37 results about "Interchalcogen" patented technology

The invention provides a transition metal chalcogenide film and a preparation method and application thereof. Platinum group metal is adopted as the transition metal and comprises any one of ruthenium, rhodium, palladium, osmium and iridium or platinum, and chalcogen in a transition metal chalcogenide comprises any one of sulfur and selenium or tellurium. The method comprises the steps of separately heating a platinum group metal source and a chalcogen source in a protective gas atmosphere, carrying out a chemical vapor deposition reaction, and forming the transition metal chalcogenide film ona substrate. According to the method, a platinum group metal source is used as a raw material, a chemical vapor deposition method is adopted, continuous and controllable formation of the two-dimensional platinum group metal chalcogenide film in a large area is achieved, the surface of the obtained film material is flat, and the film material has excellent electrical and optical properties and hasa broad application prospect in the field of nano electronic devices.

The invention discloses a transition metal sulfur-group compound thin-layer material as well as a preparation method thereof and application thereof. The preparation method comprises the following steps: uniformly spreading a transition metal source between two linings to prepare a sandwich structure; performing thermal treatment on the sandwich structure, fusing and bonding two substrates together, performing chemical vapor deposition reaction on a sulfur-group element source and the fused bonded sandwich structure under protection of protective gas, heating the transition metal source to dissolve and diffuse at a reaction temperature, separating out the transition metal source on the surfaces of the substrates, and enabling the transition metal source to react with the sulfur-group element source, wherein the sulfur-group element source comprises one or more of a sulfur source, a selenium source and a tellurium source. In this way, a dissolving-separating out principle is combined with the chemical vapor deposition reaction to prepare the transition metal sulfur-group compound thin-layer material, and a preparation process of the transition metal sulfur-group compound thin-layer material is simple and easy, and is controllable in process; and the obtained transition metal sulfur-group compound thin-layer material is uniformly distributed in a centimeter-level range, is good in morphology, is excellent in performances such as optical performances and electrical performances, and has a wide application prospect.

The invention provides a magnetic topological insulator heterojunction single-crystal material and a synthesis method thereof. The synthesis method comprises the following steps: grinding metal and chalcogen, then charging a quartz tube with the ground metal and chalcogen, and carrying vacuum tube sealing; heating the sealed quartz tube, maintain the sealed quartz tube at a certain temperature, and carrying out cooling treatment; subjecting the cooled quartz tube to cooling treatment again; and carrying out ice-bath quenching on the quartz tube which is cooled again so as to obtain the magnetic topological insulator heterojunction single-crystal material. The preparation method is simple to operate, does not involve any transfer method, uses no expensive special production equipment, has high production efficiency, and can be used for quickly preparing the single-crystal material with a natural magnetic topological insulator heterojunction.

The invention relates to a chalcogenide film comprising a noble metal chalcogenide material having a formula MCx. M may represent a noble metal, C may represent a chalcogen, x may be any one positivevalue equal to or more than 1.4 and less than 2. The chalcogenide film may be configured to generate electrons and holes upon light incident on the chalcogenide film. A method of producing a chalcogenide fil m with increased vacancy or defect is provided, wherein increasing vacancies or defects may lead to decrease in bandgap and enhance absorption at wavelength range such as mid-infrared. The chalcogenide film is used in a device including photodetector or a solar cell.

The invention discloses a doped transition metal chalcogenide film and a preparation method and application thereof. The preparation method comprises the following steps of providing a substrate, wherein a transition metal source is arranged in the substrate, and a heterogeneous metal source is arranged on the surface of the substrate; and enabling the chalcogens source to be in contact with the substrate, carrying out heating in a protective atmosphere, and carrying out a chemical vapor deposition reaction to obtain the doped transition metal chalcogenide film. In the heating treatment process, the transition metal source is continuously diffused from the substrate and separated out from the surface of the substrate. The separated transition metal source and the chalcogens source are subjected to the chemical vapor deposition reaction in the protective atmosphere, the heterogeneous metal source is embedded into a crystal lattice in the growth process of a transition metal chalcogenide, and a doped sample is obtained. According to the doped transition metal chalcogenide film and the preparation method and application thereof, the regulation and control capacity for the concentration of doped metal elements is improved through a double-face reaction source supply strategy adopted by the method, and the universality problem during doping of various metal elements in a single-face source mode is solved.

The invention discloses a gallium-containing orthogonal inorganic compound crystal. The compound has the following chemical formula: AGa5Q8. Q is selected from one of chalcogenide elements. The gallium-containing inorganic compound belongs to an orthorhombic crystal system and an Iba21 space group. The invention further discloses a method for preparing the gallium-containing orthogonal inorganic compound crystal. The invention further discloses application of the material as a nonlinear optical crystal. The gallium-containing inorganic compound provided by the invention has the excellent characteristics of high laser damage threshold, high frequency multiplication signal intensity and the like. The method for preparing the gallium-containing inorganic compound provided by the invention has the advantages of high yield and simple synthesis process.

The invention discloses a gallium-containing monoclinic inorganic compound crystal. The compound has the following chemical formula: AGa5Q8. Wherein A is selected from one of alkali metal elements; q is selected from one of chalcogenide elements; the gallium-containing monoclinic inorganic compound crystal belongs to a monoclinic system and a P21 space group. The invention further discloses a method for preparing the gallium-containing monoclinic inorganic compound crystal. The invention further discloses application of the material as a nonlinear optical crystal. The gallium-containing monoclinic inorganic compound crystal provided by the invention has the excellent characteristics of high laser damage threshold, high frequency multiplication signal intensity and the like. The method for preparing the gallium-containing monoclinic inorganic compound crystal provided by the invention has the advantages of high yield and simple synthesis process.

The invention relates to a preparation method of a transition metal chalcogenide crystal, wherein the chemical formula of the transition metal chalcogenide can be expressed as MX2, and wherein M is a central transition metal element, and X is a chalcogen element. The preparation method comprises the following steps: preparing polycrystalline MX2 powder and an MX2 seed crystal; placing a transport medium and the polycrystalline MX2 powder in a first reaction chamber, and placing the MX2 seed crystal in a second reaction chamber, wherein one end of the first reaction cavity is provided with an opening, the second reaction cavity is vacuum-sealed and has a temperature gradient, the first reaction cavity is arranged in a high-temperature area in the second reaction cavity, and the MX2 seed crystal is arranged in a low-temperature area in the second reaction cavity.

A gold-coated silver bonding wire includes: a core material containing silver as a main component; and a coating layer provided on a surface of the core material and containing gold as a main component. The gold-coated silver bonding wire contains gold in a range of not less than 2 mass % nor more than 7 mass %, and at least one sulfur group element selected from the group consisting of sulfur, selenium, and tellurium in a range of not less than 1 mass ppm nor more than 80 mass ppm, with respect to a total content of the bonding wire.

The invention relates to a preparation method of a chalcogenide tubular material, and belongs to the technical field of photoelectric material preparation. A solid chalcogenide raw material is placed in a low-temperature heating zone of a double-temperature-zone furnace reactor, a metal raw material is placed in a high-temperature vulcanization reaction zone of the double-temperature-zone furnace reactor, inert gas is adopted for gas washing, then the solid chalcogenide raw material in the low-temperature heating zone and the metal raw material in the high-temperature vulcanization reaction zone are heated, the solid chalcogenide raw material in the low-temperature heating zone releases gaseous chalcogenide to react with the metal raw material in the high-temperature vulcanization reaction zone to generate a gas-phase chalcogenide, and the gas-phase chalcogenide is condensed on the substrate to obtain the chalcogenide tubular material. The chalcogenide tubular material is simple in preparation process, large-scale production can be achieved, the specific surface area of the chalcogenide tubular material is large, photons can be better captured, the transmission rate of photon-generated carriers is increased, and the chalcogenide tubular material is suitable for being applied to the field of photoelectric semiconductors.