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Silicon-based avalanche photodetector with fluorinated graphene as insulating layer and preparation method thereof

A technology of fluorinated graphene and avalanche optoelectronics, which is applied in the field of photoelectric detection, can solve problems affecting device noise, etc., achieve high optical response, improve time response, and eliminate dead layers.

Active Publication Date: 2016-11-30
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The dark current of the Schottky structure detector is greater than that of the PIN structure device, which affects the noise of the device, which inhibits the development of the Schottky structure detector to a certain extent

Method used

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  • Silicon-based avalanche photodetector with fluorinated graphene as insulating layer and preparation method thereof
  • Silicon-based avalanche photodetector with fluorinated graphene as insulating layer and preparation method thereof
  • Silicon-based avalanche photodetector with fluorinated graphene as insulating layer and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0037] Embodiment 1: the preparation steps of the avalanche photodetector with fluorinated graphene as the insulating layer are as follows:

[0038] (1) On the upper surface of n-type silicon substrate 1, silicon dioxide spacer layer 2 is oxidized and grown, and the resistivity of n-type silicon substrate 1 used is 1~10Ω·cm; The thickness of silicon dioxide spacer layer 2 is 300nm~ 500nm, the growth temperature is 900~1200℃;

[0039] (2) Photoetch the top electrode 5 pattern on the surface of the silicon dioxide isolation layer 2, and then use electron beam evaporation technology to first grow a chromium adhesion layer with a thickness of about 5 nm, and then grow a 50 nm gold electrode;

[0040] (3) On the surface of the silicon dioxide spacer layer 2 grown with the top electrode 5, the silicon dioxide window 3 pattern is photoetched, and then by reactive ion etching technology, using C 4 f 8 Plasma etching the silicon dioxide isolation layer 2 and removing residual silicon...

Embodiment 2

[0047] Embodiment 2: the specific steps of the avalanche photodetector with fluorinated graphene as insulating layer are:

[0048] Steps (1), (2), (3) and (4) are the same as in Example 1.

[0049] (5) preparing and transferring the fluorinated graphene insulating layer 4; the specific steps are as follows:

[0050] (5.1) on the upper surface of top electrode 5, top electrode 5, silicon dioxide spacer 2 and n-type silicon substrate 1 surround the inner surface transfer graphene film 6 of the trapezoidal space that forms; Wherein, transfer graphene film 6 Method is identical with the method for transferring fluorinated graphene insulating layer 4 in embodiment 1 step (5);

[0051] (5.2) The graphene film described in step (5.1) is fluorinated: the sample that transfers the graphene film 6 is put into the vacuum chamber of reactive ion etching system, adopts sulfur hexafluoride (SF 6 ) plasma to fluorinate the surface of the graphene film 6 to form a fluorinated graphene insul...

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Abstract

The invention discloses a silicon-based avalanche photodetector with fluorinated graphene as an insulating layer and a preparation method thereof. The avalanche photodetector includes an n-type silicon substrate, a silicon dioxide isolation layer, a silicon dioxide window, a fluorine graphene insulating layer, top electrode, graphene film and bottom electrode. Fluorinated graphene is a derivative of graphene, and its resistance can reach more than 1TΩ. The present invention uses fluorinated graphene as an insulating layer to make a photodetector, which has very low dark current noise; fluorinated graphene is inserted into graphene and silicon Between, can also reduce the impact of silicon surface state on graphene; Under the action of larger reverse bias, photogenerated carrier and silicon lattice produce collision ionization, obtain very high gain; The present invention uses fluorination The silicon-based avalanche photodetector with graphene as the insulating layer can perform wide-spectrum detection, which solves the problem of low response of traditional silicon-based PIN junctions to ultraviolet light detection.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and relates to the structure of a photoelectric detection device, in particular to a Si-APD photodetector with a graphene / graphene fluoride / silicon (MIS) structure using graphene fluoride as an insulating layer and a preparation method thereof . Background technique [0002] Avalanche photodiodes have the advantages of high sensitivity, high optical response, and fast response speed, and have important applications in high-speed modulation and weak signal monitoring. Optical detectors are widely used in chemical material analysis, medical and health care, space technology and optical communication. Traditional silicon-based PIN junction ultraviolet detector devices require thermal diffusion or ion implantation processes, and there is a dead layer problem for ultraviolet light, and the response decreases rapidly as the wavelength of the incident light decreases. Therefore, there ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/107H01L31/18H01L31/0224H01L31/032
Inventor 徐杨万霞孟楠陆薇阿亚兹王锋施添锦俞滨
Owner ZHEJIANG UNIV
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