Manufacturing method of multi-layer metal-silicon oxide-metal capacitor

Abstract

The invention discloses a manufacturing method of a multi-layer metal-silicon oxide-metal capacitor. The manufacturing method comprises the steps of: firstly forming a mixing layer of a low-k-value medium and a high-k-value silicon oxide; conducting photoetching of a convention process to form a metallic channel and a capacitance metallic channel connected with each other in the low-k-value medium and high-k-value silicon oxide respectively, and filling metal in the channels; repeating the steps so as to realize a multi-layer MOM (Mass Optical Memory) capacitor structure in the region of the high-k-value silicon oxide and realize the interconnection of low k values in other regions, wherein the high-k-value silicon oxide is formed by adopting the mode of PECVD (Plasma Enhanced Chemical Vapor Deposition) and nitrogen-contained gas cyclic processing, and silicon-hydrogen bonds in silicon oxide can be removed effectively. Compared with a conventional single-k value medium structure, the manufacturing method provided by the invention has the advantages that the capacitance of a capacitor in a high layer can be improved effectively, the electrical characteristics of breakdown voltage, leakage current and the like of an MOM capacitor are improved, and the electricity uniformity of all the devices is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a multilayer metal-silicon oxide-metal capacitor. Background technique [0002] Capacitors are an important component of integrated circuits and are widely used in memory, microwave, radio frequency, smart cards, high voltage and filter chips. A widely used capacitor configuration in chips is a metal-insulator-metal (MIM) capacitor parallel to the silicon substrate. The metal is copper, aluminum, etc. whose fabrication process is easily compatible with the metal interconnection process, and the insulator is a dielectric material with high dielectric constant (k) such as silicon nitride and silicon oxide. Improving the performance of high-k dielectric materials is one of the main approaches to improve capacitor performance. [0003] Plasma Enhanced Chemical Vapor Deposition (PECVD) is widely used for thin film deposition in metal in...

AI Technical Summary

Problems solved by technology

However, there are still a large number of silicon-hydrogen bonds (Si-H) remaining in the silicon oxide film prepared by this method, which cannot meet the needs of high-performance MOM capacitors.

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