Metal-multilayer insulator-metal capacitor as well as preparation method and integrated circuit thereof

A multi-layer insulator, metal capacitor technology, used in semiconductor/solid-state device manufacturing, circuits, electric solid-state devices, etc., can solve the problems of reducing the performance of metal-insulator-metal MOM capacitors, etc. Effect

CN102623305BActive Publication Date: 2015-01-07SHANGHAI HUALI MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2015-01-07

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Abstract

The invention discloses a metal-multilayer insulator-metal capacitor as well as a preparation method and an integrated circuit thereof. The preparation method of the metal-multilayer insulator-metal capacitor disclosed by the invention comprises a dielectric layer providing step used for providing a dielectric layer, a capacitor slot forming step used for forming a capacitor slot of a capacitor in the dielectric layer, a capacitor slot filling step used for filling the capacitor slot with silicon nitride, a capacitor pattern forming step used for patterning the filled silicon nitride so as to form a plurality of silicon nitride pillars, a silicon nitride depositing step used for depositing the silicon nitride on the side walls of the silicon nitride pillars, and a metal filling step used for filling the concave parts in the patterned silicon nitride with metal. According to the invention, the capacitance between the layers and capacitance of the capacitor in the layers can be effectively enhanced, and the electrical characteristics, such as breakdown voltage, leakage current and the like of the metal-multilayer insulator-metal capacitor and the electrical uniformity among devices can be improved.
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Description

technical field

[0001] The present invention relates to the field of semiconductor manufacturing, more specifically, the present invention relates to a method for manufacturing a capacitor with a metal-multilayer insulator-metal structure and a metal-multilayer insulator-metal capacitor made therefrom. In addition, the present invention relates to a An integrated circuit using the resulting metal-multilayer insulator-metal capacitor. Background technique

[0002] Capacitors are important components in integrated circuits and are widely used in memory, microwave, radio frequency, smart card, high voltage and filter chips. A widely used capacitor configuration in chips is metal-insulator-metal (MIM) parallel to the silicon wafer substrate. Among them, the metal is copper, aluminum, etc., whose manufacturing process is easily compatible with the metal interconnection process, and the insulator is a dielectric material with a high dielectric constant (k) such as silicon nitride...

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Embodiment Construction

[0034] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0035] Figure 1 to Figure 8 Each step of the method for manufacturing a metal-multilayer insulator-metal capacitor according to an embodiment of the present invention is schematically shown. Such as Figure 1 to Figure 8 As shown, the metal-multilayer insulator-metal capacitor manufacturing method according to the embodiment of the present invention includes:

[0036] The dielectric layer providing step is used to provide the dielectric layer 1; for example, in a specific embodiment, the low-k value dielectric layer 1 can be formed by a deposition process, and the obtained structure is as follows figure 1 shown.

[0037] A capacitor tank forming step for forming a capacitor tank 11 for forming a capacitor in the dielectric layer 1; for examp...