Method for growing single-layer telluride doping structure through impulse type injection of reactants

A pulsed injection and reactant technology, applied in coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of immature preparation process, low yield, unsuitable for large-area production, etc., and achieve growth conditions. Accurate and controllable, simple and convenient operation, broad application prospects

Inactive Publication Date: 2020-03-06
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

The former is the most traditional method for preparing two-dimensional materials. The preparation method is simple and the samples obtained have fewer defects, but the yield is low and it is not suitable for large-scale production.
The latter is the most effective method for preparing large-area and high-quality crystalline molybdenum ditelluride, which has advantages in size, layer number and physical property control, but the preparation process is not yet mature

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] A clean silicon substrate of 100 square centimeters is placed in the deposition reaction chamber, the reaction pressure is controlled at 300 torr, and the reaction temperature is 900°C; the carrier gas is pulsed into the chamber to inject molybdenum hexacarbonyl tungsten hexacarbonyl and diethyl tellurium, Set the carrier gas flow rate to 500 cubic centimeters per second, the pulse injection time of molybdenum hexacarbonyl to 1 minute, the pulse injection time of tungsten hexacarbonyl to 7 seconds, and the pulse injection time of diethyl tellurium to 3 minutes. A total of 200 cycles were injected, and the deposition obtained Monolayer Mo 0.9 W 0.1 Te 2 .

Embodiment 2

[0013] A clean silicon substrate of 6 square centimeters was placed in the deposition reaction chamber, the reaction pressure was controlled at 40 torr, and the reaction temperature was 600°C; the carrier gas was injected into the chamber in a pulsed manner, molybdenum hexacarbonyl tungsten hexacarbonyl and diethyl tellurium, Set the carrier gas flow rate to 60 cubic centimeters per second, the pulse injection time of molybdenum hexacarbonyl to 30 seconds, the pulse injection time of tungsten hexacarbonyl to 10 seconds, and the pulse injection time of diethyl tellurium to 2 minutes. A total of 400 cycles were injected, and the deposition obtained Monolayer Mo 0.8 W 0.2 Te 2 .

Embodiment 3

[0015] Place a 54 square centimeter clean silicon substrate in the deposition reaction chamber, control the reaction pressure at 230 Torr, and the reaction temperature at 710°C; pulse molybdenum hexacarbonyl, diethylsulfur and diethyl For tellurium, set the carrier gas flow rate to 80 cubic centimeters per second, the pulse injection time of molybdenum hexacarbonyl to 1 minute, the pulse injection time of diethylsulfur to 30 seconds, and the pulse injection time of diethyl tellurium to 4 minutes, and a total of 800 cycles of injection , the deposition of monolayer MoS 0.4 Te 1.6 .

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Abstract

The invention discloses a method for growing a single-layer telluride doping structure through impulse type injection of reactants. According to the method, a plurality of transition metal organics and diethyl tellurium or molybdenum hexacarbonyl and a plurality of chalcogens are injected simultaneously to control the carrier gas flow to control the amount of telluride doping, the reaction temperature and the reaction time are controlled to control the area and the number of layers of telluride growth, and thus high-quality molybdenum ditelluride with the doping structure is obtained. The method has the advantages that growth conditions are precise and controllable, operation is easy and convenient, and the stable molybdenum ditelluride with the single-layer doping structure can be prepared. The prepared molybdenum ditelluride with the single-layer doping structure has broad application prospects in the fields of nano-electronical appliances, lubricating materials, photocatalysis and the like.

Description

technical field [0001] The invention belongs to the field of material preparation and relates to nanometer material preparation technology, in particular to a method for growing a single-layer telluride doped structure by injecting reactants in a pulsed manner. Background technique [0002] Since Novoselov and Geim and their collaborators successfully stripped graphene from graphite using adhesive tape in 2004, the research on two-dimensional materials has entered a period of rapid development. At the same time, graphene and graphene-like materials have further enriched The family of two-dimensional materials, such as two-dimensional transition metal chalcogenides, its excellent physical and chemical properties, unique thermoelectric, conductive, superconducting, optical, photovoltaic properties make it widely used in optical materials, storage materials, catalytic materials and semiconductor optoelectronic materials etc. have broad application prospects. [0003] Although ...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/455
CPCC23C16/305C23C16/45557
Inventor 袁梦辉陈鑫孙艳戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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