53 results about "Molybdenum telluride" patented technology

The invention generally relates to the technical field of two-dimensional material preparation, and provides a confinement chemical vapor deposition preparation method of a two-dimensional molybdenum ditelluride (MoTe2) nano material, which comprises the following steps of: (1) preparing two substrates, and marking the substrates as a substrate A and a substrate B; and carrying out plasma surface treatment on the polished surface of the substrate A; (2) coating the surface of the treated substrate A with a sodium molybdate solution to form a sodium molybdate coating; (3) constructing a confinement growth environment: overlapping the sodium molybdate coating surface of the substrate A and the polished surface of the substrate B in a face-to-face manner, with the substrate B being on the top, to form a laminated substrate with a micron-order slit (1-30 microns); (4) enabling the tellurium powder to be firstly heated into tellurium steam through arrangement of the placement position, and then enabling the tellurium steam and a molybdenum source, rapidly introduced into the heating area, in the laminated substrate to react in a confinement and grow; and (5) sampling: after a quartz tube is cooled to room temperature, taking out the laminated substrate, and obtaining two-dimensional MoTe2 on the surface of the substrate B.

The invention provides a molybdenum ditelluride electrochemical energy storage material, the material is metastable molybdenum ditelluride, and its expression is 1T'-MoTe 2 , the morphology is a nanoflower structure or a nanosphere structure assembled by ultrathin nanosheets. The invention also provides a preparation method and application of the material, using oleylamine as the reducing agent, molybdenum hexacarbonyl or molybdenum pentachloride as the precursor of molybdenum, injecting the tellurium-trioctylphosphine precursor at a certain temperature, and controlling the reaction temperature and reaction time, thereby preparing a metastable hexagonal phase molybdenum ditelluride nanoflower structure or nano spherical structure with uniform size and regular shape. This type of material exhibits excellent supercapacitor energy storage performance and is suitable for the field of new energy development.

The invention discloses a method for preparing molybdenum ditelluride nanotubes. The method comprises the following steps: 1) laying molybdenum hexacarbonyl to the bottom of a ceramic crucible, layinga porous anodic aluminum oxide mold plate with an opening facing downwards on the molybdenum hexacarbonyl, sealing the ceramic crucible, putting into a tubular furnace, performing low-temperature sublimation deposition in the presence of a gas, and continuously performing heating pyrolysis; 2) cooling the vacuum tubular furnace to the room temperature, putting the mold plate with the opening facing downwards into a ceramic crucible with tellurium powder, sealing the ceramic crucible, heating in the presence of the gas, and enabling a single substance, namely tellurium, to react with a metal,namely molybdenum, directly; 3) removing the excessive aluminum oxide mold plate and excessive tellurium by using a diluted acid solution, performing suction filtration treatment, and drying, therebyobtaining a finished product. The method disclosed by the invention is simple in step, free of environment pollution and free of complex equipment, a molybdenum ditelluride nanotube powder material prepared by using the method is good in size controllability, good in crystallinity and uniform in nanotube wall and morphology, and thus the comprehensive properties of a finished product of the molybdenum ditelluride nanotube powder material are greatly improved. The method is wide in applicability and beneficial to large-scale industrial production.

The invention provides a van der Waals heterojunction device which comprises a substrate, a molybdenum telluride nanosheet, a molybdenum disulfide nanosheet and a metal electrode arranged in order from the bottom to top, and the cross-sectional area of the molybdenum telluride nanosheet is larger than that of the molybdenum disulfide nanosheet. According to the van der Waals heterojunction device,the dynamic adjustment of conductive polarity can be achieved. Under different bias voltage conditions, a field effect transistor based on the van der Waals heterojunction device can realize double polarities and an N-type conductivity polarity, and an ultra-high current switching ratio (10<7>) and current rectification ratio (10<6>) and excellent photovoltaic performance are exhibited, and the device can be applied to a novel two-dimensional electronic and optoelectronic device.

The invention discloses a preparation method of flaky semimetal MoTe2: Cu and flaky semimetal MoTe2: Cu / RGO. The preparation method comprises the following steps: adding tellurium powder and potassiumborohydride into deionized water, and carrying out a reaction in a sealed environment to obtain an aqueous Te2-precursor solution; adding ammonium paramolybdate and copper acetate into 10 ml of a solvent, carrying out dissolving, and adding citric acid to obtain a molybdenum ion source precursor solution; putting the aqueous Te2-precursor solution and the molybdenum ion source precursor solutioninto a reaction kettle, keeping the reaction kettle at room temperature, and then performing gradient heating to 155-165 DEG C for a hydrothermal reaction; and carrying out cooling to room temperature, performing filtering, cleaning a filtrate, and drying the filtrate to obtain Cu ion-doped flaky semimetal molybdenum ditelluride and a compound of the Cu ion-doped flaky semimetal molybdenum ditelluride and graphene. The preparation method can be directly used for preparation of metal molybdenum ditelluride of a semi-metal structure, and is simple in preparation process.

The invention discloses a preparation of a molybdenum ditelluride nanowire material and a molybdenum ditelluride nanowire material. A silicon dioxide / silicon chip is used as a substrate, and molybdenum powder and tellurium powder are used as raw materials. Molybdenum ditelluride nanowires are grown on the silicon surface by chemical vapor deposition; the growth container of the molybdenum ditelluride nanowires is a quartz tube, and a mixed gas of argon and hydrogen is introduced into the quartz tube; A quartz test tube is also set, the sealed end of the quartz test tube is opposite to the flow direction of the mixed gas, and the quartz test tube is used to place the substrate for chemical vapor deposition; the flow rate of argon is 100 sccm; the flow rate of hydrogen is 5-30 sccm; the reaction of chemical vapor deposition The temperature is 600-800°C. The process is simple, the cost is low, and the molybdenum ditelluride nanowires are of high quality.

The invention provides an asymmetric van der Waals heterojunction device, comprising graphene nanosheets, hexagonal boron nitride nanosheets, molybdenum disulfide nanosheets, and molybdenum ditelluride nanosheets arranged sequentially from bottom to top; the graphene The nanosheets overlap with the hexagonal boron nitride nanosheets, molybdenum disulfide nanosheets, and molybdenum ditelluride nanosheets; Regions do not overlap with MoTe nanosheets. The invention also provides the preparation and application of the asymmetric van der Waals heterojunction device. The asymmetric van der Waals heterojunction device of the invention can realize the organic unity of ultra-high performance and multiple functions. When operating as a transistor, the device exhibits ultrahigh current switching ratio, ultrasmall subthreshold swing, and pronounced negative transconductance behavior. When operating as a rectifier, the device exhibits an ultrahigh current rectification ratio. When operating as a memory, the device exhibits ultra-high erase / write current ratio and current rectification ratio.

The invention provides a van der Waals heterojunction device, comprising a base, a molybdenum ditelluride nanosheet, a molybdenum disulfide nanosheet and a metal electrode sequentially arranged from bottom to top, and the cross-sectional area of ​​the molybdenum ditelluride nanosheet is larger than The cross-sectional area of ​​the molybdenum disulfide nanosheets. The van der Waals heterojunction device of the invention can realize the dynamic adjustment of the conduction polarity. Under different bias conditions, field-effect transistors based on this van der Waals heterojunction device can achieve bipolar and N-type conduction polarity, respectively, and exhibit an ultrahigh current switching ratio (~10 7 ), current rectification ratio (~10 6 ) and excellent photovoltaic performance, which can be applied in new two-dimensional electronic and optoelectronic devices.

The invention discloses a self-driving two-dimensional molybdenum(IV) telluride homotype heterojunction near infrared electric detector and preparation method thereof. The detector is characterized in that a bottom electrode in ohmic contact with the N type semiconductor substrate is arranged on the lower surface of an N type semiconductor substrate, the upper surface is covered by a mask layer which is made of insulating materials, a through hole is reserved in the center of the mask layer, a two-dimensional molybdenum(IV) telluride film is deposited in the through hole and is contacted with the N type semiconductor substrate to form an N-N homotype heterojunction, and the upper surface of the molybdenum(IV) telluride film is provided with a top electrode in ohmic contact with the molybdenum(IV) telluride. The near infrared electric detector is simple in preparation process, mature and reliable in technology, easy to control, and the obtained device has excellent performances of high sensitivity, high speed, high detectability, and self-driving.