Wafer annealing method

Abstract

The invention provides a wafer annealing method which comprises the following steps: providing a wafer which comprises a plurality of regions, and the plurality of regions are concentrically arrangedon the wafer; carrying out heating treatment on the plurality of regions, the heating treatment having a plurality of heating stages, the heating rates corresponding to the heating stages being different, and the temperatures of the plurality of regions in the heating stages being different; carrying out heat preservation treatment on the plurality of areas; and carrying out cooling treatment on the plurality of regions by adopting a nitrogen blowing cooling mode. According to the wafer annealing method provided by the invention, the electrical uniformity of the wafer can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a wafer annealing method. Background technique [0002] Wafer is one of the most important materials in the semiconductor industry. Products with specific electrical functions can be formed by forming various circuit component structures on the wafer. In the current production process, due to certain differences in the uniformity of manufacturing equipment, even if the uniformity of each process is very small, after multiple processes are superimposed and the wafer is tested, it can be clearly seen that the wafer The electrical distribution of the circle is uneven, resulting in a decrease in yield and severe leakage at the edge of the wafer. The existing technology mostly uses the yellow light process to adjust the critical dimension (CD for short) to improve this problem, but the yellow light process only has a significant effect on improving the electrical properties of...

AI Technical Summary

Problems solved by technology

In the current production process, due to certain differences in the uniformity of manufacturing equipment, even if the uniformity of each process is very small, after multiple processes are superimposed and the wafer is tested, it can be clearly seen that the wafer The electrical distribution of the circle is uneven, resulting in a decrease in yield and serious leakage at the edge of the wafer

In the existing technology, the critical dimension (CD for short) is mostly adjusted by the yellow light process to improve this problem, but the yellow light process only has a significant effect on improving the electrical properties of small-sized devices, and the effect gradually becomes invalid as the size increases.

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