Molybdenum telluride-based memristor and preparation method thereof and nonvolatile memory

Abstract

The invention belongs to the related technical field of semiconductor storage, and discloses a molybdenum telluride-based memristor and a preparation method thereof, and a nonvolatile memory, the memristor comprises a top electrode, a resistive layer and a bottom electrode which are arranged from top to bottom, the resistive layer is located between the top electrode and the bottom electrode, andthe resistive layer is a molybdenum telluride sheet which is a two-dimensional molybdenum telluride sheet subjected to argon plasma treatment; tellurium vacancies are introduced into the surface of the molybdenum telluride sheet through argon plasma treatment, so that the energy of phase transformation of molybdenum telluride from a 2H phase to a 1T' phase is reduced, and the phase transformationof molybdenum telluride from the 2H phase to the 1T' phase is easier to occur; and according to the invention, the phase transformation between the molybdenum telluride 2H and the molybdenum telluride1T' is easier to occur, the operation voltage of the phase transformation is reduced, the transformation speed is improved, and the cycle life is prolonged at the same time.

Description

technical field [0001] The invention belongs to the technical field related to semiconductor storage, and more specifically relates to a memristor based on molybdenum telluride, a preparation method thereof, and a nonvolatile memory. Background technique [0002] Since Hewlett-Packard verified the existence of memristors experimentally in 2008, memristors have developed rapidly. Especially in the field of storage, memristors are considered to be one of the most potential three-dimensionally integrated high-density memory candidates due to their simple structure, high storage density, low power consumption, fast erasing and writing speed, and long life. . [0003] The resistance switching of the mainstream memristors currently reported is mostly based on the formation and fusing process of metal (silver or copper) or oxygen vacancy conductive filaments, which involves the migration of ions in the resistance switching layer. It is worth noting that the formation and fusing p...

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Problems solved by technology

[0004] Aiming at the above defects or improvement needs of the prior art, the present invention provides a memristor based on molybdenum telluride and its preparation method, and a nonvolatile memory. The resistive layer of the memristor is processed by argon plasma Two-dimensional molybdenum telluride sheet, in this way, argon plasma treatment is used to introduce tellurium vacancies on the molybdenum telluride sheet, thereby reducing the energy of molybdenum telluride from 2H phase to 1T' phase transition, making molybdenum telluride from 2H phase to 1T' The phase transition is easier to occur, and under the action of voltage, the molybdenum telluride sheet will undergo a reversible phase transition from 2H phase to 1T' phase, so that the resistance of the memristor will change from high to low resistance states, and based on this phase transition process, The memristor exhibits ultra-fast erasing and writing speed, excellent retention and long cycle life, and the memristor effectively solves the problems that the current memristor cannot improve the erasing and writing speed and the cycle life is insufficient

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