Method for manufacturing multilayer metal-silicon oxide-metal (MOM) capacitor

Abstract

The invention provides a method for manufacturing a multilayer metal-silicon oxide-metal (MOM) capacitor. The method has the following beneficial effects: the multilayer MOM capacitor is formed by forming a mixed layer of a low-k dielectric and high-k silicon oxide, then utilizing the traditional photoetching and etching processes to form metal grooves in the low-k dielectric and silicon oxide respectively and filling metals into the metal grooves and repeating the previous steps; the MOM capacitor structure is realized in the high-k silicon oxide region and interconnection of the low-k dielectric is realized in other regions; and high-k silicon oxide is formed by circularly carrying out plasma enhanced chemical vapor deposition (PECVD) and oxygen-containing gas treatment so that the silicon-hydrogen bonds in silicon oxide can be effectively removed. Compared with the traditional single k dielectric structure, the method has the following advantages: not only can the capacitance of the capacitor in the layer be effectively improved, but also the electrical characteristics of the MOM capacitor such as breakdown voltage, leakage current and the like and the electrical uniformity among the components are improved.

Description

technical field [0001] The invention relates to the field of microelectronics, in particular to a method for manufacturing a multilayer metal-silicon oxide-metal capacitor. Background technique [0002] Capacitors are commonly used electronic components in integrated circuits, and are also important components of integrated circuits. They can be widely used in memory, microwave, radio frequency, smart card, high voltage and filter chips. Currently, the capacitors widely used in chips are metal-insulator-metal (MIM) capacitors parallel to the silicon substrate. Among them, the metal usually adopts copper, aluminum, etc. that are compatible with the metal interconnection process, and the insulator is mostly a dielectric material with a high dielectric constant (k), silicon oxide or silicon nitride, and the plasma enhanced chemical vapor deposition method (PECVD, Plasma Enhanced Chemical Vapor Deposition) is widely used in thin film deposition in metal interconnection process ...

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Problems solved by technology

[0004] The Chinese patent with the publication number CN101577227A discloses a method for improving the performance of aluminum-silicon nitride-tantalum oxide capacitors. The silicon nitride film is treated with an oxygen-containing gas, and the formed silicon nitride film has less charge, which improves the performance of the silicon nitride film. The electrical thickness and physical thickness of the silicon nitride film are uniform. The MIM capacitor formed by this method has improved in terms of breakdown voltage, leakage current and other electrical characteristics, but it has not obtained high-density capacitors.

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