Molybdenum telluride-based memristor and preparation method thereof and nonvolatile memory

A technology of memristor and molybdenum telluride, which is applied in the direction of electrical components, can solve the problems of unable to increase the erasing and writing speed, insufficient cycle life, and reduce the energy of molybdenum telluride, etc., and achieve excellent high and low resistance retention, long cycle life, easy-to-use effects

Active Publication Date: 2021-02-05
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the above defects or improvement needs of the prior art, the present invention provides a memristor based on molybdenum telluride and its preparation method, and a nonvolatile memory. The resistive layer of the memristor is processed by argon plasma Two-dimensional molybdenum telluride sheet, in this way, argon plasma treatment is used to introduce tellurium vacancies on the molybdenum telluride sheet, thereby reducing the energy of molybdenum telluride from 2H phase to 1T' phase transition, making molybdenum telluride from 2H phase to 1T' The phase transition is easier to occur, and under the action of voltage, the molybdenum telluride sheet will undergo a reversible phase transition from 2H phase to 1T' phase, so that the resistance of the memristor will change from high to low resistance states, and based on this phase transition process, The memristor exhibits ultra-fast erasing and writing speed, excellent retention and long cycle life, and the memristor effectively solves the problems that the current memristor cannot improve the erasing and writing speed and the cycle life is insufficient

Method used

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  • Molybdenum telluride-based memristor and preparation method thereof and nonvolatile memory
  • Molybdenum telluride-based memristor and preparation method thereof and nonvolatile memory

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Embodiment 1

[0033] The structure of the memristor based on the 2H to 1T' phase transition of molybdenum telluride provided in this embodiment is as follows figure 1 As shown, it includes a substrate, a bottom electrode, a top electrode and a resistive switch layer, the bottom electrode is located on the substrate, and the resistive switch layer is located between the bottom electrode and the top electrode.

[0034] In this embodiment, the substrate is a silicon substrate; the bottom electrode is gold and titanium, the thickness of gold is 10nm, and the thickness of titanium is 5nm. Titanium is in contact with the silicon substrate as an adhesion layer, and gold is on the titanium; the top electrode is gold and titanium. The thickness of gold is 50nm, the thickness of titanium is 10nm, the titanium is in contact with the resistive layer below, and the gold is on the titanium; the resistive layer is a two-dimensional molybdenum telluride sheet with a thickness between 5nm and 15nm.

[0035]...

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Abstract

The invention belongs to the related technical field of semiconductor storage, and discloses a molybdenum telluride-based memristor and a preparation method thereof, and a nonvolatile memory, the memristor comprises a top electrode, a resistive layer and a bottom electrode which are arranged from top to bottom, the resistive layer is located between the top electrode and the bottom electrode, andthe resistive layer is a molybdenum telluride sheet which is a two-dimensional molybdenum telluride sheet subjected to argon plasma treatment; tellurium vacancies are introduced into the surface of the molybdenum telluride sheet through argon plasma treatment, so that the energy of phase transformation of molybdenum telluride from a 2H phase to a 1T' phase is reduced, and the phase transformationof molybdenum telluride from the 2H phase to the 1T' phase is easier to occur; and according to the invention, the phase transformation between the molybdenum telluride 2H and the molybdenum telluride1T' is easier to occur, the operation voltage of the phase transformation is reduced, the transformation speed is improved, and the cycle life is prolonged at the same time.

Description

technical field [0001] The invention belongs to the technical field related to semiconductor storage, and more specifically relates to a memristor based on molybdenum telluride, a preparation method thereof, and a nonvolatile memory. Background technique [0002] Since Hewlett-Packard verified the existence of memristors experimentally in 2008, memristors have developed rapidly. Especially in the field of storage, memristors are considered to be one of the most potential three-dimensionally integrated high-density memory candidates due to their simple structure, high storage density, low power consumption, fast erasing and writing speed, and long life. . [0003] The resistance switching of the mainstream memristors currently reported is mostly based on the formation and fusing process of metal (silver or copper) or oxygen vacancy conductive filaments, which involves the migration of ions in the resistance switching layer. It is worth noting that the formation and fusing p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/231H10N70/8828H10N70/011Y02D10/00
Inventor 杨蕊何慧凯江勇波黄腾
Owner HUAZHONG UNIV OF SCI & TECH
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