Manufacturing method for nitride light emitting diode

Abstract

The invention provides a manufacturing method for a nitride light emitting diode. The method comprises: using a PVD method to deposit an AIN film layer on a patterned substrate with larger depth, using a CVD method to deposit a nitride epitaxial layer on the AIN film layer, the thickness of the nitride epitaxial layer being relatively thin, through reducing the little stress of the epitaxial layer, improving warping of an epitaxial wafer, so as to improve electrical property uniformity of a single epitaxial wafer; using the patterned substrate with larger depth to improve light extraction efficiency; and mixing high density impurity in an active layer, under the condition of not influencing leakage, the impurity effectively reducing voltage feature, so as to improve integrated yield of the light emitting diode.

Description

technical field [0001] The invention relates to a method for preparing a light-emitting diode, which belongs to the technical field of light-emitting diode manufacture. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, PVD) technology refers to the use of physical methods under vacuum conditions to vaporize the material source—solid or liquid surface into gaseous atoms, molecules or parts of ionization into ions, and through low-pressure gas (or plasma) Body) process, the technology of depositing a thin film with a certain special function on the surface of the substrate. Physical vapor deposition methods mainly include: vacuum evaporation, sputtering coating, arc plasma plating, ion coating, and molecular beam epitaxy, etc.; it can not only deposit metal films, alloy films, but also deposit compounds, ceramics, semiconductors, polymers, etc. Membranes, etc.; this technology has a simple process, less environmental pollution, less consumpti...

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Problems solved by technology

[0004] However, when the conventional metal-organic chemical vapor deposition method (MOCVD method) is used to epitaxially grow LED materials on the surface of the patterned substrate, the depth of the pattern on the surface of the patterned substrate is required to be less than 2 microns. When the depth value is greater than this value, The MOCVD method cannot obtain a good-quality epitaxial film layer; in addition, due to the uneven surface characteristics of the patterned substrate, it is necessary to laminate a thicker buffer layer between the n-type layer and the substrate in the LED structure to make the n-type layer grow. The surface of the previous epitaxial layer reaches the required smooth structure, which is beneficial to the lamination of the subsequent epitaxial layer. However, the thicker underlying structure produces greater stress, which causes the warped LED structure to be larger, which is not conducive to the implementation of subsequent processes (such as subsequent cracks in the manufacturing process), and cause significant differences in the electrical properties of each part of the monolithic LED structure, affecting the growth yield; and due to the quality of the bottom layer, the doping concentration of the active layer is also limited by it, and a higher doping level cannot be obtained , thus limiting the further improvement of the voltage equielectricity

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