Coated-type doping method for graphene

A technology of ene coating and graphene, which is applied in chemical instruments and methods, coatings, electronic equipment, etc., can solve the problems of easy migration and volatilization, increase of graphene square resistance, and limit the practical application of graphene, so as to improve the doping The effect of improving the stability of doping and improving the uniformity of doping

Inactive Publication Date: 2016-06-15
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the physically adsorbed small molecule dopants have weak interaction with graphene, are easy to migrate and volatilize, and the square resistance of graphene continues to increase during the placement process, which severely limits the practical application of graphene.

Method used

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  • Coated-type doping method for graphene
  • Coated-type doping method for graphene
  • Coated-type doping method for graphene

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The steps of this embodiment are as follows:

[0023] Step 1, weigh 9.5gFeCl 3 ·6H 2 O was dissolved in 60g of absolute ethanol and 0.2g of ethylene glycol, then 1.4g of pyridine was added, after stirring evenly, 5g of 3,4-ethylenedioxythiophene monomer was added, and after mixing evenly, it was made into a doping coating solution;

[0024] Step 2, apply the doped coating solution on the target substrate 001 by roller coating method, with a wet film thickness of 20 μm;

[0025] Step 3, heating the coating at 70°C for 50 minutes;

[0026] Step 4, immerse the heat-treated coating in deionized water for 1 min, take it out and dry it to obtain the first doped coating 002;

[0027] Step five, transferring graphene 003 on the first doped coating 002 .

[0028] In this embodiment, the average square resistance of the prepared graphene is 232±15 ohm, heated at 140° C. for 90 minutes, and the average square resistance is 235±13 ohm after 30 days at room temperature, and the ...

Embodiment 2

[0030] The steps of this embodiment are as follows:

[0031] Step 1, weigh 25g of ferric p-toluenesulfonate and dissolve it in a mixed solvent composed of 70g of isopropanol, 65g of n-butanol and 15g of ethylene glycol monoethyl ether, then add 1.6g of pyridine, stir evenly, add 5g of pyrrole monomer, and mix well Afterwards, it is formulated into a doping coating solution;

[0032] Step 2, apply the doped coating solution on the target substrate 001 by slit coating, with a wet film thickness of 15 μm;

[0033] Step 3, heat treatment at 50°C for 120 minutes;

[0034] Step 4, heat treatment, immerse the dried coating in deionized water for 5 minutes, take it out and dry to obtain the first doped coating 002;

[0035] Step five, transferring graphene 003 on the first doped coating 002 .

[0036] Repeat steps 1 to 4 to form a second doped coating 004 on the graphene surface.

[0037] In this example, the average square resistance of the prepared graphene is 172±11 ohm, heated...

Embodiment 3

[0039] The steps of this embodiment are as follows:

[0040] Step 1, weigh 30g ferric p-toluenesulfonate and dissolve it in a mixed solvent composed of 30g methanol, 100g n-butanol, 5g ethylene glycol monomethyl ether and 3g ethylene glycol monobutyl ether, then add 0.6g of pyridine and stir evenly Add 5g of monomeric aniline, mix well and make doping coating solution;

[0041] Step 2, apply the doped coating solution on the target substrate 001 by spraying method, with a wet film thickness of 25 μm;

[0042] Step 3, heat treatment at 100°C for 30 minutes;

[0043] Step 4, after heat treatment, immerse the dried coating in deionized water for 3 minutes, take it out and dry to obtain the first doped coating 002;

[0044] Step five, transferring graphene 003 on the first doped coating 002 .

[0045] In this embodiment, the average square resistance of the prepared graphene is 277±16 ohm, heated at 140° C. for 90 minutes, and the average square resistance is 281±15 ohm after 3...

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Abstract

The invention provides a graphene coating type doping method, which comprises the following steps: Step 1, preparing a doping coating solution; Step 2, coating the doping solution on the target substrate surface; The cloth liquid substrate is heated for polymerization and curing to form a doped coating; step 4, soak the doped coating with deionized water and dry it; step 5, transfer and cover graphene on the doped coating to form A composite structure composed of the first doped coating and graphene in sequence. Further, the above step 1 to step 4 can also be repeated on the composite structure to form a second layer of doped coating. The beneficial effects of the present invention are: adopting coating doping process, the thickness of the doped coating is uniform and controllable, suitable for large-area "roll-to-roll" production; in addition, the doped coating itself is stable, and is located between the graphene and the target substrate Between, the doping effect is stable and long-lasting.

Description

technical field [0001] The invention relates to the technical field of graphene production, in particular to a graphene coating type doping method. Background technique [0002] Graphene is a new type of two-dimensional carbon nanomaterial discovered in the past ten years, which has excellent mechanical, thermal, optical, electrical and other properties. Among them, the extremely high transmittance and ultra-high carrier mobility make it a new transparent conductive material that has attracted the attention of the industry. [0003] At present, for two-dimensional continuous graphene film products, electrical properties are the core key properties. The existing relatively mature graphene film prepared by chemical vapor deposition (CVD) has a high square resistance and cannot be used directly. It must be doped to reduce the square resistance. Most of the current mainstream doping methods use small molecules as dopants, such as ethylenediamine, nitric acid, chloroauric acid,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B9/00B32B9/04B32B33/00B32B37/02C09D165/00C09D179/04C09D179/02
CPCB32B9/007B32B9/048B32B37/025B32B2037/243B32B2255/00B32B2255/26B32B2255/28B32B2264/108B32B2313/04B32B2457/00C09D165/00C09D179/02C09D179/04
Inventor 姜浩马金鑫黄德萍弋天宝李朝龙高翾李占成史浩飞
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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