Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of low control gate coupling rate and high operating voltage, and achieve high control gate coupling rate and low operating voltage. , the effect of fast storage

Inactive Publication Date: 2014-07-09
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The semiconductor memory proposed in Chinese patent 201010254185.0 has a low

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0039] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. In the drawings, the thicknesses of layers and regions are exaggerated for convenience of illustration, and the shown sizes do not represent actual sizes. The referenced figures are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated in the figures but are to include resulting shapes, such as manufacturing-induced deviations. For example, the curves obtained by etching are usually curved or rounded, but in the embodiment of the present invention, they are all represented by rectangles. The representation in the figure is schematic, but this should not be considered as limiting the scope of the present invention. Meanwhile, in the following description, the term substrate used can be understoo...

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Abstract

The invention belongs to the technical field of semiconductor memories, and particularly relates to a semiconductor device which comprises at least one semiconductor substrate, a source region, a drain region, a floating gate, a control gate and a grid-control p-n junction diode used for connecting the floating gate and the substrate. The semiconductor device is used for storing information of the floating gate and charging and discharging the floating gate through the grid-control p-n junction diode, and has the advantages that coupling efficiency of the control gate is high, and operation voltage in storage of data is low. By means of the semiconductor device, quick storage and compatible manufacturing of logic devices and flash memory devices can be achieved.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a planar channel semiconductor device and a manufacturing method thereof, and belongs to the technical field of semiconductor memory. Background technique [0002] Semiconductor memories are widely used in various electronic products. Different application areas place different requirements on the structure, performance and density of semiconductor memories. For example, static random access memory (SRAM) has high random access speed and low integration density, while standard dynamic random access memory (DRAM) has high density and medium random access speed. [0003] figure 1 It is a semiconductor memory proposed in Chinese patent 201010254185.0, and 301 shown is a substrate, which can be single crystal silicon or silicon on insulator, and is doped with low-concentration n-type or p-type impurities. Shown 302 and 303 are the source region and the d...

Claims

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Application Information

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IPC IPC(8): H01L27/115H01L21/8247
Inventor 刘磊刘伟王鹏飞
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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