Silicon-avalanche photodetector (Si-APD) with black silicon as photosensitive layer and preparation method thereof

Abstract

The invention discloses a silicon-avalanche photodetector (Si-APD) with black silicon as a photosensitive layer and a preparation method of the Si-APD with the black silicon as the photosensitive layer, and belongs to the field of photoelectric detection technology. The Si-APD comprises a silicon intrinsic substrate 1, an N<+> region 2, a P type region 3, an annular N type region 4, an N<+> region black silicon layer 5, a P<+> region 6, an upper electrode 7 and a lower electrode 8, wherein the N<+> region 2 is located in the middle of the upper surface of the silicon intrinsic substrate 1, the P type region 3 is located below the N<+> region, the annular N type region 4 is located on the periphery of the upper surface of the silicon intrinsic substrate, the N<+> region black silicon layer 5 is located on the upper surface of the N<+> region, the P<+> region 6 is located on the lower surface of the silicon intrinsic substrate, the upper electrode 7 is located on the upper surfaces of the N<+> region black silicon layer and the annular N type region, and the lower electrode 8 is located on the lower surface of the P<+> region. According to the Si-PAD, the black silicon material serves as the photosensitive layer, and meanwhile the annular N type region is additionally arranged on the peripheries of the N<+> region and the P type region. Thus, the Si-APD with the black silicon as the photosensitive layer can absorb light waves of a near-infrared band and have higher light absorptivity and a wider response wave band, the preparation technique is simple, the cost is low, and the Si-PAD has the advantages of being easy to integrate, quick in response speed, high in responsivity and wide in response wave band.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and relates to the structure of a photoelectric detection device, in particular to a Si-APD photodetector with a black silicon material as a photosensitive layer and a preparation method thereof. Background technique [0002] As an important part of optical fiber communication system, infrared imaging system, laser warning system and laser ranging system, photoelectric detectors have been widely used in civilian and military applications. APD is a photodetector with internal gain capability and high sensitivity, which is widely used in ultra-high-speed optical communication, signal processing, measurement and sensing systems. APD is a photodetector widely used in modern high-bit-rate optical communication systems. It has been widely used in weak light field measurement, photon Counting and other related fields. Because the APD photodetector has the characteristics of higher inte...

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Problems solved by technology

[0006] Aiming at the above-mentioned prior art, the technical problem to be solved by the present invention is: the InGaAs crystal material has the disadvantages of high price, poor thermomechanical performance, poor crystal quality and difficulty in being compatible with the existing silicon microelectronics process; The band width is large, and the traditional Si-APD photodetector has the disadvantages of low responsivity and limited spectral detection range

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