Si-apd photodetector with black silicon as photosensitive layer and preparation method thereof

Abstract

The invention discloses a Si-APD photodetector with black silicon as a photosensitive layer and a preparation method thereof, belonging to the technical field of photoelectric detection. The photodetector includes a silicon intrinsic substrate 1, an N+ region 2 located in the center of the upper surface of the silicon intrinsic substrate 1, a P-type region 3 located below the N+ region, and an annular N+ region located around the upper surface of the silicon intrinsic substrate. type region 4, the N+ region black silicon layer 5 located on the upper surface of the N+ region, the P+ region 6 located on the lower surface of the silicon intrinsic substrate, the upper electrode 7 located on the upper surface of the N+ region black silicon layer and the ring-shaped N-type region, and the upper electrode 7 located on the upper surface of the P+ region The lower electrode 8 on the lower surface. The invention uses black silicon material as the photosensitive layer, and at the same time adds a ring-shaped N-type region around the N+ region and the P-type region, so that the invention can absorb light waves in the near-infrared band, and has higher light absorption rate and wider response band. The preparation process is relatively simple, the cost is low, and it has the characteristics of easy integration, fast response speed, high responsivity and wide response band.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and relates to the structure of a photoelectric detection device, in particular to a Si-APD photodetector with a black silicon material as a photosensitive layer and a preparation method thereof. Background technique [0002] As an important part of optical fiber communication system, infrared imaging system, laser warning system and laser ranging system, photoelectric detectors have been widely used in civilian and military applications. APD is a photodetector with internal gain capability and high sensitivity, which is widely used in ultra-high-speed optical communication, signal processing, measurement and sensing systems. APD is a photodetector widely used in modern high-bit-rate optical communication systems. It has been widely used in weak light field measurement, photon Counting and other related fields. Because the APD photodetector has the characteristics of higher inte...

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Problems solved by technology

[0006] Aiming at the above-mentioned prior art, the technical problem to be solved by the present invention is: the InGaAs crystal material has the disadvantages of high price, poor thermomechanical performance, poor crystal quality and difficulty in being compatible with the existing silicon microelectronics process; The band width is large, and the traditional Si-APD photodetector has the disadvantages of low responsivity and limited spectral detection range

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