Amorphous silicon germanium thin-film solar cell having double-layer interface band gap buffer layer

Abstract

The invention discloses an amorphous silicon germanium thin-film solar cell having a double-layer interface band gap buffer layer. The amorphous silicon germanium thin-film solar cell comprises an electrode I, an n-type doped amorphous silicon thin film, an n-i buffer layer, a continuously variable band gap intrinsic (i type) amorphous silicon germanium thin film, an i-p double-layer band gap buffer layer, a p-type doped amorphous silicon thin film and an electrode II which are successively prepared on a substrate; and the electrode I and the electrode II are respectively a bottom electrode and a top electrode of the cell. A digital flowmeter is controlled through a computer, the continuously variable band gap amorphous silicon germanium thin film is prepared, and hole transmission is effectively increased; and, through adoption of the double-layer band gap buffer layer structure, energy band mismatching of a p-type window layer and the amorphous silicon germanium thin film is reduced, and then recombination of carriers at an interface defect state is reduced. Furthermore, the invention provides a method for preparing a micro-nano structure on a back reflection electrode, the optical paths of light rays in the cell can be increased, and then light absorption is increased.

Description

technical field [0001] The invention relates to an amorphous silicon germanium thin-film solar cell structure with a double-layer interface band gap buffer layer, belonging to the technical field of semiconductor manufacturing. Background technique [0002] In recent years, as one of the future new energy utilization methods, photovoltaic cells have been widely used in daily production and life. Crystalline silicon solar cells have high efficiency and stability, so crystalline silicon cells occupy a large market share. However, high-quality silicon wafers are expensive to prepare, and their high quality and fragility increase their transportation costs and installation difficulties. Amorphous silicon thin-film batteries use less materials and lower cost, but the efficiency is still not high, and at the same time, there is a phenomenon of efficiency decay. Therefore, preparing batteries with higher initial efficiency has become a common goal pursued by the field of silicon th...

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Problems solved by technology

However, the problem still exists is that the single-layer material cannot buffer the poor interfacial band gap well, and the interfacial recombination is still extremely serious.

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