Non-volatile multitime programmable memory

A non-volatile, memory technology, applied in the field of memory, can solve problems such as inability to perform erasing operations, and achieve the effects of improving programming speed, good compatibility, and high electron injection efficiency

Inactive Publication Date: 2014-09-17
ACUTI MICROSYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage of this structure is that it cannot be erased and can only be used as a one-time programmable memory

Method used

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  • Non-volatile multitime programmable memory
  • Non-volatile multitime programmable memory
  • Non-volatile multitime programmable memory

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Embodiment Construction

[0028] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0029] figure 2 It is a schematic structural diagram of a non-volatile multi-time programmable memory according to an embodiment of the present invention; as shown in the figure, the memory includes: a first storage unit 311, a second storage unit 313, a differential latch amplifier 312, and a first read operation control The switch 307 and the second read operation control switch 308, where:

[0030] The first storage unit 311 and the se...

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Abstract

The invention discloses a nonvolatile multitime programmable memory, the memory includes a first storage unit, a second storage unit, a differential latch amplifier, a first read operation control switch and a second read operation control switch, wherein the first storage unit and the second storage unit are in differential connection, the output terminal of the first storage unit and the output terminal of the second storage unit are respectively connected with one input end of the differential latch amplifier, one end of the first read operation control switch and one end of the second read operation control switch are respectively connected with one output end of the differential latch amplifier, the other end of the first read operation control switch and the other end of the second read operation control switch are respectively connected with the ground; the first storage unit and the second storage unit respectively include a memory transistor, each memory transistor is a single-layer polysilicon floating gate transistor, and programming operation or erase operation of the first storage unit and the second storage unit are performed by injection of electrons into a floating gate or pulling of electrons out of the floating gate.

Description

Technical field [0001] The present invention relates to the field of memory, in particular to a non-volatile multi-time programmable memory. Background technique [0002] Non-volatile memory refers to a memory that can retain stored data for a long time without disappearing after the power is turned off. Therefore, non-volatile memories are widely used in various fields. [0003] Non-volatile memory can be roughly divided into read-only memory and erasable memory according to different ways of reading and writing. Our commonly used flash memory (FLASH) is a type of rewritable memory. Information storage is realized by changing the current drive capability of the core semiconductor transistor of the memory. For example, the cell storage information "1" means that the current drive capability of the core semiconductor transistor is relatively small or even has no current drive capability. The current drive capability of a semiconductor transistor is related to the threshold volta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06G11C16/02
Inventor 孙丽娜杨少军
Owner ACUTI MICROSYST
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