33 results about "Interchalcogen" patented technology

Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeOx channel layer according to the present disclosure exhibits excellent output / transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on / off current ratio of ˜107.

A semiconductor nanoparticle, a method for producing the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle. The semiconductor nanoparticle includes a template crystal including a zinc chalcogenide and is cadmium-free. The template crystal includes zinc-chalcogen bilayers stacked in a [111] direction. In high-resolution scanning transmission electron microscopy analysis, the template crystal includes a first zone, a second zone, and a mirror zone disposed between the first zone and the second zone. The mirror zone includes at least one mirror plane where a reversal occurs in the atomic arrangement direction of zinc and chalcogen elements between adjacent zinc-chalcogen bilayers. In the zinc-chalcogen bilayers of the first zone, zinc atoms and chalcogen element atoms are arranged in a first direction. In the zinc-chalcogen bilayers of the second zone, zinc atoms and chalcogen element atoms are arranged in a second direction.

This invention provides a method for preparing two-dimensional TMDs alloys using non-metallic chalcogenides. It is a modified CVD method in which a non-metallic chalcogenide containing two chalcogen elements replaces the elemental chalcogenides as the non-metallic growth source. The ratio of the two chalcogen elements in the TMDs alloy can be changed by adjusting the weight ratio of the non-metallic growth source to the metallic growth source. Adding 40 mg of WO3 and 55, 38, 26, and 15 mg of SeS2 respectively yielded WS... 0.96 Se 0.04 WS 0.65 Se 0.35 WS 0.5 Se 0.5 WS 0.27 Se 0.73 Four types of TMD alloy single crystals can be fabricated. Large-size single crystals and large-area thin films of two-dimensional TMD alloys with tunable chemical composition and uniform layer number can be prepared. This provides more options for optoelectronic devices with specific spectral responses, field-effect transistors, and flexible electronic devices.

A method for adjusting the wide spectrum detection of transition metal chalcogenides by using vacancy defects belongs to the field of two-dimensional materials. In the method, transition metal oxides are used as metal sources, two different chalcogen elements are used as sulfur sources, and a single-layer ternary transition metal chalcogen compound with uniform element distribution is grown by using a chemical vapor deposition method. By using the difference in the stability of the chemical bonds between alloy elements, the unstable chemical bonds are broken by hydrogen-assisted annealing, and the generated chalcogen element vacancy defects are uniformly distributed in the ternary transition metal chalcogen compound. The chalcogen element vacancy defects introduce defect energy levels between the conduction band and the valence band of the transition metal chalcogen compound, generate new photoluminescence peaks, and widen the spectrum detection range. The experimental method is simple in process, good in repeatability, can accurately control the type, distribution and number of defects, and is suitable for large-scale production.

The disclosure relates to a method of producing an intrinsic or doped transition metal dichalcogenide film comprising: providing a substrate in a deposition chamber; providing a reducing environment and an excess of chalcogen in the deposition chamber; and forming the intrinsic or doped transition metal dichalcogenide film on a surface of the substrate. The transition metal may be Mo or W, and the chalcogen may be S, Se, or Te. The reducing environment may be a hydrogen rich environment.

A vapor deposition system is described. The vapor deposition system includes a reaction chamber and a reactant delivery subsystem coupled with the reaction chamber. The reaction chamber is configured to retain a substrate therein. The reactant delivery subsystem includes inlets, a pre-reaction region, and outlets. The inlets receive precursors and chalcogen precursor(s). The pre-reaction region is configured to receive the precursors from a portion of the inlets and to react at least a portion of the precursors to form modified precursor(s). The modified precursor(s) are more thermally stable than metal-containing precursor(s) of the precursors used to form the modified precursor(s). The outlets are coupled with the reaction chamber and the pre-reaction region. The outlets separately provide the modified precursor(s) and the chalcogen precursor(s) to the reaction chamber. The modified precursor(s) and the chalcogen precursor(s) react and form a chalcogen film on the substrate in the reaction chamber.

A hydrodesulfurization or hydrodenitrogenation catalyst, the hydrodesulfurization or hydrodenitrogenation catalyst comprising an amount of a composition, the composition comprising: a population of crystalline transition metal dichalcogenide platelets having the empirical formula MC2, wherein M is a transition metal and C is a chalcogenide, each of the platelets comprising a region of 2H phase and / or a region of 3R phase, and each of the platelets being characterized as comprising a single atomic layer to a few atomic layers.

A multilayer layered composite material piece (10), the multilayer layered composite material piece comprising: a conductive substrate (1); an electrically conductive buffer structure (2) consisting of one or more non-oxide films, the non-oxide films being made of a metal nitride; and a superconducting film (3) which is composed of Fe (Se, Te). Wherein Fe (Se, Te) is a compound comprising an Fe atom and at least a chalcogen anion, the chalcogen anion consisting of an Se atom and a Te atom in a variable ratio; wherein the conductive non-oxide film (2) is interposed between the conductive base material (1) and the superconducting film (3).

The application discloses an infrared transparent chalcogenide glass solution which is prepared by dissolving chalcogenide glass and an organic amine solvent, wherein the organic amine solvent is an amine salt solvent containing a bifunctional group, a micro-network structure of the chalcogenide glass is formed by covalent bonding of chalcogen elements, modifiers and selectively added dopants, the chalcogen elements are S, Se or Te, the modifiers are at least one of Ge, Sb, In, Sn and As, and the dopants are at least one of Cd, Ag, CsCl, Bi, Cs and Cu, the micro-network structure of the chalcogenide glass is rich in MN a The glass solution has high transmittance and high refractive index in a wide infrared spectrum, has high light control capability, can be used for preparing an infrared liquid anamorphic lens, and is used in a middle and far infrared anamorphic imaging system, so that the imaging system is more integrated, and a new way is provided for the development of an infrared imaging system in the direction of light weight, small size and high performance.

The semiconductor nanoparticle of the present invention is constituted of a compound containing Ag, Au, a chalcogen element essentially including Se, and a metal M, as essential constituent elements. The metal M is at least any one of Al, Ga, In, Tl, Zn, Cd, Hg, and Cu. The total content of Ag, Au, the chalcogen element essentially including Se, and the metal M in the compound constituting the semiconductor nanoparticle of the present invention is 95% by mass or more. The content of the metal M in the compound is preferably 1% by atom or more and 50% by atom or less. The semiconductor nanoparticle of the present invention can exhibit favorable light absorption and emission characteristics in a wavelength region including near infrared region and short-wave infrared region.

The invention discloses a transition metal sulfide single crystal with a macro-size asymmetric structure as well as a preparation method and application thereof. The preparation method comprises the following steps: providing a macro-size single-layer transition metal sulfide as a precursor; placing the substrate bearing the precursor in a reaction chamber in a non-horizontal orientation manner, so that a non-zero included angle is formed between the surface of the precursor and the dominant transmission direction of reactant flow in the reaction chamber; hydrogen plasma and a heterogeneous chalcogenide element source are introduced into the reaction chamber at the same time, an atomic layer replacement reaction is carried out under the room temperature condition, chalcogenide atoms on the top layer of the precursor are replaced by heterogeneous chalcogenide atoms, and after the replacement reaction is completely carried out, the transition metal sulfide single-layer material of the Janus structure is obtained. According to the method, the preparation of the high-quality Janus TMDC single crystal with the transverse size reaching the millimeter scale is realized, the prepared Janus single crystal has high spatial uniformity on the millimeter scale, and the process is simple, controllable and large-scale.

The invention provides a preparation method of a heterogeneous transition metal chalcogenide material. The preparation method comprises a heating step, a plasma forming step and a deposition step. In the heating step, the chalcogenide solid is heated at a heating temperature to form a chalcogenide gas. In the plasma forming step, reaction gas is introduced to assist the chalcogenide gas in forming chalcogenide plasma. In the deposition step, a substrate is arranged adjacent to the chalcogenide plasma, the substrate comprises a base material and a plating layer, and the chalcogenide plasma and the plating layer are subjected to a deposition reaction at a reaction temperature and a reaction pressure to form the heterogeneous transition metal chalcogenide material with excellent optical characteristics and a surface-enhanced Raman scattering effect. Therefore, the heterogeneous transition metal chalcogenide material can be applied to a surface-enhanced Raman scattering sensor.

Disclosed are methods of forming PN junction structures, methods of fabricating semiconductor devices using the same, and semiconductor devices fabricated by the same. The method of forming a PN junction structure includes: forming on a substrate a first material layer that includes first transition metal atoms and first chalcogen atoms, loading the first material layer into a process chamber and supplying a gas of second chalcogen atoms, and forming a second material layer by substituting the second chalcogen atoms for the first chalcogen atoms on a selected portion of the first material layer. The first material layer has one of n-type conductivity and p-type conductivity. The second material layer has the other of the n-type conductivity and the p-type conductivity.

The invention provides a preparation method of a wafer-level two-dimensional semiconductor heterojunction film from bottom to top. The method comprises the steps of substrate processing, wafer-level first transition metal disulfide compound film preparation and wafer-level two-dimensional heterojunction film preparation. The invention further provides an application of the wafer-level two-dimensional semiconductor heterojunction thin film. The wafer-level two-dimensional semiconductor heterojunction thin film is used for preparing gas-sensitive sensing, biochemical sensing, photoelectric detection or electronic devices. The growth environment of the wafer-level two-dimensional semiconductor heterojunction thin film is simple, no atmosphere is needed, and the requirement for the vacuum degree is not high. And uncontrollability of chemical reactions of different gas phase sources and harsh requirements on film preparation conditions and complex process operation due to different physical characteristics of transition metals and chalcogenide elements when separated elements are used as raw materials are avoided. The heterojunction thin film is constructed in the same vacuum environment in an in-situ deposition growth mode, introduction of a transfer step is avoided, a clean atomic-scale mutation interface of the heterojunction can be obtained, and the research on the Van der Waals interface characteristics of the two-dimensional heterojunction is facilitated.

A method of growing a transition metal dichalcogenide includes providing a substrate and positioning the substrate in a furnace. The method also includes reducing a transition metal compound to produce a plurality of reduced transition metal compounds. The plurality of reduced transition metal compounds is electrostatically aligned on the substrate. The method further includes reacting the plurality of reduced transition metal compounds with a chalcogen precursor to form one or more layers of a transition metal dichalcogenide.

Integrated circuit interconnect structures including an interconnect metallization feature comprising a sidewall reacted with a chalcogen into a low resistance liner. A portion of a backbone material or a metal seed layer may be advantageously converted into a metal chalcogenide, which can lower scattering resistance of an interconnect feature relative to alternative diffusion barrier materials, such a tantalum. Scattering resistance of such metal chalcogenide liner materials may be further reduced by actively cooling an IC, for example to cryogenic temperatures.

The invention relates to a method for preparing a multilayer semiconductor system, the method comprising the following steps: (a) depositing, on a monocrystalline substrate, a thin layer that comprises a material comprising at least one element from column IIIB and elements from column VB, referred to as IIIB-VB materials, which material is epitaxied; (b) depositing, on the thin layer comprising the IIIB-VB material, a metal source of a d-block transition metal, preferably under a chalcogen gas atmosphere, wherein the chalcogen is preferably not oxygen and is preferably sulphur; and wherein the metal source of the d-block transition metal preferably comprises more than 99.9% of the transition metal expressed as a percentage by weight relative to the total weight of the metal source.

A device is described. The device includes a substrate and a transition metal chalcogen film formed on the substrate by vapor deposition. The transition metal chalcogen film is continuous over an area of the substrate and is at least one monolayer thick. The area has a dimension of at least two inches. The vapor deposition may use a metal precursor, a chalcogen precursor, and at least one additive.

Disclosed are methods for forming layers comprising a group 14 element, a pnictogen, and a chalcogen. In some embodiments, the group 14 element comprises germanium, the pnictogen comprises antimony, and the chalcogen comprises tellurium. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises exposing a substrate to two different group 14 precursors, to two different pnictogen precursors, or to two different chalcogen precursors. Further discloses are related systems and methods. Suitable systems include atomic layer deposition systems. Suitable devices include phase change memory devices.

The invention relates to an infrared photodetector and to a method for producing an infrared photodetector, said infrared photodetector (1) having a silicon element (3), the element having a chalcogen-doped region (9) with a chalcogen concentration of at most 5∙1019 cm-3 functioning as an infrared-sensitive detection volume.

This application is filed in accordance with the 2 O 2 S 2 The present invention relates to electroactive materials suitable for electrochemical cell electrodes, comprising chalcogen oligomers capable of reversibly deintercalating / reintercalating anions of chalcogen, such as, and electrochemical electrodes and cells containing said materials.

The surfaces of epitaxial source and drain regions of NMOS (n-type metal-oxide-semiconductor) transistors are heavily doped with an n-type chalcogen (e.g., tellurium, selenium, sulfur) to overcome the limitations of low-ionization-energy n-type dopants (e.g., phosphorus, arsenic, antimony) on free electron concentrations due to Fermi-level pinning. The chalcogen can be introduced into the source and drain regions by diffusion from a chalcogen-rich metal contact layer or by chemical vapor deposition (CVD) processes in which a chalcogen precursor flows over the source and drain regions after its formation. In some embodiments, the CVD process may involve silicon and chalcogen precursors flowing over the surface of the source and drain regions to form a thin layer of silicon heavily doped with a chalcogen.

Mixed anion rhenium chalcohalides, films of the mixed anion chalcohalides, and light-emitting diodes incorporating the mixed anion rhenium chalcohalides as active materials are provided. The mixed anion rhenium chalcohalides have the formula A6Re6Q8X8, where A is an alkali metal atom, Q is a chalcogen element, and X is halogen atom. The mixed anion rhenium chalcohalides are characterized by [Re6Q8X6]4− clusters, A+ cations, and X− anions.

The invention discloses a compound thin film heterojunction and a preparation method and application thereof, and belongs to the technical field of semiconductor manufacturing and nano materials. The preparation method comprises the steps that a substrate with an AxBy thin film is provided, A is a metal element, B is a chalcogenide element, ion irradiation is conducted on the AxBy thin film through an ion beam, the specific element B is selectively and preferentially removed through the intrinsic sputtering yield difference of the ion beam on different elements in the thin film, and therefore the controllable component gradient is actively constructed in the depth direction of the thin film; when local components reach a phase change critical point, in-situ induction phase change is carried out in the thin film, and a vertical heterojunction with an atomic-scale diffusion interface is formed. The method is completed in one step, the process is simple, the position of the heterojunction can be accurately regulated and controlled through irradiation parameters, and the obtained heterojunction can be used for preparing semiconductor devices such as high-speed transistors, laser diodes, photoelectric detectors and solar cells.

The surfaces of NMOS (n-type metal-oxide-semiconductor) transistor epitaxial source and drain regions are heavily doped with an n-type chalcogen (e.g., tellurium, selenium, sulfur) to overcome the limitations of low-ionization energy n-type dopants (e.g., phosphorous, arsenic, antimony) to free-electron concentrations due to Fermi-level pinning. The chalcogen can be introduced to the source or drain region surfaces by diffusion from a chalcogen-rich metal contact layer or by chemical vapor deposition processes in which a chalcogen precursor flows over the source and drain regions after they are formed. In some embodiments, the chemical vapor deposition process can comprise silicon and chalcogen precursors flowing over the source and drain region surfaces to form a thin layer of silicon highly doped with a chalcogen.

The invention relates to an infrared photodetector and a method for manufacturing an infrared photodetector, wherein the infrared photodetector comprises a silicon element with a chalcogen-doped region having a chalcogen concentration of at most 5·10 19 cm -3 exhibits an infrared-sensitive detection volume.

The invention discloses a two-dimensional MXY material prediction method and system based on machine learning screening, and belongs to the cross technical field of material informatics and computational material science. Firstly, a plurality of irreducible structures composed of M, X and Y are generated based on a supercell model, M represents a metal element, and X and Y represent different chalcogenide elements; secondly, constructing a configuration energy prediction model, predicting energy of the irreducible structures, and screening based on a prediction result to obtain the irreducible structure with the lowest energy; and finally, classifying the irreducible structure into a Janus structure or an anti-Janus structure according to atom arrangement in the irreducible structure with the lowest energy. The found and defined anti-Janus structure is stable, and the skyrmion has a higher critical magnetic field, which means that a device formed by the anti-Janus structure has a wider working range and better environmental adaptability, and a material foundation is laid for developing a high-performance and high-robustness spin electronic device.

The present application relates to a semiconductor nanoparticle containing an AgCu chalcogenide represented by the following formula composed of Ag, Cu, and a chalcogen element (Ch). In the present application, it is necessary to contain Te as the chalcogen element. By applying Te, which is larger in mass among chalcogen elements, the photoresponsivity shifts to the long wavelength side. The semiconductor nanoparticle according to the present application contains 90 atomic% or more of the AgCu chalcogenide, and the absorption edge wavelength on the long wavelength side of the absorption spectrum becomes 1200 nm or more. In the formula, Ch is a chalcogen element. x, y, z are the atomic numbers of Ag, Cu, and the chalcogen element, and 0.2 ≤ z / (x+y) ≤ 1. In addition, 1.0 ≤ x / y ≤ 10.0.

In one aspect, a method of depositing a transition metal dichalcogenide is provided. The method includes depositing a layer of the transition metal dichalcogenide on a substrate by a metalorganic chemical vapor deposition process including exposing the substrate to a mixture of reactant gases including a transition metal precursor and a chalcogen precursor. The mixture further includes a gas-phase halogen-based reactant to volatilize transition metal adatoms deposited on the substrate.

Disclosed is a selective device having high selectivity and temperature stability. The selective device has a doped insulating layer. The doped insulating layer has a metal oxide and a chalcogen element introduced into the metal oxide. Metal oxide has amorphous structure with minimized defects, and the introduced chalcogen elements form a conductive channel at a specific voltage and realize bi-directional switching characteristics.