Method for enhancing ohmic contact of gallium oxide semiconductor device
A technology of ohmic contact and gallium oxide, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of difficult control of ohmic contact depth, great influence of ohmic contact annealing time and temperature, high annealing temperature, etc. , to achieve the effect of good flatness, low annealing temperature and low roughness
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[0049] Example 1
[0050] A method for enhancing the ohmic contact of a gallium oxide semiconductor device includes the following steps:
[0051] (1) Using a photolithography process to define the pattern of the ohmic contact area that needs to be enhanced on the upper surface of the gallium oxide substrate 1, expose the defined area on the upper surface of the gallium oxide substrate 1, and mask the remaining area with photoresist to form ions The photoresist layer 2 for injection, such as figure 1 Shown
[0052] (2) Inject silicon doped ions into the upper surface of the gallium oxide substrate 1, with a doping concentration of 2.5×10 15 cm -3 , The ion doping process adopts ion implantation process to form ion implantation layer 3, such as figure 2 Shown
[0053] (3) After the ion implantation is completed, remove the photoresist on the upper surface of the gallium oxide substrate, such as image 3 Shown
[0054] (4) Perform heat treatment on the gallium oxide substrate after ion i...
Example Embodiment
[0059] Example 2
[0060] A method for enhancing the ohmic contact of a gallium oxide semiconductor device includes the following steps:
[0061] (1) Using a photolithography process to define the pattern of the ohmic contact area that needs to be enhanced on the upper surface of the gallium oxide substrate 1, expose the defined area on the upper surface of the gallium oxide substrate 1, and mask the remaining area with photoresist to form ions The photoresist layer 2 for injection, such as figure 1 Shown
[0062] (2) Implant platinum doped ions on the upper surface of the gallium oxide substrate 1, with a doping concentration of 1×10 15 cm -3 , The ion doping process adopts ion implantation process to form ion implantation layer 3, such as figure 2 Shown
[0063] (3) After the ion implantation is completed, remove the photoresist on the upper surface of the gallium oxide substrate, such as image 3 Shown
[0064] (4) Perform heat treatment on the gallium oxide substrate after ion imp...
Example Embodiment
[0069] Example 3
[0070] A method for enhancing the ohmic contact of a gallium oxide semiconductor device includes the following steps:
[0071] (1) Using a photolithography process to define the pattern of the ohmic contact area that needs to be enhanced on the upper surface of the gallium oxide substrate 1, expose the defined area on the upper surface of the gallium oxide substrate 1, and mask the remaining area with photoresist to form ions The photoresist layer 2 for injection, such as figure 1 Shown
[0072] (2) Implanting zinc doped ions on the upper surface of the gallium oxide substrate 1 with a doping concentration of 5×10 16 cm -3 , The ion doping process adopts ion implantation process to form ion implantation layer 3, such as figure 2 Shown
[0073] (3) After the ion implantation is completed, remove the photoresist on the upper surface of the gallium oxide substrate, such as image 3 Shown
[0074] (4) Perform heat treatment on the gallium oxide substrate after ion impla...
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