A vertical pulling method for monocrystalline silicon

A technology of Czochralski single crystal silicon and single crystal silicon, which is applied in the direction of single crystal growth, single crystal growth, self-melting liquid pulling method, etc., can solve the problems of uneven nitrogen concentration of silicon melt, difficult to control, etc. Leakage current, improve performance and reliability, avoid penetration effect

Inactive Publication Date: 2018-10-16
ZING SEMICON CORP
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Problems solved by technology

The disadvantage is that due to the complete reliance on heat convection, the nitrogen concentration in the silicon melt is uneven and difficult to control

Method used

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  • A vertical pulling method for monocrystalline silicon

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Embodiment Construction

[0031] The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other under the condition of no conflict.

[0032] It should be noted that the drawings provided in the following embodiments are only used to illustrate the basic concept of the present invention in a schematic way, so the drawings only show the components related to the present invention rather than the number, shape and number of compo...

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Abstract

The invention provides a vertical pulling method for monocrystalline silicon. The method includes the following steps: providing a silicon sheet with the surface grown deuterium doped silicon nitride;performing mixing fusion on the silicon sheet and a polysilicon fragment; performing seed crystal melting; and adopting the vertical pulling method with a magnetic field to form a monocrystalline silicon ingot. The invention also provides a formation method of a wafer, and the monocrystalline silicon ingot prepared by the vertical pulling method is used as an original material to form the wafer.The concentrations of nitrogen and deuterium of a silicon single-crystal bar can be accurately controlled and the good doping uniformity is obtained by the vertical pulling method for monocrystallinesilicon.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a method for pulling single crystal silicon. Background technique [0002] During the growth of Czochralski single crystal silicon, due to the melting of the quartz crucible, a part of oxygen usually enters into the single crystal silicon, and these oxygens mainly exist in the interstitial positions of the silicon lattice. When the concentration of interstitial oxygen exceeds the solubility of oxygen in silicon at a certain temperature, the interstitial oxygen will precipitate in single crystal silicon, forming the common oxygen precipitation defect in single crystal silicon. Oxygen precipitation in silicon wafers can be detrimental to integrated circuit devices if not controlled. [0003] Through a certain process, a high-density oxygen precipitate is formed in the silicon wafer, and a certain depth of defect-free clean area is formed on the surface of the silico...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B15/04C30B30/04C30B33/02
CPCC30B15/04C30B29/06C30B30/04C30B33/02
Inventor 肖德元
Owner ZING SEMICON CORP
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