in the semiconductor substrate; the insulating layer thinnest on the surface of the dielectric layer. The forming method has the advantages that the process of etching off the dielectric layer is prevented from damaging the sidewall of the through hole, the roughness of the sidewall of the through hole is improved, and therefore, the reliability of the semiconductor device can be improved, and the electric leakage problem can be avoided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] With the rapid development of semiconductor manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions of semiconductor devices, semiconductor chips are developing towards higher integration. The higher the integration level of the semiconductor chip, the smaller the feature size (CD: Critical Dimension) of the semiconductor device. [0003] A three-dimensional integrated circuit (IC: Integrated Circuit) is manufactured by using advanced chip stacking technology, which is to stack chips with different functions into an integrated circuit with a three-dimensional structure. Compared with two-dimensional integrated circuits, the stacking technology of three-dimensional integrated circuits can not only shorten the signal transmission path o...

AI Technical Summary

Problems solved by technology

[0006] However, the sidewalls of via holes formed by the existing TSV technology are rough, which easily leads to leakage problems in semiconductor devices

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