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Preparation method of ferroelectric film, ferroelectric memory and preparation method of ferroelectric memory

A ferroelectric memory and ferroelectric thin film technology, applied in the field of ferroelectric thin film preparation, ferroelectric memory and its preparation, can solve the problems of difficult control of ferroelectric thin film doping concentration, poor uniformity of thin film doping, etc. Ensure doping uniformity, reduce process steps, and improve the effect of uniform doping

Inactive Publication Date: 2020-08-18
XIANGTAN UNIV
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Problems solved by technology

[0004] In the process of preparing some ferroelectric thin films with low doping concentration by atomic layer deposition, it is found that the doping concentration of the prepared ferroelectric thin film is difficult to control, and the doping concentration of the ferroelectric thin film is often much higher than the target doping concentration. And when preparing some relatively thin films, the doping uniformity of the prepared films is not good

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  • Preparation method of ferroelectric film, ferroelectric memory and preparation method of ferroelectric memory
  • Preparation method of ferroelectric film, ferroelectric memory and preparation method of ferroelectric memory
  • Preparation method of ferroelectric film, ferroelectric memory and preparation method of ferroelectric memory

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preparation example Construction

[0036] The embodiment of the present application discloses a method for preparing a ferroelectric thin film. The method includes:

[0037] The main element source is used as the reaction precursor to carry out atomic layer deposition, and the main element is deposited on the surface of the substrate; the precursor of the main element source is injected into the chamber with a set chamber temperature for surface reaction, and the deposition time is controlled to absorb the substrate. Most of the free bonding sites on the bottom surface;

[0038] Use inert gas as purge gas to carry out purging; through purging, remove excess reactants and by-products;

[0039] Atomic layer deposition is carried out using the dopant element source as a reactive precursor, so that the dopant element adsorbs the remaining free bonding points on the surface of the substrate;

[0040] Use inert gas as purge gas for purge removal;

[0041] Oxidation treatment with oxidizing gas;

[0042] Use inert...

Embodiment 1

[0056] The main element precursor 3 is a hafnium source precursor, specifically selected from tetramethylethylamino hafnium (99.9% in purity), and the dopant element precursor 5 is an aluminum source precursor, specifically selected from trimethylaluminum (TMA, with a purity of 99.9%) , O 3 As the oxygen source precursor, Ar is used as the carrier gas and purge gas. Al-doped hafnium oxide-based ferroelectric thin films with low doping concentration were prepared by an improved atomic layer deposition process, and the target doping concentration was 2%. Include the following steps:

[0057] Prepare a clean and tidy substrate 1 (refer to figure 1 ) into the chamber of the atomic layer deposition instrument.

[0058] The temperature of the chamber is preferably set to 280° C. and kept at a constant temperature, and then argon gas is introduced into the reaction chamber for 30 seconds while the pressure in the reaction chamber is controlled to be 180 mtorr. The heating tempera...

Embodiment 2

[0066] Select tetra-tert-butyl hafnium (purity is 99.9%) as hafnium source precursor, three (dimethylamino) silane (3DMAS, purity is 99.9%) is silicon source precursor, O 3 As the oxygen source precursor, Ar is used as the carrier gas and purge gas. A silicon-doped hafnium oxide-based ferroelectric thin film with low doping concentration was prepared by an improved atomic layer deposition process. The target doping concentration is 3%. Include the following steps:

[0067] Prepare a clean and tidy substrate (refer to figure 1 ) into the chamber of the atomic layer deposition instrument.

[0068] The temperature of the chamber is preferably set to 280° C. and kept at a constant temperature, and then argon gas is introduced into the reaction chamber for 30 seconds while the pressure in the reaction chamber is controlled to be 180 mtorr. The heating temperature of the reaction precursor is 75-80°C. Under this condition, the hafnium source precursor tetra-tert-butyl hafnium is...

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Abstract

The embodiment of the invention provides a preparation method of a ferroelectric film, a ferroelectric memory and a preparation method of the ferroelectric memory. The preparation method of the ferroelectric film comprises the following steps that atomic layer deposition is carried out by taking a main element source as a reaction precursor, main elements are deposited on the surface of a substrate, and most free bonding points on the surface of the substrate are absorbed by controlling the deposition time; then inert gas is used as purification gas for performing clearing and purging on a chamber; then atomic layer deposition is carried out by taking a doping element source as a reaction precursor, so that doping elements adsorb residual free bonding points on the surface of the substrate; inert gas is used as purification gas for clearing and purging; at the moment, the two precursors exist on the surface of the substrate at the same time, and then are subjected to oxidation treatment together by using oxidizing gas; then inert gas is used as purification gas for clearing and purging; and the steps are repeated to obtain the ferroelectric film with the target thickness. Accordingto the method provided by the embodiment, better low-concentration uniform doping can be realized.

Description

technical field [0001] The application belongs to the technical field of ferroelectric film preparation, and in particular relates to a method for preparing a ferroelectric film, a ferroelectric memory and a preparation method thereof. Background technique [0002] With the development of the information technology industry and the progress of society, the development of memory plays an important role in enhancing international competitiveness and maintaining national security. So far, mainstream memories such as high-density, low-cost DRAM and NAND Flash have become increasingly difficult to meet the needs of high-speed computing and low power consumption, and the development of new memory technologies has become an inevitable trend. At present, it is generally believed that ferroelectric memory is one of the most promising new types of memory, in which ferroelectric thin film is used as a storage medium to realize information storage. However, the traditional perovskite f...

Claims

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Application Information

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IPC IPC(8): C23C16/18C23C16/455C23C16/56H01L27/1159
CPCC23C16/18C23C16/45525C23C16/4408C23C16/56H10B51/30
Inventor 廖敏郇延伟戴思维刘兆通曾斌建周益春
Owner XIANGTAN UNIV
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