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Photoelectric detector based on rhenium diselenide and molybdenum telluride heterojunction and preparation method thereof

A technology of photodetectors and rhenium diselenide, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as limited light absorption range

Pending Publication Date: 2022-07-15
TAISHAN UNIV +1
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  • Claims
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Problems solved by technology

For this reason, the present invention proposes a photodetector based on the heterojunction of rhenium diselenide and molybdenum ditelluride, which can realize interlayer transition excitation and effectively solve the problem that the light absorption range of a single rhenium diselenide photodetector is limited problems, thereby improving the photoelectric performance of photodetectors

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  • Photoelectric detector based on rhenium diselenide and molybdenum telluride heterojunction and preparation method thereof
  • Photoelectric detector based on rhenium diselenide and molybdenum telluride heterojunction and preparation method thereof
  • Photoelectric detector based on rhenium diselenide and molybdenum telluride heterojunction and preparation method thereof

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[0048]The following describes in detail the embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary, only used to explain the present invention, and should not be construed as a limitation of the present invention.

[0049] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present invention and simplifying the description, It is not intended to indicate or imply that the device or element referred to must have a particular orientation, be constructed a...

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Abstract

The invention discloses a rhenium diselenide and molybdenum ditelluride heterojunction-based photoelectric detector and a preparation method thereof, the photoelectric detector comprises a SiO2 / Si substrate, a rhenium diselenide nanosheet, a molybdenum ditelluride nanosheet and a metal electrode, the rhenium diselenide nanosheet and the molybdenum ditelluride nanosheet are arranged on the surface of the SiO2 / Si substrate, and the metal electrode is arranged on the surface of the rhenium diselenide nanosheet and the molybdenum ditelluride nanosheet. The surface of the rhenium diselenide nanosheet and the surface of the molybdenum ditelluride nanosheet are partially overlapped to form a rhenium diselenide and molybdenum ditelluride heterojunction, and light current is generated when the heterojunction is illuminated, so that optical detection is realized, type-II type staggered energy band arrangement is met, interlayer transition excitation can be realized, and the detection sensitivity is improved. The rhenium diselenide photoelectric detector effectively solves the problem that the light absorption range of a single rhenium diselenide photoelectric detector is limited, so that the photoelectric property of the photoelectric detector is improved, wide-spectrum photoelectric detection from visible light to a short-wave infrared region can be realized, and the light response range is wider.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a photodetector based on a heterojunction of rhenium diselenide and molybdenum ditelluride and a preparation method thereof. Background technique [0002] Broadband infrared photodetectors have extensive and important applications in many fields such as communications, imaging, biomedical optics, remote sensing, and military. Traditional infrared photodetectors often have complex manufacturing processes, high costs, and certain requirements for the working environment. Therefore, processing The fabrication technology of high-performance broadband infrared photodetectors with simple process and low cost remains to be developed. [0003] In the related art, rhenium diselenide (ReSe 2 ), as a layered two-dimensional material, has good optoelectronic properties and excellent time stability, and its characteristics are favored in the field of photodetectors. Compared...

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Application Information

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IPC IPC(8): H01L31/109H01L31/032H01L31/0392H01L31/18
CPCH01L31/109H01L31/0321H01L31/18H01L31/0392
Inventor 肖静高志刚王聪朱文标林志滔
Owner TAISHAN UNIV
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