Infrared detector and preparation method thereof

Abstract

The invention relates to an infrared detector and a preparation method thereof. The infrared detector comprises a substrate, a thermosensitive layer, a dielectric layer, an electrode layer and a passivation layer, wherein the thermosensitive layer, the dielectric layer, the electrode layer and the passivation layer are located on the substrate; the dielectric layer is located between the thermosensitive layer and the electrode layer; the thermosensitive layer is located on one side, close to the substrate, of the dielectric layer; the passivation layer is located on one side, away from the substrate, of the electrode layer. The infrared detector comprises a plurality of infrared detector pixels arranged in a matrix, each infrared detector pixel comprises an absorption plate structure, at least two micro-bridge columns and at least two beam structures, and the absorption plate structures are connected to the corresponding micro-bridge columns through the corresponding beam structures; the thermosensitive layer covers the area where the absorption plate structure and the beam structure are located. The material for forming the thermosensitive layer comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium; the passivation layer covers the area where the absorption plate structure is located; and the material for forming the electrode layer at least comprises a titanium-tungsten alloy. According to the technical scheme, the infrared response rate of the infrared detector is improved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an infrared detector and a preparation method thereof. Background technique [0002] Non-contact infrared detectors include, for example, non-contact temperature measurement sensors. The detection principle is that the infrared detector converts the infrared radiation signal emitted by the target object to be measured into a heat signal, and converts the heat signal into an electrical signal through the detector sensitive element, and then The electrical signal is processed and output by the circuit chip, and the infrared detector thus realizes the infrared detection function. [0003] The infrared detector includes an absorbing plate structure and a beam structure. The performance of the absorbing plate structure and the beam structure directly affects the thermal response performance and detection performance of the infrared detector. Generally, the absorbin...

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Problems solved by technology

[0003] The infrared detector includes an absorbing plate structure and a beam structure. The performance of the absorbing plate structure and the beam structure directly affects the thermal response performance and detection performance of the infrared detector. Generally, the absorbing plate structure corresponding to the infrared detector needs to make a separate supporting film layer. To support the absorbing plate structure after the infrared detector releases the sacrificial layer, but the setting of the supporting film layer will lead to an increase in the thickness of the infrared detector absorbing plate structure, which will lead to an increase in the thermal response time of the infrared detector and affect the infrared detection of the infrared detector. performance

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