Preparation method of semimetal phase molybdenum telluride based on mild hydrogen plasma

Abstract

The invention relates to a preparation method of semimetal phase molybdenum telluride based on a mild hydrogen plasma. The preparation method comprises the following steps: placing a semiconductor phase molybdenum telluride thin layer sample in a plasma chamber; introducing H2 under a low pressure environment, and opening an inductive antenna radio-frequency power source to excite a capacitively coupled plasma; and carrying out plasma modification treatment on the semiconductor phase molybdenum telluride thin layer sample. According to the preparation method of the semimetal phase molybdenum telluride based on the mild hydrogen plasma provided by the method, the phase change degree of the MoTe2 is regulated and controlled at normal temperature, the reaction conditions are mild, the operation is simple, the controllability is strong, the phase change is uniform, the large-area phase change can be realized, and the practicability is high.

Description

technical field [0001] The invention belongs to the technical field of semi-metal materials, in particular to a method for preparing semi-metal phase molybdenum telluride based on mild hydrogen plasma. Background technique [0002] Since the discovery of single-layer graphene in 2004, the research on two-dimensional layered semiconductor materials has attracted worldwide attention. After more than ten years of exploration, the family of two-dimensional materials has been continuously expanded, among which MoTe 2 Due to its small bandgap (0.9eV) and tunability, it is an ideal material for near-infrared photodetection. MoTe 2 The transition between the semiconductor phase and the metal phase can be achieved through external effects, and the formation of the metal phase can transform MoTe 2 As an electrode itself, it reduces the potential barrier between the electrodes and improves the electrical performance of the device. At the same time, it can also realize the preparati...

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Problems solved by technology

However, this phase change is reversible, and the phase is easy to recover during the cooling process, so there will be mixed-phase MoTe 2 Material; at the same time, the temperature required for the processing process is very high, which is easy to cause damage to the sample structure, and the controllability is poor

“Post-patterning of an electronic homojunction in atomically thin monoclinic MoTe 2 [2D Materials 2017,4,024004]"This document introduces the method of laser ablation to obtain 1T' phase MoTe 2 However, the laser ablation process is generally limited to a small area. If a large-area phase transition is required, line or area scanning processing is required, and it is difficult to obtain a uniform phase transition.

“Room temperature semiconductor-metal transition ofMoTe 2 thin films engineered by strain[Nano Letters 2015,16,188]” This document obtains 1T’ phase MoTe by applying stress 2 , however, the method adopted in this paper through the probe and requires precise control of the applied force is more complicated and less operable

“Structural phase Stability control of monolayer MoTe 2 with adsorbed atoms and molecules[Journal of Physical Chemistry C 2015,119,21674]” is used to obtain the 1T’ phase MoTe by making a single layer of molybdenum telluride adsorb common atoms 2 , or by adsorbing molecules to obtain 2H-phase MoTe 2 , this method also has problems such as complicated operation and poor controllability, and cannot achieve stable phase transition

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