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High-reflection and high-velvet-degree back electrode based on AlOx/Ag/ZnO structure

A high-reflection, back-electrode technology, applied in the direction of circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problem of low reflectivity, achieve the effect of enhancing scattering ability, improving quantum efficiency, and enhancing reflection ability

Inactive Publication Date: 2013-09-04
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the process of continuing to prepare the Ag film on the Al film, the two are easily alloyed to form Al x Ag 1-x structure, the reflectivity is lower

Method used

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  • High-reflection and high-velvet-degree back electrode based on AlOx/Ag/ZnO structure
  • High-reflection and high-velvet-degree back electrode based on AlOx/Ag/ZnO structure
  • High-reflection and high-velvet-degree back electrode based on AlOx/Ag/ZnO structure

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Embodiment

[0022] An AlO-based x / Ag / ZnO structure of high reflective high-textured back electrode, made of substrate 1, AlO x Thin film 2, Ag thin film 3 and dielectric layer ZnO thin film 4 are composed and form a laminated structure, and the AlO x The film has a large textured structure with a significant effect on long-wave light trapping, AlO x where x is 0x The amount of oxygen introduced in the thin film process determines the value of x. The surface particle size is about 1200nm, and the surface root mean square roughness is 87.4nm; the metal Ag thin film has broad-spectrum domain high reflection characteristics to sunlight, and its surface particle size is 150nm, and the surface root mean square roughness is 24.3 nm; the thickness of the ZnO thin film is 120nm.

[0023] One of the AlO-based x / Ag / ZnO structure of the preparation method of high-reflection high velvet back electrode, the steps are as follows:

[0024] 1) Put the cleaned stainless steel substrate into the magn...

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Abstract

The invention discloses a high-reflection and high-velvet-degree back electrode based on an AlOx / Ag / ZnO structure. The high-reflection and high-velvet-degree back electrode consists of a substrate, an AlOx thin film which has an outstanding long-wave light trapping effect and has a large suede structure, an Ag thin film which has wide-spectral-domain high reflectivity to sunshine and a medium layer ZnO thin film and has a laminated structure. A preparation method comprises the following steps of putting the cleaned substrate into a deposition system, sequentially depositing the AlOx thin film, the Ag thin film and the medium layer ZnO thin film, and manufacturing the composite back electrode based on the AlOx / Ag / ZnO structure. The high-reflection and high-velvet-degree back electrode has the advantages that the composite back electrode with the structure has the high-velvet-degree characteristic caused by the AlOx with the large-suede structure and also has the high reflectivity caused by the Ag thin film; the utilization rate and the conversion efficiency of light in a solar battery can be obviously improved; and the composite back electrode can be widely applied to unijunction and multi-junction laminated solar batteries made of materials such as amorphous silicon, amorphous silicon germanium, microcrystalline silicon, microcrystalline silicon germanium and nanometer silicon.

Description

technical field [0001] The invention relates to a silicon-based thin-film solar cell and its preparation, in particular to an AlO-based x / Ag / ZnO structure of high reflective high-pile back electrode. Background technique [0002] Among silicon-based thin-film solar cells, amorphous silicon (a-Si:H) thin-film solar cells, especially amorphous silicon / microcrystalline silicon stacked solar cells based on amorphous silicon, have great advantages in reducing costs and achieving large-scale production. It has a large space and is favored by the photovoltaic industry. [0003] Silicon-based thin-film solar cells are divided into two structures, the PIN structure when light is incident from a transparent substrate, and the NIP structure when the substrate is only used as a support. PIN type solar cells must be deposited on a transparent substrate, while NIP type solar cells have no requirement for the light transmittance of the substrate, so there is a wider range of choices, st...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/18H01L31/20
CPCY02P70/50
Inventor 侯国付赵静索松魏长春张晓丹赵颖
Owner NANKAI UNIV
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