45 results about "Interchalcogen" patented technology

A quantum dots light emitting diode is provided. The quantum dots light emitting diode includes a first electrode layer; an electron transport layer on the first electrode layer; and a quantum dots layer on a side of the electron transport layer away from the first electrode layer. The electron transport layer includes a gradient alloy composite sub-layer including an electron transport oxide material and an electron transport non-oxide chalcogen-containing material. The non-oxide chalcogen is selected from a group consisting of sulfide ion, selenium ion, and tellurium ion. The electron transport non-oxide chalcogen-containing material has a gradient distribution such that a content of the electron transport non-oxide chalcogen-containing material decreases along a direction from the quantum dots layer to the first electrode layer.

Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeOx channel layer according to the present disclosure exhibits excellent output / transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on / off current ratio of ˜107.

A grease composition that includes at least an oil-based medium, a thickener, and a fullerene-like nano-structure. The fullerene-like nano-structure includes a plurality of layers each comprised of a metal chalcogenide composition has a molecular formula of MX2, where M is a metallic element selected from the group consisting of titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg) and combinations thereof, and X is a chalcogen element selected from the group consisting of sulfur (S), selenium (Se), tellurium (Te), oxygen (O) and combinations thereof.

A semiconductor nanoparticle, a method for producing the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle. The semiconductor nanoparticle includes a template crystal including a zinc chalcogenide and is cadmium-free. The template crystal includes zinc-chalcogen bilayers stacked in a [111] direction. In high-resolution scanning transmission electron microscopy analysis, the template crystal includes a first zone, a second zone, and a mirror zone disposed between the first zone and the second zone. The mirror zone includes at least one mirror plane where a reversal occurs in the atomic arrangement direction of zinc and chalcogen elements between adjacent zinc-chalcogen bilayers. In the zinc-chalcogen bilayers of the first zone, zinc atoms and chalcogen element atoms are arranged in a first direction. In the zinc-chalcogen bilayers of the second zone, zinc atoms and chalcogen element atoms are arranged in a second direction.

This invention provides a method for preparing two-dimensional TMDs alloys using non-metallic chalcogenides. It is a modified CVD method in which a non-metallic chalcogenide containing two chalcogen elements replaces the elemental chalcogenides as the non-metallic growth source. The ratio of the two chalcogen elements in the TMDs alloy can be changed by adjusting the weight ratio of the non-metallic growth source to the metallic growth source. Adding 40 mg of WO3 and 55, 38, 26, and 15 mg of SeS2 respectively yielded WS... 0.96 Se 0.04 WS 0.65 Se 0.35 WS 0.5 Se 0.5 WS 0.27 Se 0.73 Four types of TMD alloy single crystals can be fabricated. Large-size single crystals and large-area thin films of two-dimensional TMD alloys with tunable chemical composition and uniform layer number can be prepared. This provides more options for optoelectronic devices with specific spectral responses, field-effect transistors, and flexible electronic devices.

A method for adjusting the wide spectrum detection of transition metal chalcogenides by using vacancy defects belongs to the field of two-dimensional materials. In the method, transition metal oxides are used as metal sources, two different chalcogen elements are used as sulfur sources, and a single-layer ternary transition metal chalcogen compound with uniform element distribution is grown by using a chemical vapor deposition method. By using the difference in the stability of the chemical bonds between alloy elements, the unstable chemical bonds are broken by hydrogen-assisted annealing, and the generated chalcogen element vacancy defects are uniformly distributed in the ternary transition metal chalcogen compound. The chalcogen element vacancy defects introduce defect energy levels between the conduction band and the valence band of the transition metal chalcogen compound, generate new photoluminescence peaks, and widen the spectrum detection range. The experimental method is simple in process, good in repeatability, can accurately control the type, distribution and number of defects, and is suitable for large-scale production.

A method of forming a material film includes providing a non-photosensitive mask on a substrate to expose a partial region of the substrate, forming a material film on the partial region of the substrate using a sputtering process, removing the non-photosensitive mask, and heat-treating the substrate and the material film from which the non-photosensitive mask is removed under a first gas atmosphere. The material film includes a transition metal and a chalcogen element. The sputtering process may include an RF magnetron sputtering process. The heat treatment may be performed at a higher temperature than a temperature of the forming the material film.

The disclosure relates to a method of producing an intrinsic or doped transition metal dichalcogenide film comprising: providing a substrate in a deposition chamber; providing a reducing environment and an excess of chalcogen in the deposition chamber; and forming the intrinsic or doped transition metal dichalcogenide film on a surface of the substrate. The transition metal may be Mo or W, and the chalcogen may be S, Se, or Te. The reducing environment may be a hydrogen rich environment.

A vapor deposition system is described. The vapor deposition system includes a reaction chamber and a reactant delivery subsystem coupled with the reaction chamber. The reaction chamber is configured to retain a substrate therein. The reactant delivery subsystem includes inlets, a pre-reaction region, and outlets. The inlets receive precursors and chalcogen precursor(s). The pre-reaction region is configured to receive the precursors from a portion of the inlets and to react at least a portion of the precursors to form modified precursor(s). The modified precursor(s) are more thermally stable than metal-containing precursor(s) of the precursors used to form the modified precursor(s). The outlets are coupled with the reaction chamber and the pre-reaction region. The outlets separately provide the modified precursor(s) and the chalcogen precursor(s) to the reaction chamber. The modified precursor(s) and the chalcogen precursor(s) react and form a chalcogen film on the substrate in the reaction chamber.

A hydrodesulfurization or hydrodenitrogenation catalyst, the hydrodesulfurization or hydrodenitrogenation catalyst comprising an amount of a composition, the composition comprising: a population of crystalline transition metal dichalcogenide platelets having the empirical formula MC2, wherein M is a transition metal and C is a chalcogenide, each of the platelets comprising a region of 2H phase and / or a region of 3R phase, and each of the platelets being characterized as comprising a single atomic layer to a few atomic layers.

Chalcogen silane precursors having electron withdrawing groups are described. Methods for depositing one or more of a silicon nitride (SixNy) film, a silicon oxide (SiOx) film, or a silicon oxynitride (SiOxNz) on a substrate are described. The substrate is exposed to the chalcogen silane precursor and a reactant to deposit the silicon nitride (SixNy) film, the silicon oxide (SiOx) film, and / or the silicon oxynitride (SiOxNz) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

A multilayer layered composite material piece (10), the multilayer layered composite material piece comprising: a conductive substrate (1); an electrically conductive buffer structure (2) consisting of one or more non-oxide films, the non-oxide films being made of a metal nitride; and a superconducting film (3) which is composed of Fe (Se, Te). Wherein Fe (Se, Te) is a compound comprising an Fe atom and at least a chalcogen anion, the chalcogen anion consisting of an Se atom and a Te atom in a variable ratio; wherein the conductive non-oxide film (2) is interposed between the conductive base material (1) and the superconducting film (3).

The invention relates to an exciton luminescence regulation and control method of a transition metal chalcogenide. The method comprises the following steps: S1, obtaining a two-dimensional layered transition metal chalcogenide; s2, putting the two-dimensional layered transition metal chalcogenide into a sample boat, putting the sample boat into a tubular furnace, putting the tubular furnace into a second temperature zone, and putting S powder, Se powder or Te powder into the first temperature zone of the tubular furnace; s3, annealing treatment is conducted on the two-dimensional layered transition metal chalcogenide, the temperature of the second temperature zone in the tubular furnace is controlled to range from 100 DEG C to 350 DEG C, hydrogen-containing gas is introduced into the tubular furnace, the hydrogen flow ranges from 1 sccm to 8 sccm, and the annealing time ranges from 10 min to 60 min; and S4, keeping the ventilation state, cooling the tubular furnace, and taking out the sample boat to obtain a target product. The method can be used for adjusting the vacancy of the chalcogenide element of the two-dimensional layered transition metal chalcogenide material to obtain the material with high exciton luminescence quality.

The application discloses an infrared transparent chalcogenide glass solution which is prepared by dissolving chalcogenide glass and an organic amine solvent, wherein the organic amine solvent is an amine salt solvent containing a bifunctional group, a micro-network structure of the chalcogenide glass is formed by covalent bonding of chalcogen elements, modifiers and selectively added dopants, the chalcogen elements are S, Se or Te, the modifiers are at least one of Ge, Sb, In, Sn and As, and the dopants are at least one of Cd, Ag, CsCl, Bi, Cs and Cu, the micro-network structure of the chalcogenide glass is rich in MN a The glass solution has high transmittance and high refractive index in a wide infrared spectrum, has high light control capability, can be used for preparing an infrared liquid anamorphic lens, and is used in a middle and far infrared anamorphic imaging system, so that the imaging system is more integrated, and a new way is provided for the development of an infrared imaging system in the direction of light weight, small size and high performance.

The semiconductor nanoparticle of the present invention is constituted of a compound containing Ag, Au, a chalcogen element essentially including Se, and a metal M, as essential constituent elements. The metal M is at least any one of Al, Ga, In, Tl, Zn, Cd, Hg, and Cu. The total content of Ag, Au, the chalcogen element essentially including Se, and the metal M in the compound constituting the semiconductor nanoparticle of the present invention is 95% by mass or more. The content of the metal M in the compound is preferably 1% by atom or more and 50% by atom or less. The semiconductor nanoparticle of the present invention can exhibit favorable light absorption and emission characteristics in a wavelength region including near infrared region and short-wave infrared region.

The invention discloses a transition metal sulfide single crystal with a macro-size asymmetric structure as well as a preparation method and application thereof. The preparation method comprises the following steps: providing a macro-size single-layer transition metal sulfide as a precursor; placing the substrate bearing the precursor in a reaction chamber in a non-horizontal orientation manner, so that a non-zero included angle is formed between the surface of the precursor and the dominant transmission direction of reactant flow in the reaction chamber; hydrogen plasma and a heterogeneous chalcogenide element source are introduced into the reaction chamber at the same time, an atomic layer replacement reaction is carried out under the room temperature condition, chalcogenide atoms on the top layer of the precursor are replaced by heterogeneous chalcogenide atoms, and after the replacement reaction is completely carried out, the transition metal sulfide single-layer material of the Janus structure is obtained. According to the method, the preparation of the high-quality Janus TMDC single crystal with the transverse size reaching the millimeter scale is realized, the prepared Janus single crystal has high spatial uniformity on the millimeter scale, and the process is simple, controllable and large-scale.

The invention discloses a preparation method of chalcogenide-doped perovskite nanocrystals. The preparation method specifically comprises the following steps: respectively preparing a cesium precursor solution and a chalcogenide precursor solution for later use; injecting a cesium precursor into the prepared lead bromide precursor to generate perovskite nanocrystals, then injecting a chalcogenide precursor solution for doping, blocking a reaction by using an ice-water bath, and then performing centrifugal purification to obtain chalcogenide-doped perovskite nanocrystals; optionally, a cadmium precursor solution can be added during doping to further modify the morphology. According to the method, through the synergistic effect of chalcogenide element (sulfur or selenium) doping and cadmium modification, the absorption wave band of the perovskite nanocrystal can be expanded to 900 nm to the maximum in the long wavelength direction, controllable modification of the nanocrystal morphology from a cube to a sphere-like polyhedron is achieved, and a novel material basis is provided for application of wide-spectrum photothermal conversion, infrared detection and the like.

The invention provides a preparation method of a heterogeneous transition metal chalcogenide material. The preparation method comprises a heating step, a plasma forming step and a deposition step. In the heating step, the chalcogenide solid is heated at a heating temperature to form a chalcogenide gas. In the plasma forming step, reaction gas is introduced to assist the chalcogenide gas in forming chalcogenide plasma. In the deposition step, a substrate is arranged adjacent to the chalcogenide plasma, the substrate comprises a base material and a plating layer, and the chalcogenide plasma and the plating layer are subjected to a deposition reaction at a reaction temperature and a reaction pressure to form the heterogeneous transition metal chalcogenide material with excellent optical characteristics and a surface-enhanced Raman scattering effect. Therefore, the heterogeneous transition metal chalcogenide material can be applied to a surface-enhanced Raman scattering sensor.

Disclosed are methods of forming PN junction structures, methods of fabricating semiconductor devices using the same, and semiconductor devices fabricated by the same. The method of forming a PN junction structure includes: forming on a substrate a first material layer that includes first transition metal atoms and first chalcogen atoms, loading the first material layer into a process chamber and supplying a gas of second chalcogen atoms, and forming a second material layer by substituting the second chalcogen atoms for the first chalcogen atoms on a selected portion of the first material layer. The first material layer has one of n-type conductivity and p-type conductivity. The second material layer has the other of the n-type conductivity and the p-type conductivity.

The invention discloses a preparation method and application of a transition metal V-VI main group multi-element phosphorus compound, and the method specifically comprises the following steps: S1, a double-cavity graphite boat is adopted as a reaction container, a transition metal precursor and phosphorus source mixture is loaded in a main reaction cavity, and a chalcogenide element precursor is loaded in an auxiliary deposition cavity; s2, instantaneous heating and cooling are achieved through a Joule thermal system, specifically, the temperature of the main reaction cavity is increased to 800-1000 DEG C within 0-10 seconds so that the metal precursor can be decomposed, and the temperature of the auxiliary deposition cavity is kept at 400-600 DEG C so that chalcogenide elements can be controlled to be reduced and gasified; s3, a graphite rotating valve between the main reaction cavity and the auxiliary deposition cavity is periodically opened, and P / Se / Te atomic-scale doping is achieved through the Knudsen diffusion effect; and S4, carrying out gradient cooling at a rate of 50-100 DEG C / s within 30-40 seconds, and inducing lattice stress to form a high-density dislocation defect. According to the invention, accurate control of multi-element doping can be realized, the reaction efficiency is greatly improved, and the product structure is improved.

The invention provides a preparation method of a wafer-level two-dimensional semiconductor heterojunction film from bottom to top. The method comprises the steps of substrate processing, wafer-level first transition metal disulfide compound film preparation and wafer-level two-dimensional heterojunction film preparation. The invention further provides an application of the wafer-level two-dimensional semiconductor heterojunction thin film. The wafer-level two-dimensional semiconductor heterojunction thin film is used for preparing gas-sensitive sensing, biochemical sensing, photoelectric detection or electronic devices. The growth environment of the wafer-level two-dimensional semiconductor heterojunction thin film is simple, no atmosphere is needed, and the requirement for the vacuum degree is not high. And uncontrollability of chemical reactions of different gas phase sources and harsh requirements on film preparation conditions and complex process operation due to different physical characteristics of transition metals and chalcogenide elements when separated elements are used as raw materials are avoided. The heterojunction thin film is constructed in the same vacuum environment in an in-situ deposition growth mode, introduction of a transfer step is avoided, a clean atomic-scale mutation interface of the heterojunction can be obtained, and the research on the Van der Waals interface characteristics of the two-dimensional heterojunction is facilitated.

A method of growing a transition metal dichalcogenide includes providing a substrate and positioning the substrate in a furnace. The method also includes reducing a transition metal compound to produce a plurality of reduced transition metal compounds. The plurality of reduced transition metal compounds is electrostatically aligned on the substrate. The method further includes reacting the plurality of reduced transition metal compounds with a chalcogen precursor to form one or more layers of a transition metal dichalcogenide.

Integrated circuit interconnect structures including an interconnect metallization feature comprising a sidewall reacted with a chalcogen into a low resistance liner. A portion of a backbone material or a metal seed layer may be advantageously converted into a metal chalcogenide, which can lower scattering resistance of an interconnect feature relative to alternative diffusion barrier materials, such a tantalum. Scattering resistance of such metal chalcogenide liner materials may be further reduced by actively cooling an IC, for example to cryogenic temperatures.

The invention relates to a method for preparing a multilayer semiconductor system, the method comprising the following steps: (a) depositing, on a monocrystalline substrate, a thin layer that comprises a material comprising at least one element from column IIIB and elements from column VB, referred to as IIIB-VB materials, which material is epitaxied; (b) depositing, on the thin layer comprising the IIIB-VB material, a metal source of a d-block transition metal, preferably under a chalcogen gas atmosphere, wherein the chalcogen is preferably not oxygen and is preferably sulphur; and wherein the metal source of the d-block transition metal preferably comprises more than 99.9% of the transition metal expressed as a percentage by weight relative to the total weight of the metal source.

The present invention belongs to the field of electrochemistry technology, and particularly relates to an electrode based on sub-nanometer tellurium@hierarchical porous carbon fiber and a preparation method thereof. The present invention provides an electrode of nitrogen and phosphorus co-doped porous carbon fiber loaded with sub-nanometer tellurium and a preparation method thereof, characterized in that: the space confinement effect of micron pores in the carbon fiber and the nitrogen and phosphorus co-doping enhance the tellurium immobilization and the adsorption of polytellurides, and inhibit the volume change and the shuttle effect of polytellurides during cycling. Compared with non-doping and single nitrogen doping, the space confinement effect of micron pores in the nitrogen and phosphorus co-doped carbon fiber ensures the formation of sub-nanometer tellurium, effectively improves the tellurium loading amount, slows down the volume expansion and the dissolution of polytellurides, and enables the electrode to exhibit high specific capacity and stable potassium storage performance. The present invention provides new ideas and new ways for the design and preparation of high-performance chalcogen element single substance-based electrodes and the regulation of their electrochemical properties.

The invention discloses an oxide material and a preparation method and application thereof. The preparation method of the oxide material comprises the following steps that a doping agent containing chalcogenide elements is adopted, the chalcogenide elements are doped in wide band gap oxide in an ion implantation mode, the oxide material is obtained, and the wide band gap oxide comprises at least one of aluminum oxide, gallium oxide, zinc oxide or titanium oxide. According to the method, the surface band gap of the oxide is regulated and controlled through ion implantation of chalcogenide elements, accurate control over the doping concentration and depth can be achieved, the optical and electrical characteristics of the oxide can be remarkably adjusted, and the application prospect is good.

A device is described. The device includes a substrate and a transition metal chalcogen film formed on the substrate by vapor deposition. The transition metal chalcogen film is continuous over an area of the substrate and is at least one monolayer thick. The area has a dimension of at least two inches. The vapor deposition may use a metal precursor, a chalcogen precursor, and at least one additive.

Disclosed are methods for forming layers comprising a group 14 element, a pnictogen, and a chalcogen. In some embodiments, the group 14 element comprises germanium, the pnictogen comprises antimony, and the chalcogen comprises tellurium. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises exposing a substrate to two different group 14 precursors, to two different pnictogen precursors, or to two different chalcogen precursors. Further discloses are related systems and methods. Suitable systems include atomic layer deposition systems. Suitable devices include phase change memory devices.

To provide a semiconductor nanoparticle excellent in light response characteristic, particularly light absorbing characteristic, and capable of being favorably used in a near infrared region and in a short wave infrared region.SOLUTION: The present invention is related to a semiconductor nanoparticle including a chalcogen compound, which contains Ag, Cu and a chalcogen element (Ch), and is represented by the following formula. The present invention indispensably contains Te as a chalcogen compound. The light response characteristic is shifted to a long wave length side by applying Te having a relatively large mass in chalcogen elements. The semiconductor nanoparticle pertaining to the present invention contains 90 atom% or more of an Ag Cu chalcogen compound, and has an absorption edge wavelength of a long wavelength side of an absorption spectrum of 1,200 nm or more. In the formula, Cu is a chalcogen element. x, y, z are atomic numbers of Ag, Cu, and a chalcogen element, and 0.2≤z / (x+y)≤1 is satisfied. Also, 1.0≤x / y≤10.0 holds for x and y.SELECTED DRAWING: Figure 2

The invention relates to an infrared photodetector and to a method for producing an infrared photodetector, said infrared photodetector (1) having a silicon element (3), the element having a chalcogen-doped region (9) with a chalcogen concentration of at most 5∙1019 cm-3 functioning as an infrared-sensitive detection volume.