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Low-resistivity P-type 4H-SiC single crystal and preparation method thereof

A low-resistivity, 4h-sic technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of low success rate and long experiment period, achieve good quality and improve doping uniformity Effect

Inactive Publication Date: 2021-04-30
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Aiming at the problems of low success rate and long experiment cycle of growing low-resistivity p-type 4H-SiC single crystal by PVT method, the embodiment of this application provides a low-resistivity p-type 4H-SiC single crystal and its preparation method

Method used

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  • Low-resistivity P-type 4H-SiC single crystal and preparation method thereof
  • Low-resistivity P-type 4H-SiC single crystal and preparation method thereof
  • Low-resistivity P-type 4H-SiC single crystal and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0043] In this example, a growth pressure of 10 mbar is selected to ensure the growth rate of the crystal. The temperature at the center point of the upper lid of the crucible can be directly measured by an infrared thermometer during the actual growth of a single crystal, and the temperature change will have an important impact on the temperature field in the growth chamber. Combined with the temperature growth conditions of 4H-SiC single crystal, the temperature of the center point of the upper lid of the crucible was set to 2210 °C, 2230 °C, and 2250 °C, respectively, and the growth pressure was 10 mbar for temperature field simulation. Depending on the required calculation accuracy, in VR-PVT SiC TM The numerical simulation software is set to divide the calculation grid and optimize and adjust the grid. The heating method is radio frequency heating, and the heating power is set to follow the set temperature of the center point of the upper lid of the crucible for fitting,...

Embodiment 2

[0049] In this example, the growth simulation of 100mm p-type 4H-SiC single crystal is studied, the growth model is constructed according to the growth requirements, the material properties and boundary conditions of each module are defined, the calculation grid is divided and the grid is optimized and adjusted. Set the heating mode to select radio frequency heating, the heating power is fitted with the set temperature of the center point of the upper lid of the crucible, and the editing growth time is 24h. Firstly, the influence of different pressures on the temperature field was studied, and the center temperature of the upper lid of the crucible was defined as 2530℃, and the growth pressures in the cavity were changed to 10mbar, 50mbar, and 100mbar, respectively. The temperature field under different growth pressures in the cavity, the material transport path at each preset time node and the state diagram of SiC powder are obtained. The simulation results show that the chan...

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Abstract

The application discloses a low-resistivity P-type 4HSiC single crystal and a preparation method thereof, wherein silicon carbide growth simulation software is adopted to simulate the crystal growth process of a physical vapor transport method, and the temperatures of all points in a crucible, the material transport flow line, the residual material shape, the crystallinity and the like which cannot be monitored are obtained, and then the temperature field, thermal diffusion, material transmission and surface kinetics in the model can be acquired according to the material transmission path and the SiC powder state diagram at each preset time node in the growth process of the SiC single crystal and the temperature field diagram in the crucible; finally, the simulation result is analyzed, wherein the growth temperature and the growth pressure and the placement position of the Al source releaser in the crucible are selected, and actual growth on the p-type 4HSiC single crystal is carried out by utilizing a PVT single crystal growth furnace, so that the doping uniformity can be improved, and the P-type 4HSiC single crystal with good quality is obtained.

Description

technical field [0001] The present application relates to the technical field of silicon carbide single crystal growth, in particular to a low-resistivity P-type 4H-SiC single crystal and its preparation method. Background technique [0002] As a third-generation semiconductor material, SiC (silicon carbide) has excellent physical and chemical properties, and is an ideal substrate material for high-power, high-temperature, high-frequency, and radiation-resistant devices. It is used in power electronics, transportation, clean energy, It has broad application prospects in the fields of national defense and military affairs. Therefore, the research on the growth of SiC single crystal has been paid much attention. SiC single crystal is divided into n-type, semi-insulating, and p-type according to the conductivity type. At present, the research on n-type and semi-insulating SiC substrates at home and abroad is relatively mature, and the research on p-type SiC substrates has jus...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/002C30B29/36
Inventor 陈秀芳仲光磊谢雪健杨祥龙彭燕胡小波徐现刚
Owner SHANDONG UNIV
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