Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

64results about How to "Improve doping uniformity" patented technology

Method for manufacturing rare earth extended fibre-optical prefabricated bar

A process for preparing the prefabricated RE-doped optical-fibre rod features that the chemical gas-phase deposition of plasma is used to deposit the doped SiO2 layer on the inner surface of liner quartz tube and the evaporator is used to directly deliver the RE compound and other codoping agent into reaction tube for direct deposition without pollution.
Owner:FENGHUO COMM SCI & TECH CO LTD

Rare-earth uniformly-doped fiber perform core rod and preparation method thereof

The invention relates to a rare-earth uniformly-doped fiber perform core rod and a preparation method thereof. The core rod adopts silicon dioxide used as a matrix and is at least doped with a rare earth ion and a co-doping ion, wherein the doping concentration of the rare earth element is calculated in the oxide form; the concentration of the doped rare earth oxide is 0.05-0.5mol%; the co-doping ion is at least one of Al and P elements; the co-doping agent concentration is calculated in the oxide form; and the concentration of the co-doping agent oxide is 0.4-10mol%. The core rod is prepared by adopting a powder forming-sintering method. The core rod disclosed by the invention has the advantages that the fiber core has high doping uniformity in the axial direction and the radial direction; the refractive index profile of the fiber core has high flatness; the numerical aperture (NA) of the fiber core is accurate and adjustable; and the optical fiber has high slope efficiency. Based on the rare earth doped core rod, various rare-earth doped optical fibers with different structures can be manufactured by using a core rod through the external cladding technology, i.e., the manufacturing requirements of rare earth doped optical fibers with different structures such as single cladding single mode, double cladding single mode, polarization-maintaining double cladding, large-mode field area air hole double cladding and the like are satisfied.
Owner:YANGTZE OPTICAL FIBRE & CABLE CO LTD

Preparation method of lithium titanate (Li4Ti5O12)/Ag composite lithium-ion negative electrode materials

The invention discloses a preparation method of nanometer lithium titanate (Li4Ti5O12) / Ag composite lithium-ion negative electrode materials. The Ag doping modification is simultaneously carried out on the nanometer Li4Ti5O12. The chemical ingredients and the grain diameters of the Li4Ti5O12 are effectively controlled through hydrothermal treatment, the temperature during the subsequent treatment is greatly shortened, the grain agglomeration is prevented, and the industrial implementation is easier. In the preparation process, the Ag is doped, the conductivity of the materials is greatly improved, and meanwhile, the high-power charging and discharging performance and the cyclic times of the materials are effectively improved. The high-power specific capacity of the prepared materials is high, and the materials can be used for batteries required by various kinds of portable electronic equipment and various electric vehicles.
Owner:SHANGHAI UNIV

Preparation method for high-purity flaky alumina

The invention discloses a preparation method for high-purity flaky alumina, belonging to the technical field of preparation of special powder. The preparation method comprises the following steps: with high-purity aluminum isopropoxide with a purity of 99.999%, pure water and isopropanol as main raw materials and ammonium bifluoride or ammonium fluoride as a crystal morphology controlling agent, dissolving the high-purity aluminum isopropoxide in isopropanol to prepare a solution A; preparing a solution B from pure water, isopropanol and ammonium bifluoride; then gradually adding the solution A into the solution B drop by drop at a certain addition speed; carrying out a reaction under the conditions of heating and stirring so as to produce hydrated alumina; and then successively carrying out filtering, drying and roasting so as to obtain the high-purity flaky alumina. The high-purity flaky alumina prepared by using the method has crystal grain thickness of no more than 1.0 [mu]m, a radial size of 5 to 20 [mu]m, a smooth surface, a flaky shape, no agglomeration and crystal twinning, and good dispersibility, and can be used in fields like cosmetics, pearlescent pigment, high-grade coatings and fine ceramics.
Owner:SHENGNUO OPTOELECTRONICS TECH QH CO LTD

Coated-type doping method for graphene

The invention provides a graphene coating type doping method, which comprises the following steps: Step 1, preparing a doping coating solution; Step 2, coating the doping solution on the target substrate surface; The cloth liquid substrate is heated for polymerization and curing to form a doped coating; step 4, soak the doped coating with deionized water and dry it; step 5, transfer and cover graphene on the doped coating to form A composite structure composed of the first doped coating and graphene in sequence. Further, the above step 1 to step 4 can also be repeated on the composite structure to form a second layer of doped coating. The beneficial effects of the present invention are: adopting coating doping process, the thickness of the doped coating is uniform and controllable, suitable for large-area "roll-to-roll" production; in addition, the doped coating itself is stable, and is located between the graphene and the target substrate Between, the doping effect is stable and long-lasting.
Owner:CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI

Lithium cobalt oxide material and preparation method thereof as well as anode material

The invention provides a lithium cobalt oxide material and a preparation method thereof as well as an anode material. The lithium cobalt oxide material is mainly prepared from an element M doped lithium cobalt oxide particle and a coating which coats the surface of the lithium cobalt oxide particle; the molecular formula of the lithium cobalt oxide particle is LiaCo1-bMbO2, wherein a is not less than 0.95 but not more than 1.15; b is not less than 0.003 but not more than 0.01; M is at least one or several of Mg, Al, Ti, Zr, Ni, Mn, Cr, Mo, W and a rare earth element; the coating is selected from one or a mixture of ZnO and SnO2, and has a weight which is 0.5wt% to 5 wt%, preferably 1wt% to 5wt%, preferably 2wt% to 5wt% and preferably 2wt% to 4wt%, of that of the lithium cobalt oxide particle. By using the lithium cobalt oxide material, the problems that the rate capability and the cycle performance of an existing material are poor under high pressure are solved.
Owner:HUNAN RESHINE NEW MATERIAL

Metal-doped low-density poly-4-methyl-1-amylene foamed material and its preparation

InactiveCN1613908AImprove doping uniformityHigh content of doping metal elementsNon solventMetallurgy
A kind of foam material made from metal adulterated by low-density poly-4-methyl-pentylene and its preparation are disclosed. It is produced by: blending with the dissolvent / non-solvent system and metal power, heating and melting, forming the dispersive system including the metal power through stirring, dispersing the metal power using supersonic wave, putting in the poly-4-methyl-pentylene, shifting it into die after heated and dissolved, lower the temperature at a fixed rate, getting the need shapes from the solid mixture after condensation, vacuum drying or supercritical extraction. Its advantages include: good doped uniformity, large content of the doped element, realizable to adulterate one element or several elements.
Owner:LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS

Preparation method of fluorine-doped lithium-rich manganese-based positive electrode material

The invention discloses a preparation method of a fluorine-doped lithium-rich manganese-based positive electrode material. The lithium-rich manganese-based positive electrode material has a chemical general formula of xLi2MnO3.(1-x) LiMO<2-y>F<2y>, wherein x is larger than or equal to 0.1 and smaller than or equal to 0.9, y is larger than 0 and smaller than or equal to 0.05, and M is one or more of Ni, Co, Mn, Cr, Fe, Ti, Mo, Ru, V, Nb, Zr and Sn. The preparation method comprises the following steps of: preparing a fluorine-doped lithium-rich manganese-based precursor through a precipitation reaction by adopting soluble metal salt, a precipitator, a soluble fluorine-containing compound and water; and uniformly mixing the fluorine-doped lithium-rich manganese-based precursor with a lithium salt, and carrying out presintering and high-temperature sintering to obtain the fluorine-doped lithium-rich manganese-based positive electrode material. According to the method, the soluble fluorine-containing compound is used as a fluorine source, fluorine doping is synchronously realized during coprecipitation of the lithium-rich manganese-based precursor, the doping uniformity is relatively good, and the cycle performance of the doped lithium-rich material is greatly improved.
Owner:CHINA AUTOMOTIVE BATTERY RES INST CO LTD

Method for preparing single-core MgB2 superconducting line/strip

The invention discloses a method for preparing a single-core MgB2 superconducting line / strip. The method comprises the steps that (1) mixed powder is prepared; (2) high-energy ball milling is conducted on the mixed powder, so that precursor powder is obtained; (3) the precursor powder is contained in a composite metal tube, so that a filled tube composite body is manufactured; (4) rotary forging and drawing are conducted, so that a single-core line is obtained; (5) vacuum sintering is conducted, so that the single-core MgB2 superconducting line is obtained or after the single-core line is rolled into a strip, vacuum sintering is conducted on the strip, so that the single-core MgB2 superconducting strip is obtained. According to method for preparing the single-core MgB2 superconducting line / strip, firstly, heat treatment with high temperature is conducted on powder raw materials, it can be guaranteed that TiB2 generated after a reaction is evenly distributed on a crystal boundary, and therefore the critical current density of the MgB2 superconducting line / strip can be increased easily; secondly, due to the fact that crystal grains are further refined through high-energy ball mining, the density of a superconducting core wire is increased easily and the connectivity of MgB2 crystal grains is improved easily; thirdly, more crystal boundaries formed by grain refinement can form a pinning center, and therefore the critical current density of the line / strip is increased further.
Owner:NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH

Lightly-doped substrate, substrate with selective emitter, and solar cell and preparation method and application thereof

The invention provides a lightly-doped substrate, a substrate with a selective emitter, and a solar cell and a preparation method and application thereof. The lightly-doped substrate comprises a P type silicon wafer layer, an N type silicon layer, a first phosphorosilicate glass layer, an oxide layer and a second phosphorosilicate glass layer which are connected in sequence. According to the invention, in the subsequent heavy doping process of the lightly-doped substrate, the doping uniformity of a doping source on the surface of a silicon wafer can be improved, and the square resistance valueof a heavy doped region can be reduced, so that the silver-silicon contact resistance is reduced; the preparation method of the lightly-doped substrate is simple, easy to implement and suitable for industrial large-scale production and application; and the phosphorus content of the heavily-doped region in the substrate with the selective emitter prepared by the lightly-doped substrate is relatively high, the sheet resistance of the heavily doped region is relatively low and uniform, and the prepared solar cell has relatively high light conversion efficiency.
Owner:YANCHENG CANADIAN SOLAR INC +2

Low-resistivity P-type 4H-SiC single crystal and preparation method thereof

The application discloses a low-resistivity P-type 4HSiC single crystal and a preparation method thereof, wherein silicon carbide growth simulation software is adopted to simulate the crystal growth process of a physical vapor transport method, and the temperatures of all points in a crucible, the material transport flow line, the residual material shape, the crystallinity and the like which cannot be monitored are obtained, and then the temperature field, thermal diffusion, material transmission and surface kinetics in the model can be acquired according to the material transmission path and the SiC powder state diagram at each preset time node in the growth process of the SiC single crystal and the temperature field diagram in the crucible; finally, the simulation result is analyzed, wherein the growth temperature and the growth pressure and the placement position of the Al source releaser in the crucible are selected, and actual growth on the p-type 4HSiC single crystal is carried out by utilizing a PVT single crystal growth furnace, so that the doping uniformity can be improved, and the P-type 4HSiC single crystal with good quality is obtained.
Owner:SHANDONG UNIV

Preparation method of vertical-gate semiconductor device

The invention provides a preparation method of a vertical-gate semiconductor device. The preparation method comprises the following steps: providing a substrate; forming a trench in the substrate, wherein the trench defines a photodiode region and a floating diffusion region; forming a first polycrystalline silicon layer in the trench, wherein the first polycrystalline silicon layer covers the inner wall of the trench and extends to cover the surface of the substrate; performing a first ion implantation process on the first polycrystalline silicon layer; forming a second polycrystalline silicon layer in the trench, wherein the trench is filled with the second polycrystalline silicon layer, and the second polycrystalline silicon layer covers the first polycrystalline silicon layer; and performing a second ion implantation process on the second polycrystalline silicon layer and the first polycrystalline silicon layer. According to the invention, the phenomenon of non-uniform electrical performance of an image sensor is improved.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP

Gallium nitride PN junction realized by injecting fluorine ions and manufacturing method of gallium nitride PN junction

The invention discloses a gallium nitride PN junction realized by injecting fluorine ions and a manufacturing method of the gallium nitride PN junction. The gallium nitride PN junction comprises a substrate, an n-type gallium nitride semiconductor layer disposed on the substrate and a p-type gallium nitride semiconductor layer embedded in a middle area of the n-type gallium nitride semiconductor layer. An n-type doping gallium nitride semiconductor layer is provided with a first electrode, and a p-type doping gallium nitride semiconductor layer is provided with a second electrode. The preparation method for realizing the gallium nitride-based PN junction by injecting the fluorine ions is compatible with the existing silicon process, the distribution of the concentration and depth of the injected fluorine ions is precisely controllable, and the formed p-type gallium nitride semiconductor layer has high doping uniformity. The preparation process is simple, and the cost is low.
Owner:JIANGNAN UNIV

High-voltage lithium cobaltate positive electrode material, preparation method thereof and lithium-ion secondary battery

The invention provides a high-voltage lithium cobaltate positive electrode material, a preparation method thereof and a lithium-ion secondary battery. The high-voltage lithium cobaltate positive electrode material is a multi-stage core-shell structure and comprises a lithium cobaltate core layer of an alpha-NaFeO2 structure, a composite doped layer and a functional shell layer from the inside to the outside, the general formula of the high-voltage lithium cobaltate positive electrode material is LiCoO2.D-LiCo1-xMxO2.S-Li-La-X-O, x is larger than or equal to 0.01 and smaller than or equal to 0.06, M is one or more elements in the group consisting of Al, Ti, Zr, La, Nb and rare earth elements, and X is one or more elements in the group consisting of Zr, Nb, Sc and Ga. According to the invention, through the high-temperature sintering of the lithium cobaltate core layer coated with the functional shell layer, the material of the functional shell layer is doped into a lithium cobaltate surface layer, therefore, the structure of lithium cobaltate is stabilized, the phase change of the lithium cobaltate in a high-voltage discharge process is inhibited, and the cycle performance and rateperformance are improved.
Owner:XIAMEN UNIV

Plasma immersion ion implantation device

The embodiment of the invention provides a plasma immersion ion implantation device. The plasma immersion ion implantation device comprises a process cavity, a medium cylinder, a gas uniformizing component, a coupling coil and a conductive component, wherein a base is arranged in the process cavity, the process cavity is grounded, and the base is electrically connected with a bias power supply; the medium cylinder is arranged at the top of the process cavity and communicates with the interior of the process cavity, and the inner diameter of the medium cylinder is gradually increased from top to bottom; the gas uniformizing component is made of a first conductive material and is arranged at the top of the medium cylinder, the lower surface of the gas uniformizing component is provided witha gas uniformizing area exposed in the medium cylinder, and a plurality of gas outlets are distributed in the gas uniformizing area and are used for conveying process gas into the medium cylinder; thecoupling coil is arranged on the periphery of the medium cylinder in a surrounding mode and is electrically connected with an excitation power supply; and the conductive component is electrically connected with the gas uniformizing component and the cavity wall of the process cavity. According to the plasma immersion ion implantation device provided by the embodiment of the invention, the wafer doping uniformity can be improved.
Owner:BEIJING NAURA MICROELECTRONICS EQUIP CO LTD

A method for induce formation of 2DHG in gallium nitride by fluorine ion implantation

The invention discloses a method for inducing high-concentration movable holes in GaN material by using a fluorine ion implantation method, a hole quantum well and a two-dimensional hole gas (2DHG) are formed, the high efficiency p-type doping of GaN material is realized, Unlike the traditional p-doping principle, This method is mainly realized by adjusting the relative position between the valence band of F + and Fermi level, The device structure comprises a substrate, an n-type gallium nitride semiconductor layer (containing fluorine ion implantation) on a substrate, A metal electrode is arrange on that n-type gallium nitride semiconductor layer. The invention utilize F + with strong electronegativity of ion implantation to induce high-concentration 2DHG in the gallium nitride to providemovable holes, which is compatible with the prior silicon technology, and the concentration and depth of the implanted fluorine ion can be precisely regulated, and the preparation process is simple and the cost is low.
Owner:JIANGNAN UNIV

Preparation method of ferroelectric film, ferroelectric memory and preparation method of ferroelectric memory

The embodiment of the invention provides a preparation method of a ferroelectric film, a ferroelectric memory and a preparation method of the ferroelectric memory. The preparation method of the ferroelectric film comprises the following steps that atomic layer deposition is carried out by taking a main element source as a reaction precursor, main elements are deposited on the surface of a substrate, and most free bonding points on the surface of the substrate are absorbed by controlling the deposition time; then inert gas is used as purification gas for performing clearing and purging on a chamber; then atomic layer deposition is carried out by taking a doping element source as a reaction precursor, so that doping elements adsorb residual free bonding points on the surface of the substrate; inert gas is used as purification gas for clearing and purging; at the moment, the two precursors exist on the surface of the substrate at the same time, and then are subjected to oxidation treatment together by using oxidizing gas; then inert gas is used as purification gas for clearing and purging; and the steps are repeated to obtain the ferroelectric film with the target thickness. Accordingto the method provided by the embodiment, better low-concentration uniform doping can be realized.
Owner:XIANGTAN UNIV

Ytterbium-doped gadolinium yttrium aluminum garnet crystal and growth method thereof

The invention provides an ytterbium-doped gadolinium yttrium aluminum garnet crystal and a growth method thereof, and belongs to the technical field of photoelectron materials. The existing Yb:Y3Al5O12 crystal is low in doping concentration and low in doping uniformity and has less possibility of achieving high-power laser output when serving as a laser material. According to the existing Yb:Y3Al5O12 crystal growth method, the Yb:Y3Al5O12 has a high smelting point of 1,950 DEG C, so that the volatilization amount of yttrium in an yttrium crucible is large, the side effect is high, the quality of the crystal is poor, and the size is small. The molecular formula of the ytterbium-doped gadolinium yttrium aluminum garnet crystal is Yb:Y2GdAl5O12, and the crystal base is yttrium aluminum garnet. According to the growth method of the ytterbium-doped gadolinium yttrium aluminum garnet crystal, the growth material comprises yttrium oxide (Y2O3), gadolinium oxide (Gd2O3) and aluminum oxide (Al2O3) at a chemical metering ratio of 2:1:5; after x moles of ytterbium oxide is added into the growth material, the adding amount of the Gd2O2 is required to be reduced by (1-x) mole on the basis of the chemical metering ratio; and the growth process parameters of the crystal are determined as follows: the pull speed is between 0.5 and 0.8 mm / h, the rotation speed is between 12 and 18 rpm and the growth temperature is 1,880 DEG C.
Owner:JILIN JIANZHU UNIVERSITY

High-content element uniformly-doped lithium cobalt oxide precursor and preparation method thereof

PendingCN114573042ADoping uniformityReduced sedimentation rate differencesCell electrodesSecondary cellsCrystal systemCubic crystal system
The invention relates to a high-content element uniformly-doped lithium cobalt oxide precursor and a preparation method thereof, the structural formula of the lithium cobalt oxide precursor is CoxMyO4, x is more than or equal to 0.95 and less than 1, y is more than 0 and less than or equal to 0.05, M represents a doped metal, the crystal system is a cubic system, the space group is F-43m, the unit cell parameter a value of the lithium cobalt oxide precursor is between 8.07 and 8.12, and the unit cell parameter b value of the lithium cobalt oxide precursor is more than 0 and less than 1. The true density is between 6.02 g / cm < 3 > and 6.10 g / cm < 3 >.
Owner:XTC NEW ENERGY MATERIALS(XIAMEN) LTD

Method for preparing zinc oxide material

The invention relates to a process for preparing zinc oxide material. The preparing process for zinc oxide material is characterized in that the preparing process includes the following steps: 1) selection of material: selecting material containing zinc oxide, urea and water as the mole ratio of zinc oxide and urea is 0.001-0.9 and that of zinc oxide and water is 0.01-1000 as reserve material, 2) blending the material containing zinc oxide, urea and water, grinding the mixture uniformly and obtaining slurry, 3) heating to form colloid: heating the slurry obtained from the step 2) at the temperature between 121-340 DEG C to obtain transparent colloid, 4) employing one of the following two methods to obtain zinc oxide material: a ) heat decompositing filter residue by hydrolysis to obtain zinc oxide material, b ) heat decomposition: heating the colliod obtained from step 3) to the temperature between 420-800 DEG C to obtain zinc oxide material. The method has the advantages of low cost, low reaction temperature and capability of catalyzing urea to heat decomposite to obtain cyanamide. The obtained product is characterized that graininess is small, adulteration is uniform and the product is larger than the specific surface area.
Owner:WUHAN INSTITUTE OF TECHNOLOGY

A rare earth uniformly doped optical fiber preform core rod and its preparation method

The invention relates to a rare-earth uniformly-doped fiber perform core rod and a preparation method thereof. The core rod adopts silicon dioxide used as a matrix and is at least doped with a rare earth ion and a co-doping ion, wherein the doping concentration of the rare earth element is calculated in the oxide form; the concentration of the doped rare earth oxide is 0.05-0.5mol%; the co-doping ion is at least one of Al and P elements; the co-doping agent concentration is calculated in the oxide form; and the concentration of the co-doping agent oxide is 0.4-10mol%. The core rod is prepared by adopting a powder forming-sintering method. The core rod disclosed by the invention has the advantages that the fiber core has high doping uniformity in the axial direction and the radial direction; the refractive index profile of the fiber core has high flatness; the numerical aperture (NA) of the fiber core is accurate and adjustable; and the optical fiber has high slope efficiency. Based on the rare earth doped core rod, various rare-earth doped optical fibers with different structures can be manufactured by using a core rod through the external cladding technology, i.e., the manufacturing requirements of rare earth doped optical fibers with different structures such as single cladding single mode, double cladding single mode, polarization-maintaining double cladding, large-mode field area air hole double cladding and the like are satisfied.
Owner:YANGTZE OPTICAL FIBRE & CABLE CO LTD

Preparation method of high-performance Cr3+ and Nd3+ compositely doped GSGG laser ceramic

InactiveCN106966729AIncrease the doping concentrationBroad fluorescent linesAir atmosphereNitrate
The invention discloses a high-performance Cr3+ and Nd3+ compositely doped GSGG laser ceramic and a preparation method of the ceramic. The preparation method comprises the following steps that high-purity Cr3O3, Nd2O3, Gd2O3, Sc2O3 and Ca2O3 powder is taken as the raw materials, the raw materials are compounded according to the stoichiometric ratio of the raw materials, a nitrate solution is formed after uniform mixing, the raw materials are injected into the nitrate solution by one step with ammonium hydroxide as a precipitant, at the same time, full stirring is performed, and a sediment solution is formed by aging; the sediment solution is filtered, washed and dried to obtain a precursor powder body, calcination is performed at the temperature of 800 DEG C to 1,100 DEG C in the air atmosphere, and a Cr3+ and Nd3+: GSGG nano-powder body is obtained; the nano-powder body is subjected to isostatic cool pressing after being dry-pressed, vacuum sintering is performed, a sample is taken out and ground and polished after furnace temperature is cooled to the room temperature, and the Cr3+ and Nd3+: GSGG laser ceramic is obtained. Compared with single crystals of the system, the preparation technology is simple, and the comprehensive performance of the material can be improved.
Owner:UNIV OF SCI & TECH BEIJING

Ternary positive electrode material and preparation method and application thereof

The invention discloses a ternary positive electrode material and a preparation method and application thereof. The preparation method comprises the following steps: mixing a ternary precursor, a lithium source and a metal dopant, and taking an organic solvent as a dispersion medium, and performing mixing, wet grinding and drying to obtain a mixture; ultrasonically infiltrating the mixture by using a fluorine-containing organic solvent, and performing granulating and tabletting to obtain mixed particles; and carrying out high-temperature sintering, crushing and grading on the mixed particles by adopting three-section programmed heating to prepare the ternary positive electrode material. By changing the mixing mode of the metal dopant and the precursor, ultrasonically infiltrating the fluorine-containing organic solvent and matching with the three-section programmed heating,the obtained ternary positive electrode material is uniformly doped with metal elements, the doping effect is good, the content of residual alkali on the surface of the material is effectively reduced, and the ternary positive electrode material has excellent electrochemical performance.
Owner:HEFEI GUOXUAN HIGH TECH POWER ENERGY CO LTD CO LTD

Gallium and scandium co-doping zinc oxide scintillation single crystal and preparation method thereof

The invention discloses a gallium and scandium co-doping zinc oxide scintillation single crystal and a preparation method thereof. ZnO and GaXScY of the gallium and scandium co-doping zinc oxide scintillation single crystal contain two doped ions which are Ga3+ and Sc3+, wherein the final doping concentration X of Ga3+ in the zinc oxide scintillation single crystal is 1-1000 ppm, and the final doping concentration Y of Sc3+ in the zinc oxide scintillation single crystal is 10-10000 ppm. According to the preparation method, zinc oxide serves as a raw material, and the gallium and scandium co-doping zinc oxide scintillation single crystal is generated by adopting a hydrothermal method. The gallium and scandium co-doping zinc oxide scintillation single crystal is excellent in scintillation and physical performance, and large-size high-quality single crystal is obtained easily through growth.
Owner:桂林百锐光电技术有限公司 +1

A vertical pulling method for monocrystalline silicon

The invention provides a vertical pulling method for monocrystalline silicon. The method includes the following steps: providing a silicon sheet with the surface grown deuterium doped silicon nitride;performing mixing fusion on the silicon sheet and a polysilicon fragment; performing seed crystal melting; and adopting the vertical pulling method with a magnetic field to form a monocrystalline silicon ingot. The invention also provides a formation method of a wafer, and the monocrystalline silicon ingot prepared by the vertical pulling method is used as an original material to form the wafer.The concentrations of nitrogen and deuterium of a silicon single-crystal bar can be accurately controlled and the good doping uniformity is obtained by the vertical pulling method for monocrystallinesilicon.
Owner:ZING SEMICON CORP

Method for enhancing ohmic contact of gallium oxide semiconductor device

The invention relates to a method for enhancing the ohmic contact of a gallium oxide semiconductor device. The method comprises the following steps of defining a pattern of which an ohmic contact region needing to be enhanced on the upper surface of a gallium oxide substrate by adopting a photoetching process, exposing the region, and shielding the residual region by using a photoresist; injectingthe doping ions into the upper surface of the substrate; removing the photoresist on the upper surface of the gallium oxide substrate; performing heat treatment; defining and forming a pattern of a metal electrode region by adopting the photoetching process, exposing the region, and shielding other regions by using the photoresist; forming a metal electrode on the upper surface of the gallium oxide substrate; removing the photoresist on the upper surface of the gallium oxide substrate; carrying out the fast annealing treatment. According to the method for enhancing the ohmic contact of the gallium oxide semiconductor device, the doping range, the concentration and the depth of the ohmic contact region can be accurately controlled, the preparation process is simple, the ohmic contact of the gallium oxide semiconductor device can be effectively enhanced in combination with thermal annealing treatment after injection, and the gallium oxide semiconductor device with good ohmic contact isformed.
Owner:NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD

Method for preparing Ni-Re sponge oxide cathode

The invention discloses a method for preparing a Ni-Re sponge oxide cathode. The method comprises the following steps: immersing a Ni net sintered with a Ni sponge layer in NH4ReO4 water solution to enable the Ni sponge layer to absorb NH4ReO4; sintering the Ni net to enable the Ni sponge layer containing NH4ReO4 to be converted into a Ni-Re sponge layer; and applying carbonate in the sponge holes and on the surface of the Ni sponge layer of the Ni net. By the adoption of the method of the invention, the emission current density of the Ni sponge oxide cathode can be improved, the working temperature of the cathode can be reduced and the activity of the cathode can be enhanced.
Owner:INST OF ELECTRONICS CHINESE ACAD OF SCI

Method for improving doping uniformity of semiconductor laser

The invention discloses a method for improving the doping uniformity of a semiconductor laser, and the method comprises the steps: placing a substrate on a pedestal of epitaxial growth equipment, and enabling the edge, facing the surface of the pedestal, of the substrate not to be in contact with the surface, facing the substrate, of the pedestal; sequentially growing an n-type epitaxial layer, an active layer and a p-type epitaxial layer on the surface, deviating from a base, of a substrate, introducing a growth condition sensitive doping source required for growing the p-type epitaxial layer from two or three gas paths of epitaxial growth equipment, and vertically arranging the two or three gas paths. By implementing the invention, the contact between the substrate and the base is changed, so that the contact between the edge of the substrate and the edge of the base becomes poor, the temperature uniformity of the surface of the substrate can be effectively adjusted, and the influence of the temperature on the non-uniform doping of the doping source can be reduced; moreover, two or three paths of doping sources sensitive to the growth condition are simultaneously introduced, so that the doping uniformity of the doping sources sensitive to the growth condition can be improved on the basis of reducing the influence of the temperature on the doping uniformity of the doping sources sensitive to the growth condition.
Owner:SUZHOU EVERBRIGHT PHOTONICS CO LTD +1
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products