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Preparation method and application of monocrystalline silicon wafer

A single crystal silicon wafer and single crystal silicon rod technology, which is applied in the field of single crystal silicon wafer preparation, can solve the problem of low utilization rate of single crystal silicon rod, and achieve the effects of increasing manufacturing cost, improving utilization rate and saving energy.

Active Publication Date: 2020-12-04
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The squaring of monocrystalline silicon ingots will produce side skins, and the side skins are generally returned to the furnace or used as high-efficiency polycrystalline ingot seed crystals, etc., resulting in a low utilization rate of monocrystalline silicon rods

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The preparation method of single crystal silicon wafer is used for preparing strip right-angle single crystal silicon wafer and single crystal silicon quasi-square wafer, comprising the following steps:

[0035] Determine the length (a) and width (b) of a strip-shaped right-angle single crystal silicon wafer, and the side length (L) of a single-crystal silicon quasi-square wafer, and the width (b) of a strip-shaped right-angle single crystal silicon wafer is smaller than that of a single crystal silicon wafer The side length (L) of the quasi-square sheet; determine the diameter (Φ) of the single-crystal silicon rod, and the side length (L) of the single-crystal silicon quasi-square sheet is smaller than the diameter (Φ) of the single-crystal silicon rod; The length (a) of the crystalline silicon wafer is used to determine the length (H) of the single crystal silicon rod, so that the length (H) of the single crystal silicon rod is greater than the length (a) of the strip ...

Embodiment 2

[0040] The preparation method of single crystal silicon wafer is used for preparing strip-shaped right-angle single crystal silicon wafer and single crystal silicon square wafer, comprising the following steps:

[0041]Determine the length (a) and width (b) of the strip-shaped right-angle single-crystal silicon wafer, and the side length (L) of the single-crystal silicon square, and the width (b) of the strip-shaped right-angle single-crystal silicon wafer is smaller than that of the single-crystal silicon square The side length (L) of the sheet; determine the diameter (Φ) of the single crystal silicon rod, and the side length (L) of the single crystal silicon square sheet is smaller than the diameter (Φ) of the single crystal silicon rod; according to the The length (a) of the single crystal silicon rod is used to determine the length (H) of the single crystal silicon rod, so that the length (H) of the single crystal silicon rod is greater than the length (a) of the strip rect...

Embodiment 3

[0046] The preparation method of single crystal silicon wafer is used for preparing strip right-angle single crystal silicon wafer and single crystal silicon quasi-square wafer, comprising the following steps:

[0047] The first ratio is the ratio (L:b) of the side length (L) of the monocrystalline silicon quasi-square wafer to the width (b) of the strip-shaped rectangular monocrystalline silicon wafer;

[0048] The second ratio is the ratio (Φ:b) of the diameter (Φ) of the monocrystalline silicon rod to the width (b) of the strip-shaped rectangular monocrystalline silicon wafer;

[0049] The third ratio is the ratio (a:b) of the length (a) of the strip-shaped right-angle single-crystal silicon wafer to the width (b) of the strip-shaped right-angle single-crystal silicon wafer;

[0050] Determining the width (b) and the first ratio, the second ratio, and the third ratio of the strip-shaped rectangular monocrystalline silicon wafer; the first ratio, the second ratio, and the th...

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Abstract

The invention discloses a method for preparing a single crystal silicon wafer, which can cut a single crystal silicon rod into a strip-shaped right-angle single crystal silicon wafer and a single-crystal silicon quasi-square sheet, or cut a single crystal silicon rod into a strip-shaped right-angle single Crystal silicon wafers and monocrystalline silicon square wafers can improve the utilization rate of monocrystalline silicon rods.

Description

technical field [0001] The invention relates to a preparation method and application of a single crystal silicon chip. Background technique [0002] Monocrystalline silicon quasi-square slices or square slices are cut from single crystal silicon rods. Generally, single crystal silicon rods are cut into squares to obtain quasi-square rods for preparing single crystal silicon quasi-square slices or for preparing single crystal silicon rods. The square bar of the square piece, and then slice the quasi-square bar to make a monocrystalline silicon quasi-square piece, or slice the square bar to make a monocrystalline silicon square piece. [0003] The squaring of monocrystalline silicon ingots will produce side skins, and the side skins are generally returned to the furnace or used as high-efficiency polycrystalline ingot seed crystals, etc., resulting in a low utilization rate of monocrystalline silicon rods. Contents of the invention [0004] The purpose of the present invent...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304
CPCB28D5/00Y02P70/50C30B33/00C30B29/06H01L31/028Y02E10/547
Inventor 孟祥熙曹育红陈涛符黎明
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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