Topological insulator/molybdenum ditelluride heterojunction-based phototransistor, and production method and application thereof

A technology of topological insulator and phototransistor, applied in circuits, electrical components, semiconductor devices, etc., to achieve the effects of high electron mobility, gate voltage controllability, low bias voltage control, and high sensitivity

Pending Publication Date: 2022-01-21
SOUTH CHINA NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, few bipolar layered materials such as black ph...

Method used

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  • Topological insulator/molybdenum ditelluride heterojunction-based phototransistor, and production method and application thereof
  • Topological insulator/molybdenum ditelluride heterojunction-based phototransistor, and production method and application thereof
  • Topological insulator/molybdenum ditelluride heterojunction-based phototransistor, and production method and application thereof

Examples

Experimental program
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Embodiment 1

[0041] 1. SiO 2 / Si substrate is ultrasonicated with acetone, isopropanol, and deionized water for 10 minutes each, and dried with a nitrogen gun;

[0042] 2. With SiO 2 / Si as the substrate and the semiconductor 2H-MoTe prepared by the tape stripping method 2 Nanosheets, 2H-MoTe with a thickness of 10-70nm selected by optical microscope 2 Nanosheets;

[0043] 3. Evaporate 2nm Ti / 2nmAu onto SiO by electron beam evaporation 2 / Si substrate, the Bi 2 Se 3 The blue tape adheres rapidly to the above Ti / Au SiO 2 / Press on the Si substrate for 1-2 minutes, and slowly peel off to obtain bright-colored Bi 2 Se 3 ; Then by polyvinyl alcohol (PVA) / polymethyl methacrylate (PMMA) transfer method and gold etching solution (KI:I 2 :H 2 The mass ratio of O=4:1:40) to Bi 2 Se 3 Perform transfer and cleaning treatment to obtain a topological insulator Bi with a thickness of 5-300nm 2 Se 3 Nanosheets, Bi with a thickness of about 12nm selected by optical microscopy 2 Se 3 Nanos...

Embodiment 2

[0052] The difference from Example 1 is: the selected Bi 2 Se 3 The thickness is about 24.8nm, MoTe 2 The thickness is 26.9nm. Figure 9 For the Bi prepared in Example 2 2 Te 3 / 2H-MoTe 2 Optical microscope pictures and electrical performance tests of heterojunction phototransistors. Where (a) is the measured overlapping area of ​​the heterojunction is 234μm 2 , 2H-MoTe 2 Above, Bi 2 Se 3 Below; (b) is Bi 2 Te 3 / 2H-MoTe 2 The current-voltage curve of a heterojunction phototransistor, known as MoTe 2 Anode (Drain), Bi 2 Se 3 Connected to the cathode (Source), it shows that the heterojunction phototransistor exhibits significant reverse rectification behavior, and the rectification ratio (-3 / 3V) is 30. Figure 10 For Bi in Example 2 2 Te 3 / 2H-MoTe 2 The atomic force microscope image of the heterojunction phototransistor, it can be known that Bi 2 Se 3 The thickness is about 24.8nm, 2H-MoTe 2 The thickness is about 26.9nm, indicating that the prepared Bi 2...

Embodiment 3

[0054] The difference from Example 1 is: the selected Bi 2 Se 3 The thickness is about 5.87nm, 2H-MoTe 2 The thickness is about 15.7nm. Figure 11 For the Bi prepared in Example 3 2 Te 3 / 2H-MoTe 2 Optical microscope pictures and electrical performance tests of heterojunction phototransistors. Where (a) is the measured overlapping area of ​​the heterojunction is 20 μm 2 , 2H-MoTe 2 Above, Bi 2 Se 3 Below; (b) the picture shows Bi 2 Te 3 / 2H-MoTe 2 The current-voltage curve of a heterojunction phototransistor, known as MoTe 2 Connect to cathode (Source), Bi 2 Se 3 Connected to the anode (Drain), it shows that the heterojunction phototransistor exhibits significant reverse rectification behavior, and the rectification ratio (-3 / 3V) is 57. Figure 12 For Bi in Example 3 2 Te 3 / 2H-MoTe 2 The atomic force microscope image of the heterojunction phototransistor, it can be known that Bi 2 Se 3 The thickness is about 10.2nm, 2H-MoTe 2 The thickness is about 21.5nm...

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Abstract

The invention belongs to the technical field of multifunctional phototransistors, and discloses a topological insulator/molybdenum ditelluride heterojunction-based phototransistor, and a production method and an application thereof. According to the heterojunction-based phototransistor, a prepared topological insulator nanosheet is transferred on a SiO2/Si substrate, then a 2H-MoTe2 nanosheet is transferred to the topological insulator nanosheet, and a vertical Van der Waals heterojunction is formed at the overlapped part of the topological insulator nanosheet and the 2H-MoTe2 nanosheet. Metal bonding layers/Au electrodes are evaporated on the 2H-MoTe2 nanosheet and the topological insulator nanosheet respectively, and annealing treatment is carried out in protective gas at the temperature of 150-300 DEG C. The heterojunction provided by the invention realizes a unique carrier tunneling transport mechanism, and has good photoelectric response performance in a wide-spectrum wave band range of 405-1550nm. The method can be used in the field of logic loop devices or visible-near infrared light response photoelectric devices.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional material van der Waals heterojunction, more specifically, relates to a topological insulator / molybdenum ditelluride (2H-MoTe 2 ) heterojunction phototransistor and its preparation method and application. Background technique [0002] Bi 2 Se 3 Novel three-dimensional topological insulators (TIs) have a rhombohedral hexagonal crystal structure, are environmentally stable, non-toxic, and have energy band inversions caused by strong spin-orbit coupling effects. It reveals the unique physics of locked spin-momentum and narrow direct bandgap insulator states with time-reversal-breaking symmetry metallic surface states. Meanwhile, originating from the suppressed Dirac fermion backscattering mechanism, n-type conductive layered Bi 2 Se 3 Efficient charge transport performance can be achieved (with 10 3 ~10 4 cm 2 / V·s high electron mobility). Similar to other layered materials, Bi stacke...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/113H01L31/18
CPCH01L31/032H01L31/113H01L31/18Y02P70/50
Inventor 高伟岳倩蓝志彬但智颖李京波
Owner SOUTH CHINA NORMAL UNIVERSITY
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