Manufacture method of metal-multilayer insulator-metal capacitor

Abstract

The invention discloses a manufacture method of a metal-multilayer insulator-metal capacitor. The manufacture method comprises the following steps of: providing a substrate; depositing a low-dielectric-constant dielectric layer on the substrate; forming a hole in the low-dielectric-constant dielectric layer; depositing silicon nitride in the hole via the way of circularly depositing and processing oxygen-containing gas to form a mixing layer of the silicon nitride and the low-dielectric-constant dielectric layer; etching a silicon nitride layer to form a first metallic channel in the silicon nitride layer, and thinning the silicon nitride layer; depositing silicon oxide in the hole via the way of circularly depositing and processing the oxygen-containing gas, and etching the silicon oxide layer to remove the silicon oxide along horizontal direction; etching the low-dielectric-constant dielectric layer to form a second metallic channel; and performing metal filling to the first metallic channel and the second metallic channel. The invention effectively improves the capacitance of the capacitor in the layer, improves the electrical characteristics of the capacitor, such as breakdown voltage, leakage current and the like, and improves the electrical uniformity among all elements.

Description

technical field [0001] The invention relates to the field of microelectronics, in particular to a method for manufacturing a metal-multilayer insulator-metal capacitor. Background technique [0002] Capacitors are important components in integrated circuits and are widely used in memory, microwave, radio frequency, smart card, high voltage and filter chips. A widely used capacitor configuration in chips is metal-insulator-metal (MIM) parallel to the silicon substrate. Among them, the metal is copper, aluminum, etc., whose manufacturing process is easily compatible with the metal interconnection process, and the insulator is a dielectric material with a high dielectric constant (k) such as silicon nitride and silicon oxide. Improving the properties of high-k dielectric materials is one of the main methods to improve capacitor performance. [0003] Plasma Enhanced Chemical Vapor Deposition (PECVD, Plasma Enhanced Chemical Vapor Deposition) is widely used for thin film deposi...

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Problems solved by technology

As a result, under high voltage, the leakage current of silicon nitride film capacitors is large

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